公开(公告)号：US20110037082A1

公开(公告)日：2011-02-17

申请号：US12540523

申请日：2009-08-13

Applicant: Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

Inventor： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC: H01L33/00

CPC classification number: H05B33/0815 ,  H01L2224/16225 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H05B33/0842 ,  Y02B20/341 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，衬底上的专用集成电路（ASIC）以及与专用集成电路（ASIC）电连接的衬底上的至少一个发光二极管（LED）。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成系统。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US20100258834A1

公开(公告)日：2010-10-14

申请号：US12823866

申请日：2010-06-25

Applicant: WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

Inventor： WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L33/10 ,  H01L33/36 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US07524686B2

公开(公告)日：2009-04-28

申请号：US11690443

申请日：2007-03-23

Applicant: Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

Inventor： Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

IPC: H01L21/66

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/20

Abstract: Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.

Abstract translation: 提供了通过提供具有LED堆叠的LED晶片组件并选择性地使LED堆叠的n掺杂层的发光表面粗糙化和/或纹理化来制造半导体发光二极管（LED）器件的方法。 以这种方式，提高了从LED装置的光提取。

公开(公告)号：US20080194051A1

公开(公告)日：2008-08-14

申请号：US11548647

申请日：2006-10-11

Applicant: CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

Inventor： CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

IPC: H01L33/00 ,  H01L21/304

CPC classification number: H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

Abstract: Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US20070166851A1

公开(公告)日：2007-07-19

申请号：US11618468

申请日：2006-12-29

Applicant: Chuong Tran ,  Trung Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

Inventor： Chuong Tran ,  Trung Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

IPC: H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract translation: 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：US11005018B2

公开(公告)日：2021-05-11

申请号：US16197103

申请日：2018-11-20

Applicant: Chen-Fu Chu

Inventor： Chen-Fu Chu

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/52 ,  H01L25/075 ,  H01L25/16 ,  H01L33/36 ,  H01L33/50 ,  H01L33/56 ,  H01L21/78 ,  H01L21/304 ,  H01L33/00 ,  H01S5/02232 ,  H01S5/022 ,  B05C5/02 ,  B05C9/12 ,  B05C9/14 ,  C23C14/14 ,  C23C14/34 ,  C23C16/455 ,  C23C16/50 ,  H01L31/16 ,  H01L33/32 ,  H01L33/44 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64

Abstract: A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

公开(公告)号：US10170671B2

公开(公告)日：2019-01-01

申请号：US15604160

申请日：2017-05-24

Applicant: Chen-Fu Chu

Inventor： Chen-Fu Chu

IPC: H01L21/78 ,  H01L33/56 ,  H01L27/15 ,  H01L21/304 ,  H01L33/00 ,  C23C14/14 ,  C23C14/34 ,  C23C16/455 ,  C23C16/50 ,  H01L25/075 ,  H01L25/16 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/52 ,  H01S5/022 ,  B05C5/02 ,  B05C9/12 ,  B05C9/14 ,  H01L31/16 ,  H01L33/32 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64

Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

公开(公告)号：US20170365755A1

公开(公告)日：2017-12-21

申请号：US15604160

申请日：2017-05-24

Applicant: Chen-Fu CHU

Inventor： Chen-Fu CHU

IPC: H01L33/56 ,  H01L33/44 ,  C23C14/14 ,  C23C14/34 ,  C23C16/455 ,  H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L33/50 ,  H01L33/00 ,  C23C16/50 ,  H01L33/36 ,  B05C9/12 ,  B05C9/14 ,  H01L31/16 ,  H01L33/32 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  B05C5/02

CPC classification number: H01L33/56 ,  B05C5/0204 ,  B05C9/12 ,  B05C9/14 ,  C23C14/14 ,  C23C14/34 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/304 ,  H01L21/78 ,  H01L21/7806 ,  H01L21/7813 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/153 ,  H01L27/156 ,  H01L31/16 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44 ,  H01L33/505 ,  H01L33/52 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01S5/02228 ,  H01S5/02232 ,  H01S5/02236 ,  H01S5/0224

Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

公开(公告)号：US20140339496A1

公开(公告)日：2014-11-20

申请号：US13895421

申请日：2013-05-16

Applicant: Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

Inventor： Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

IPC: H01L33/22 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/12041

Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Abstract translation: 垂直发光二极管（VLED）裸片包括具有第一类型限制层的外延结构，在被配置为发光的多量子阱（MQW）上的第一类型限制层上的有源层和第二类型限制层 约束层具有粗糙表面。 在第一实施例中，粗糙表面包括在其主表面上具有深度（d）的孔的图案，其由主表面上的高度（h）的突起图案包围。 在第二实施例中，粗糙表面包括由二次突起图案包围的一次隆起图案。

公开(公告)号：US08778780B1

公开(公告)日：2014-07-15

申请号：US11548633

申请日：2006-10-11

Applicant: Trung-Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

Inventor： Trung-Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/405 ,  H01L2933/0075 ,  H01S5/0217 ,  H01S5/32341

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。