摘要:
Provided is a signal transfer circuit which uses a low cost circuit board with a high packing density but is capable of reducing a crosstalk noise between signal lines and also reducing a reflection noise due to a stub. A signal transfer circuit of the present invention is configured such that lead terminals of electronic components and through-hole vias are connected to each other by surface wirings, respectively, to allow no branching from the middle of the through-hole vias. Further, first wirings connecting a first electronic component are each arranged between a corresponding pair of second wirings connecting a second electronic component, and signals are transmitted through the first wirings and the second wirings by interleaved transmission.
摘要:
This is a method for regenerating the NOx catalyst in a NOx purifying system provided in the exhaust passage with a direct reduction type NOx catalyst which directly decomposes the NOx during lean-condition operation and is regenerated at rich-condition operation, and the method prohibiting the rich-condition control when the temperature detected by a catalyst temperature detecting means is within the predetermined temperature range.Thus, when the exhaust gas are temporarily made rich-condition for catalyst regeneration which means recovering the NOx purifying ability of the direct reduction type NOx catalyst arranged in the exhaust passage of the engine, the NOx is prohibited from being discharged into the atmospheric air, and also the purifying ability can surely be recovered.
摘要:
An optical wavelength-converting device for generating the second-harmonic wave through Cerenkov radiation has a substrate made from nonlinear optical crystal which acts as a cladding layer. Formed on the top surface of the substrate is a long, narrow optical waveguide layer, whose refractive index is larger than that of the substrate. In the substrate, multi-layered domain-inverted sections are formed. With this arrangement, the nonlinear coefficient is locally changed, thereby compensating for phase mismatching between the fundamental wave and the second-harmonic wave in the direction perpendicular to the substrate's surface. This compensation helps improve the efficiency in converting the laser input light of the fundamental wave into the second-harmonic wave.
摘要:
A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.
摘要:
A semiconductor package includes a semiconductor device including a plurality of signal pads and a plurality of auxiliary pads which are alternatively arranged in a predetermined direction, and a package board including a plurality of signal bond fingers, a plurality of first power supply voltage bond fingers, and a plurality of second power supply voltage bond fingers. The signal pads are connected respectively to the signal bond fingers by first wires. The first power supply voltage bond fingers and the second power supply voltage bond fingers are connected respectively to the auxiliary pads by second wires. The first wires are disposed between those of the second wires which are connected to the first power supply voltage bond fingers and those of the second wires which are connected to the second power supply voltage bond fingers.
摘要:
To provide an exhaust gas purifying system and a control method therefor, capable of burning and removing PM collected at the downstream side of a DPF by utilizing HC and CO generated when performing the operation for recovering the NOx direct reduction type catalyst from a catalyst deterioration due to poisoning with sulfur. The exhaust gas purifying system (10) having a NOx direct reduction type catalyst (3) for purging NOx in an exhaust gas and a DPF (4) with a catalyst for purging PM in the exhaust gas are sequentially arranged in an exhaust gas passage (2) in that order in the direction of from an upstream side to a downstream side, which further comprises an air supply system (5) for supplying air (Aa) between the NOx direct reduction type catalyst (3) and the DPF (4) with a catalyst during a operation for recovering the NOx direct reduction type catalyst (3) from a catalyst deterioration due to poisoning with sulfur by bringing the oxygen concentration in the exhaust gas to be substantially zero and raising the exhaust gas temperature.
摘要:
Adequate controllability is ensured when feedback control is provided to both the EGR valve and the intake throttle valve, and switching shock is prevented when control is switched from one to the other. The present apparatus comprises an EGR valve, an intake throttle valve, feedback control means for providing feedback control to the EGR valve and intake throttle valve such that the actual EGR volume approximates the target EGR volume corresponding to the running condition of the engine, and limiting means for limiting the operable opening ranges of the EGR valve and intake throttle valve in accordance with the target EGR volume. During EGR control of one valve, feedback control is provided to the other valve and the target opening is constantly calculated. The actual operations are merely limited, so these operations can start from the optimal opening and the switching shock can be prevented when a switch is made to the control of the other valve.
摘要:
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2
摘要:
A data transmission system is provided in which it is possible to perform both of suppressing the degrading of the slew rate and suppressing the ringing even if load capacitance of an input buffer is changed.The data transmission system transmitting data from an output buffer to the input buffer through a trace is provided with first RC parallel circuits connected in series to the trace on a first Printed Circuit Board (PCB) on which the output buffer is mounted, and second RC parallel circuits connected in series to the trace on a second Printed Circuit Board (PCB) on which the input buffer is mounted, and which can be connected and separated to and from the first Printed Circuit Board (PCB).
摘要:
A semiconductor package includes a semiconductor device including a plurality of signal pads and a plurality of auxiliary pads which are alternatively arranged in a predetermined direction, and a package board including a plurality of signal bond fingers, a plurality of first power supply voltage bond fingers, and a plurality of second power supply voltage bond fingers. The signal pads are connected respectively to the signal bond fingers by first wires. The first power supply voltage bond fingers and the second power supply voltage bond fingers are connected respectively to the auxiliary pads by second wires. The first wires are disposed between those of the second wires which are connected to the first power supply voltage bond fingers and those of the second wires which are connected to the second power supply voltage bond fingers.