摘要:
Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.
摘要:
The method is disclosed for coating or impregnating a metal cutting tool with a metal oxide. The method includes the steps of applying a liquid metal carboxylate composition, or a solution thereof, to a substrate material, and exposing the metal cutting tool to an environment that will cause vaporization or dissipation of any excess carboxylic acids in the liquid metal carboxylate composition and conversion of the metal carboxylates to metal oxides.
摘要:
There is provided a method of fabricating a precursor solution for a metal organic deposition method using a superconducting oxide as a starting material, the method including dispersing a superconducting material powder in a TFA acid aqueous solution and heating them to dissolve the powder in the TFA solution; increasing a temperature of a hot substrate if the powder is completely dissolved, and the solution is clear, and continuously heating until the solution is vaporized and is in a viscous jelly state; stopping the heating if the solution loses its flowing property completely, and cooling the solution; and dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent, to provide metal organic deposition solution for coating. There is also provided a method of fabricating a thin film-typed superconductor using a metal organic deposition method, the method including dispersing a superconducting material powder in a TFA acid aqueous solution and heating them to dissolve the powder in the TFA solution; increasing a temperature of a hot substrate if the powder is completely dissolved, and the solution is clear, and continuously heating until the solution is vaporized and is in a viscous jelly state; stopping the heating if the solution loses its flowing property completely, and cooling the solution; dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent, to provide a superconducting material powder-TFA precursor solution; after forming a textured oxide buffer layer on a textured metal substrate, or forming a textured oxide template on a metal substrate and forming an oxide buffer layer thereon, dropping the superconducting material powder-TFA precursor solution on the single crystal metal substrate so as to deposit a thin film; and drying it to form the thin film; and applying a calcination heat treatment on the thin film to provide the thin film with a superconducting property. In the method of fabricating a thin film superconducting conductor using REBa2Cu3O7-x (RE=rare earth elements such as Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc. or mixture thereof), a precursor solution is fabricated by dissolving REBa2Cu3O7-x (RE=rare earth elements such as Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc. or mixture thereof) group of oxide into TFA acid aqueous solution, and using the precursor solution, the superconducting conductor can be provided more easily with a lower price than a conventional precursor solution.
摘要:
A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.
摘要:
A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要:
A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.
摘要:
The method is disclosed for coating or impregnating a substrate with a metal oxide. The method includes the steps of applying a liquid metal carboxylate composition, or a solution thereof, to a substrate material, and exposing the substrate material to an environment that will cause vaporization or dissipation of any excess carboxylic acids in the liquid metal carboxylate composition and conversion of the metal carboxylates to metal oxides.
摘要:
Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要:
The present invention provides a method for making a ceramic matrix composite comprising forming an infiltrated fiber reinforcement by infiltrating a plurality of plies of a fibrous material with a precursor polymer which decomposes to a substantially pure product selected from the group consisting of a refractory metal carbide and a refractory metal boride, and exposing the infiltrated fiber reinforcement to conditions effective to cure the precursor polymer and to decompose the precursor polymer to said substantially pure product.
摘要:
A low cost chemical spray deposition of metal and mixed metal chalcogenides is accomplished by spray depositing an oxide film from a mixture of a salt of the metal in solution with a water soluble hydrocarbon and water solvent. This oxide film is subjected to a heat treatment in the presence of a chalcogenide gas to induce an ion exchange process transforming the metal oxide or mixed metal oxide into the chalcogenide films of the present invention.The deposition process is used to provide efficient selective absorbing surfaces for a solar thermal energy converter. The process may further be employed to produce a thin film photovoltaic device for converting light energy into electricity.