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公开(公告)号：US20170175249A1
公开(公告)日：2017-06-22
申请号：US15122064
申请日：2016-05-13
发明人： Jung Heum Yun , Gun Hwan Lee , Myung Kwan Song , Sung Hun Lee , Guo Qing Zhao
CPC分类号： C23C14/18 , C23C14/0036 , C23C14/024 , C23C14/185 , C23C14/20 , C23C14/24 , C23C14/3457 , C30B23/00 , C30B29/02 , C30B29/52
摘要： The present disclosure related to a thin metal film substrate and a method for preparing the same and more particularly, to a thin metal film substrate including a substrate; and a thin metal film comprising Ag or an Ag alloy formed on the substrate, wherein the thin metal film is formed to have preferred orientation corresponding to the preferred orientation of the substrate during the initial growth. The thin metal film substrate according to an example grows in a 2D continuous thin film from the initial growth to provide excellent light transmittance and conductivity.
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32.发明申请公开(公告)号：US20170175246A1
公开(公告)日：2017-06-22
申请号：US15357476
申请日：2016-11-21
CPC分类号： C23C14/0036 , C23C14/205 , C23C14/325 , C23C14/35 , C23C16/401 , C23C16/405 , C23C16/50 , C23C16/545 , C23C16/56 , H01L21/02422 , H01L21/02532 , H01L21/02631
摘要： Methods are provided for production of a composite layer comprising a plastic foil and a layer deposited directly thereon. A method for production of a composite layer comprising a plastic foil and at least one layer deposited directly onto the plastic foil by means of chemical gas-phase deposition within a vacuum chamber may be provided, wherein the plastic foil has a proportion of at least 20 percent by mass of a metal element or of a semiconductor element, wherein during the layer deposition, at least one monomer is supplied into the vacuum chamber and a plasma is formed within the vacuum chamber. After completed deposition of the layer, at least one surface region of the layer is exposed to accelerated electrons.
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公开(公告)号：US09684097B2
公开(公告)日：2017-06-20
申请号：US14481221
申请日：2014-09-09
申请人： CORNING INCORPORATED
IPC分类号： C03C17/34 , G02B1/10 , C23C14/06 , C23C14/08 , C23C14/10 , G02B5/22 , G02B5/26 , C03C21/00 , C03C3/091 , C23C14/00
CPC分类号： G02B1/14 , C03C3/091 , C03C17/3435 , C03C21/002 , C03C2217/78 , C03C2217/91 , C23C14/0036 , C23C14/0084 , C23C14/0641 , C23C14/0676 , C23C14/081 , C23C14/10 , G02B1/105 , G02B5/22 , G02B5/26 , Y10T428/2495 , Y10T428/26
摘要： One or more aspects of the disclosure pertain to an article including an optical film structure disposed on a substrate, which may include a strengthened or non-strengthened substrate that may be amorphous or crystalline, such that the article exhibits scratch resistance and retains the same or improved optical properties as the substrate, without the optical film structure disposed thereon. In one or more embodiments, the article exhibits an average transmittance of 85% or more, over the visible spectrum (e.g., 380 nm-780 nm). Embodiments of the optical film structure include aluminum-containing oxides, aluminum-containing oxy-nitrides, aluminum-containing nitrides (e.g., AlN) and combinations thereof. The optical film structures disclosed herein also include a transparent dielectric including oxides such as silicon oxide, germanium oxide, aluminum oxide and a combination thereof. Methods of forming such articles are also provided.
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公开(公告)号：US09666324B2
公开(公告)日：2017-05-30
申请号：US14461639
申请日：2014-08-18
发明人： Hyeon Cheol Park , Kwang Hee Kim , Chan Kwak , Yoon Chul Son , Sang Mock Lee
IPC分类号： C23C14/34 , H01B1/02 , H01B1/06 , C23C14/00 , H01L31/18 , C23C14/06 , H01B1/16 , H01L33/42 , H01L51/52
CPC分类号： H01B1/02 , C23C14/0036 , C23C14/0641 , C23C14/3414 , C23C14/3464 , H01B1/06 , H01B1/16 , H01L31/1892 , H01L33/42 , H01L51/5234 , Y10T428/26
摘要： A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.
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公开(公告)号：US20170130319A1
公开(公告)日：2017-05-11
申请号：US15413198
申请日：2017-01-23
CPC分类号： H01L21/67023 , B65D43/02 , C23C4/01 , C23C4/04 , C23C4/10 , C23C4/11 , C23C4/12 , C23C4/134 , C23C4/14 , C23C4/16 , C23C14/0015 , C23C14/0021 , C23C14/0031 , C23C14/0036 , C23C14/0052 , C23C14/0084 , C23C14/0094 , C23C14/08 , C23C14/081 , C23C14/083 , C23C14/088 , H01J37/32477 , H01J37/32495 , H01J37/32513 , H01J2237/334 , H01L21/67063 , H01L21/67069 , H01L21/6708 , H01L21/67086 , Y10T428/131 , Y10T428/1317 , Y10T428/139 , Y10T428/1393
摘要： A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.
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36.发明申请公开(公告)号：US20170111023A1
公开(公告)日：2017-04-20
申请号：US15293108
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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37.发明申请公开(公告)号：US20170111022A1
公开(公告)日：2017-04-20
申请号：US15293091
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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公开(公告)号：US20170110300A1
公开(公告)日：2017-04-20
申请号：US15293063
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
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公开(公告)号：US20170081754A1
公开(公告)日：2017-03-23
申请号：US15126265
申请日：2015-02-03
申请人： KANEKA CORPORATION
CPC分类号： C23C14/086 , C23C14/0036 , C23C14/34 , C23C14/562 , G06F3/041 , G06F3/044 , G06F2203/04103 , H01B1/08
摘要： A transparent electroconductive film includes transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy ESn of tin 3d5/2 and a bond energy EIn of indium 3d5/2 as determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies ESn and EIn is present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference ESn-EIn; and a difference Emax-Emin between the maximum value Emax and the minimum value Emin of the bond energy difference is 0.1 eV or more.
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公开(公告)号：US20170067148A1
公开(公告)日：2017-03-09
申请号：US15247403
申请日：2016-08-25
发明人： Vincent Fischer , Benjamin Graffel , Falk Winckler , Björn Meyer , Matthias Fahland , Steffen Günther
CPC分类号： C23C14/582 , C23C14/0036 , C23C14/086 , C23C14/5846 , C23C14/5873
摘要： Methods are provided for modifying a transparent and electrically conductive metal-oxide coating deposited on a plastic substrate. At least one surface region of the metal oxide coating is impinged by a pulse-driven electron beam. The impingement of the surface region of the metal oxide coating by the pulse-driven electron beam occurs inside a vacuum chamber into which hydrogen, argon, nitrogen, or oxygen, or a gas mixture of at least two of the above-mentioned gasses has been introduced.
摘要翻译： 提供了用于修饰沉积在塑料基底上的透明和导电金属氧化物涂层的方法。 金属氧化物涂层的至少一个表面区域被脉冲驱动的电子束撞击。 通过脉冲驱动的电子束对金属氧化物涂层的表面区域的冲击发生在真空室内，其中氢，氩，氮或氧或至少两种上述气体的气体混合物已经被 介绍。
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