Material Deposition Prevention on a Workpiece in a Process Chamber

    公开(公告)号:US20180286640A1

    公开(公告)日:2018-10-04

    申请号:US15936764

    申请日:2018-03-27

    Abstract: Focus ring assemblies for plasma processing apparatus are provided. In one example implementation, an apparatus includes a plasma source configured to generate a plasma. The apparatus includes a chamber configured to receive a workpiece. The apparatus includes a workpiece support contained in the chamber and configured to support the workpiece. The apparatus includes a focus ring assembly. The focus ring assembly includes a focus ring having an upper tier and a lower tier. An inner edge of the upper tier can be separated a lateral distance of at least about 3 mm from an outer edge of the workpiece located on the workpiece support.

    Inductive plasma source with high coupling efficiency

    公开(公告)号:US10037867B2

    公开(公告)日:2018-07-31

    申请号:US14581348

    申请日:2014-12-23

    Inventor: Valery Godyak

    Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling element and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

    Inductively Coupled Plasma Source for Plasma Processing

    公开(公告)号:US20170243721A1

    公开(公告)日:2017-08-24

    申请号:US15589127

    申请日:2017-05-08

    Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

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