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128 条记录 (耗时 0.018 秒)

    Memory device using a transistor and one resistant element for storage
    42.
    发明授权
    Memory device using a transistor and one resistant element for storage 有权
    使用晶体管和一个电阻元件进行存储的存储器件

    公开(公告)号：US06838727B2

    公开(公告)日：2005-01-04

    申请号：US10602736

    申请日：2003-06-25

    申请人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    发明人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC分类号： H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

    CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Ferroelectric emitter
    43.
    发明授权
    Ferroelectric emitter 失效
    铁电发射器

    公开(公告)号：US06479924B1

    公开(公告)日：2002-11-12

    申请号：US09636634

    申请日：2000-08-11

    申请人： In-Kyeong Yoo

    发明人： In-Kyeong Yoo

    IPC分类号： H01J2100

    CPC分类号： H01J1/30 ,  H01J2201/306

    摘要： A ferroelectric emitter is described. The ferroelectric emitter of the present invention includes a ferroelectric layer having a first side, an opposing second side, and a top surface, a first and a second electrode formed along the top surface of the ferroelectric layer, and a mask layer which has a predetermined pattern and is formed along the top surface of the ferroelectric layer between the first and second electrodes. When used in ferroelectric switching emission lithography, the ferroelectric emitter of the present invention allows electron emission from a wide or narrow gap of a mask layer and from an isolated pattern such as a doughnut shape while facilitating re-poling in pyroelectric electron emission.

    摘要翻译： 描述了铁电发射器。 本发明的铁电体发射体包括具有第一面，相对的第二面以及顶面的强电介质层，沿铁电体层的上表面形成的第一电极和第二电极，以及具有规定的 并且沿着铁电层的顶表面在第一和第二电极之间形成。 当用于铁电开关发射光刻时，本发明的铁电发射体允许从掩模层的宽或窄间隙以及诸如环形形状的隔离图案发射电子，同时促进热电子发射中的再极化。

    Optical elements including light sources and waveguides and information storage devices including the same
    45.
    发明授权
    Optical elements including light sources and waveguides and information storage devices including the same 有权
    包括光源和波导的光学元件和包括其的信息存储装置

    公开(公告)号：US08526288B2

    公开(公告)日：2013-09-03

    申请号：US13297713

    申请日：2011-11-16

    申请人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    发明人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    IPC分类号： G11B7/00

    CPC分类号： G11C13/06 ,  G02B5/008 ,  G02F2203/10

    摘要： An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

    摘要翻译： 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

    Non-volatile memory device and method of manufacturing the same
    46.
    发明授权
    Non-volatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08357992B2

    公开(公告)日：2013-01-22

    申请号：US12659516

    申请日：2010-03-11

    申请人： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    发明人： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    IPC分类号： H01L23/52 ,  H01L29/00

    CPC分类号： H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

    摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

    摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。

    NANOSTRUCTURED ACOUSTO-OPTIC DEVICE, AND OPTICAL SCANNER, OPTICAL MODULATOR, AND HOLOGRAPHIC DISPLAY APPARATUS USING THE NANOSTRUCTURED ACOUSTO-OPTIC DEVICE
    47.
    发明申请
    NANOSTRUCTURED ACOUSTO-OPTIC DEVICE, AND OPTICAL SCANNER, OPTICAL MODULATOR, AND HOLOGRAPHIC DISPLAY APPARATUS USING THE NANOSTRUCTURED ACOUSTO-OPTIC DEVICE 有权
    纳米结构光学器件，光学扫描仪，光学调制器，以及使用纳米结构的光学器件的全息显示器

    公开(公告)号：US20120194885A1

    公开(公告)日：2012-08-02

    申请号：US13360616

    申请日：2012-01-27

    申请人： Seung-hoon HAN ,  In-kyeong YOO ,  Sang-yoon LEE ,  Hong-seok LEE ,  Moon-gyu HAN ,  Sun-kook KIM

    发明人： Seung-hoon HAN ,  In-kyeong YOO ,  Sang-yoon LEE ,  Hong-seok LEE ,  Moon-gyu HAN ,  Sun-kook KIM

    IPC分类号： G03H1/10 ,  G02B26/10 ,  G02F1/33

    CPC分类号： G02F1/335 ,  B82Y20/00 ,  G02B27/22 ,  G02F1/017 ,  G02F1/11 ,  G02F1/292 ,  G02F2001/291 ,  G02F2202/36 ,  G02F2202/40 ,  G02F2202/42 ,  G02F2203/22 ,  G03H1/2286 ,  G03H2001/2292 ,  Y10S977/834

    摘要： An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.

    摘要翻译： 一种能够通过使用纳米结构的声光介质和光学扫描器，光学调制器，二维/三维（2D / 3D）转换立体视觉增强输出光的衍射角的范围的声光器件 图像显示装置和使用该声光装置的全息显示装置。 声光装置可以包括由至少两个不同介质形成的纳米结构的声光介质，所述至少两个介质彼此重复交替，其中所述至少两种不同介质中的至少一种包括声光介质。 具有上述结构的声光装置可以增加输出光的衍射角的范围。 因此，诸如光学扫描器，光学调制器，2D / 3D转换立体图像显示装置和全息显示装置的各种系统可能不需要单独的光学系统来增加操作角度范围，从而减小系统的尺寸 和/或提高系统的分辨率。