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    Systems and Methods for Nanowire Growth
    42.
    发明申请
    Systems and Methods for Nanowire Growth 审中-公开
    纳米线生长的系统和方法

    公开(公告)号：US20110156003A1

    公开(公告)日：2011-06-30

    申请号：US12827098

    申请日：2010-06-30

    申请人： David Taylor

    发明人： David Taylor

    IPC分类号： H01L29/02

    CPC分类号： C30B11/12 ,  B82Y10/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  Y10T428/2913

    摘要： The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an etchant gas into the reaction chamber at a first temperature which gas aids in cleaning the surface of the substrate material, contacting the nucleating particles with at least a first precursor gas to initiate nanowire growth, and heating the alloy droplet to a second temperature, whereby nanowires are grown at the site of the nucleating particles. The etchant gas may also be introduced into the reaction chamber during growth of the wires to provide nanowires with low taper.

    摘要翻译： 本发明涉及用于纳米线生长的系统和方法。 在一个实施方案中，提供了用于纳米线生长和掺杂的方法，包括用于外延垂直取向的纳米线生长的方法，包括提供在反应室中沉积有其上的一个或多个成核颗粒的基材，在第一个步骤中将蚀刻剂气体引入反应室 该气体有助于清洁基底材料的表面，使成核颗粒与至少第一前体气体接触以引发纳米线生长，并将合金液滴加热至第二温度，由此纳米线在成核颗粒的位置生长 。 在生长电线期间，也可以将蚀刻剂气体引入反应室，以提供具有低锥度的纳米线。

    Nanowire structures comprising carbon
    44.
    发明授权
    Nanowire structures comprising carbon 有权
    包含碳的纳米线结构

    公开(公告)号：US07939218B2

    公开(公告)日：2011-05-10

    申请号：US11601842

    申请日：2006-11-20

    申请人： Chunming Niu

    发明人： Chunming Niu

    IPC分类号： H01M4/96 ,  C01B31/00 ,  B01D5/12

    CPC分类号： H01B1/04 ,  H01M4/133 ,  H01M4/625 ,  H01M4/8605 ,  H01M4/8657 ,  H01M8/1004 ,  H01M8/1097 ,  Y02P70/56 ,  Y10T428/2918

    摘要： The present invention is directed to nanowire structures and interconnected nanowire networks comprising such structures, as well as methods for their production. The nanowire structures comprise a nanowire core, a carbon-based layer, and in additional embodiments, carbon-based structures such as nanographitic plates consisting of graphenes formed on the nanowire cores, interconnecting the nanowire structures in the networks. The networks are porous structures that can be formed into membranes or particles. The nanowire structures and the networks formed using them are useful in catalyst and electrode applications, including fuel cells, as well as field emission devices, support substrates and chromatographic applications.

    摘要翻译： 本发明涉及包括这种结构的纳米线结构和互连的纳米线网络，以及它们的生产方法。 纳米线结构包括纳米线芯，碳基层，并且在另外的实施方案中，碳基结构例如由形成在纳米线芯上的石墨烯组成的纳米尺度板，互连网络中的纳米线结构。 网络是可以形成膜或颗粒的多孔结构。 使用它们形成的纳米线结构和网络可用于催化剂和电极应用，包括燃料电池，以及场致发射器件，支撑衬底和色谱应用。

    Nanocrystal taggants
    45.
    发明授权
    Nanocrystal taggants 有权
    纳米晶体标签

    公开(公告)号：US07912653B1

    公开(公告)日：2011-03-22

    申请号：US11075364

    申请日：2005-03-08

    申请人： Erik C. Scher ,  Stephen A. Empedocles

    发明人： Erik C. Scher ,  Stephen A. Empedocles

    IPC分类号： G01N33/48 ,  G01N31/00 ,  C12Q1/68

    CPC分类号： G01N21/6489 ,  B82Y15/00 ,  B82Y30/00 ,  G01N21/643 ,  G06K19/06009

    摘要： The compositions, methods and systems of the invention provide nanocrystal taggants for unobtrusive monitoring of objects. Objects can be tagged with nanocrystal taggant compositions for detection of informative invisible emissions on illumination with appropriate excitation wavelengths. Authentication schemes are also provided that takes advantage of the unique emission and absorption characteristics of nanocrystals to create a unique spectral code that is far more difficult to decode and replicate than those previously employed.

    摘要翻译： 本发明的组合物，方法和系统提供用于不引人注目的监测物体的纳米晶体标记物。 物体可以用纳米晶体标签剂组合物进行标记，用于在具有适当激发波长的照明上检测信息不可见的发射。 还提供了认证方案，其利用纳米晶体的独特的发射和吸收特性来产生比先前使用的更难解码和复制的独特光谱代码。

    Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices
    47.
    发明授权
    Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices 有权
    制造基于纳米线的电子器件中改进接触的栅极配置的方法

    公开(公告)号：US07871870B2

    公开(公告)日：2011-01-18

    申请号：US12703043

    申请日：2010-02-09

    申请人： Shahriar Mostarshed ,  Jian Chen ,  Francisco A. Leon ,  Yaoling Pan ,  Linda T. Romano

    发明人： Shahriar Mostarshed ,  Jian Chen ,  Francisco A. Leon ,  Yaoling Pan ,  Linda T. Romano

    IPC分类号： H01L21/00 ,  H01L27/108

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78645 ,  H01L29/78681 ,  H01L29/7869 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/938

    摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.

    摘要翻译： 描述了具有改进的门结构的电子设备的方法，系统和装置。 电子装置包括至少一个纳米线。 栅极接触沿至少一个纳米线的长度的至少一部分定位。 介电材料层在栅极接触和至少一个纳米线之间。 源极触点和漏极触点与至少一个纳米线接触。 源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。 另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。 环形第一栅极区域沿着纳米线长度的一部分包围纳米线。 第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。 源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

    Electron blocking layers for electronic devices
    48.
    发明授权
    Electron blocking layers for electronic devices 有权
    电子器件用电子阻挡层

    公开(公告)号：US07847341B2

    公开(公告)日：2010-12-07

    申请号：US12247917

    申请日：2008-10-08

    申请人： Jian Chen ,  Rahul Sharangpani

    发明人： Jian Chen ,  Rahul Sharangpani

    IPC分类号： H01L29/792 ,  H01L29/788

    CPC分类号： G11C11/5621 ,  B82Y10/00 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66833

    摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

    摘要翻译： 描述诸如非易失性存储器件的电子设备的方法和装置。 存储器件包括多层控制电介质，例如双层或三层。 多层控制电介质包括高k电介质材料如氧化铝，氧化铪和/或铪铝氧化物的混合膜的组合。 多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器程序/擦除窗口，改善的可靠性和稳定性，具有单一或多状态（例如，两个，三个或四个位）操作的可行性。