Abstract:
An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.
Abstract:
A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system.
Abstract:
A method is provided for setting a position of a carrier element, arranged in a particle beam device, that holds an object. The particle beam device has a beam generator for generating a particle beam and an objective for focusing the particle beam. The carrier element is movable using a first stepper motor. A movement of the carrier element is started by actuating the first stepper motor using a first motor current in the form of an alternating current. The first motor current is set to a first frequency and a first amplitude. The movement of the carrier element is decelerated by reducing the first frequency and by reducing the first amplitude of the first motor current. The first frequency is reduced to zero during a first period of time. The first amplitude is reduced to an amplitude of a first holding current during the first period of time.
Abstract:
There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.
Abstract:
Technique capable of achieving shortening of settling time, which is caused by ringing, etc. of a blanking control signal is provided. A measuring/inspecting apparatus is configured to have a main blanking unit and a correction blanking control unit as a high-speed switching control unit of an electron beam. During the period of switching of a main blanking control signal from ON to OFF, a correction blanking control signal is applied in real time in synchronization with the switching. The ringing, etc. caused by the main blanking are corrected so as to be cancelled out by that, the settling time is shortened as a result.
Abstract:
The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.
Abstract:
An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
Abstract:
An apparatus to permit a viewer of a digital microscopy original image to manipulate the display and/or the microscope to obtain an enhanced view of a region of interest within the original image. In one preferred embodiment a spotlight mode matches the gray shade scale for a spotlight region-of-interest to the pixel intensity variation present in the spotlight region. The gray shade scale used for the spotlight mode may then be generalized to the original image. In a preferred embodiment, spotlight mode provides an easy mechanism for permitting a user to command a re-imaging of a selected spotlight region from a displayed image. Such re-imaging may permit the use of imaging parameter selections that better fit the spotlight region.
Abstract:
A charged particle beam system includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.
Abstract:
An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction.