Method and apparatus for semiconductor wafer planarization
    31.
    发明授权
    Method and apparatus for semiconductor wafer planarization 有权
    用于半导体晶片平面化的方法和装置

    公开(公告)号:US07368017B2

    公开(公告)日:2008-05-06

    申请号:US10734704

    申请日:2003-12-12

    IPC分类号: B05C3/02

    摘要: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

    摘要翻译: 广义而言,本发明提供了一种用于平面化半导体晶片(“晶片”)的方法和装置。 更具体地,本发明提供了在晶片上沉积平坦化层,其中平坦化层用于填充存在于晶片表面上的凹陷区域。 平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。 平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。 辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。 温度升高又会导致电镀反应发生在晶片表面。 通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。

    Coatings for metal cutting tools
    32.
    发明授权
    Coatings for metal cutting tools 失效
    金属切削工具涂料

    公开(公告)号:US07211292B1

    公开(公告)日:2007-05-01

    申请号:US10868417

    申请日:2004-06-15

    IPC分类号: B05D3/02

    摘要: The method is disclosed for coating or impregnating a metal cutting tool with a metal oxide. The method includes the steps of applying a liquid metal carboxylate composition, or a solution thereof, to a substrate material, and exposing the metal cutting tool to an environment that will cause vaporization or dissipation of any excess carboxylic acids in the liquid metal carboxylate composition and conversion of the metal carboxylates to metal oxides.

    摘要翻译: 公开了用金属氧化物涂覆或浸渍金属切削工具的方法。 该方法包括以下步骤:将液态金属羧酸盐组合物或其溶液施加到基底材料上,并将金属切削工具暴露于将导致液态金属羧酸盐组合物中任何过量羧酸蒸发或消散的环境;以及 金属羧酸盐转化为金属氧化物。

    Method for manufacturing a metal organic deposition precursor solution using super-conduction oxide and film superconductor

    公开(公告)号:US20060246216A1

    公开(公告)日:2006-11-02

    申请号:US11332494

    申请日:2006-01-13

    IPC分类号: B05D5/12 B05D3/02

    摘要: There is provided a method of fabricating a precursor solution for a metal organic deposition method using a superconducting oxide as a starting material, the method including dispersing a superconducting material powder in a TFA acid aqueous solution and heating them to dissolve the powder in the TFA solution; increasing a temperature of a hot substrate if the powder is completely dissolved, and the solution is clear, and continuously heating until the solution is vaporized and is in a viscous jelly state; stopping the heating if the solution loses its flowing property completely, and cooling the solution; and dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent, to provide metal organic deposition solution for coating. There is also provided a method of fabricating a thin film-typed superconductor using a metal organic deposition method, the method including dispersing a superconducting material powder in a TFA acid aqueous solution and heating them to dissolve the powder in the TFA solution; increasing a temperature of a hot substrate if the powder is completely dissolved, and the solution is clear, and continuously heating until the solution is vaporized and is in a viscous jelly state; stopping the heating if the solution loses its flowing property completely, and cooling the solution; dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent, to provide a superconducting material powder-TFA precursor solution; after forming a textured oxide buffer layer on a textured metal substrate, or forming a textured oxide template on a metal substrate and forming an oxide buffer layer thereon, dropping the superconducting material powder-TFA precursor solution on the single crystal metal substrate so as to deposit a thin film; and drying it to form the thin film; and applying a calcination heat treatment on the thin film to provide the thin film with a superconducting property. In the method of fabricating a thin film superconducting conductor using REBa2Cu3O7-x (RE=rare earth elements such as Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc. or mixture thereof), a precursor solution is fabricated by dissolving REBa2Cu3O7-x (RE=rare earth elements such as Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc. or mixture thereof) group of oxide into TFA acid aqueous solution, and using the precursor solution, the superconducting conductor can be provided more easily with a lower price than a conventional precursor solution.

    Method of liquid deposition by selection of liquid viscosity and other precursor properties
    35.
    发明授权
    Method of liquid deposition by selection of liquid viscosity and other precursor properties 有权
    通过选择液体粘度和其他前体性质进行液体沉积的方法

    公开(公告)号:US06413883B1

    公开(公告)日:2002-07-02

    申请号:US09243254

    申请日:1999-02-03

    IPC分类号: H01L2131

    摘要: A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

    摘要翻译: 将多个液体,每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质,使得当将前体施加到基底并进行处理时,所得到的固体材料薄膜具有平滑和平坦的表面。 通常,物理性质是前体的粘度,其被选择为相对较低,在1-2厘泊的范围内。

    METHOD FOR COATING SUBSTRATE WITH METAL OXIDE COATING
    37.
    发明申请
    METHOD FOR COATING SUBSTRATE WITH METAL OXIDE COATING 无效
    用金属氧化物涂层涂覆基材的方法

    公开(公告)号:US20020041928A1

    公开(公告)日:2002-04-11

    申请号:US08824418

    申请日:1997-03-26

    IPC分类号: B05D003/02

    摘要: The method is disclosed for coating or impregnating a substrate with a metal oxide. The method includes the steps of applying a liquid metal carboxylate composition, or a solution thereof, to a substrate material, and exposing the substrate material to an environment that will cause vaporization or dissipation of any excess carboxylic acids in the liquid metal carboxylate composition and conversion of the metal carboxylates to metal oxides.

    摘要翻译: 公开了用金属氧化物涂覆或浸渍衬底的方法。 该方法包括以下步骤:将液态金属羧酸盐组合物或其溶液施加到基底材料上,并将基底材料暴露于将导致液态金属羧酸盐组合物中任何过量的羧酸蒸发或消散的环境中,并且转化 的金属羧酸盐与金属氧化物反应。