公开(公告)号：US20190088489A1

公开(公告)日：2019-03-21

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20190019684A1

公开(公告)日：2019-01-17

申请号：US16028855

申请日：2018-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Yi Xu ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Vikash Banthia ,  Mei Chang ,  Kazuya Daito

IPC: H01L21/285 ,  C23C16/42 ,  C23C16/455

Abstract: A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.

公开(公告)号：US10109534B2

公开(公告)日：2018-10-23

申请号：US14627861

申请日：2015-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Adam Brand ,  Naomi Yoshida ,  Seshadri Ganguli ,  David Thompson ,  Mei Chang

IPC: H01L21/3205 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the first work function layer and the second feature.

公开(公告)号：US09947578B2

公开(公告)日：2018-04-17

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Yu Lei ,  Vikash Banthia ,  Kai Wu ,  Xinyu Fu ,  Yi Xu ,  Kazuya Daito ,  Feiyue Ma ,  Pulkit Agarwal ,  Chi-Chou Lin ,  Dien-Yeh Wu ,  Guoqiang Jian ,  Wei V. Tang ,  Jonathan Bakke ,  Mei Chang ,  Sundar Ramamurthy

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/311 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/505 ,  C23C16/54

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20180076020A1

公开(公告)日：2018-03-15

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/02074 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US09831109B2

公开(公告)日：2017-11-28

申请号：US14204252

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Ilker Durukan ,  Joel M. Huston ,  Dien-Yeh Wu ,  Chien-Teh Kao ,  Mei Chang

IPC: A62C2/08 ,  H01L21/67

CPC classification number: H01L21/67126 ,  H01L21/6719

Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.

公开(公告)号：US20170194156A1

公开(公告)日：2017-07-06

申请号：US15461842

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/02 ,  C23C16/42 ,  H01L21/3205 ,  C23C16/455

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09601339B2

公开(公告)日：2017-03-21

申请号：US14965349

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US09353440B2

公开(公告)日：2016-05-31

申请号：US14137007

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  B08B9/032 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US20160145738A1

公开(公告)日：2016-05-26

申请号：US14920001

申请日：2015-10-22

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/458 ,  C23C16/02

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

Abstract translation: 描述了相对于电介质表面在金属表面上选择性地沉积金属的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以最小化其上的沉积并将基底暴露于金属前体和醇以沉积膜。