公开(公告)号：US06330165B1

公开(公告)日：2001-12-11

申请号：US09345505

申请日：1999-07-01

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K702

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US5574993A

公开(公告)日：1996-11-12

申请号：US308669

申请日：1994-09-19

申请人： Kunio Kobayashi ,  Tetsuaki Adachi ,  Tsuyoshi Shibuya

发明人： Kunio Kobayashi ,  Tetsuaki Adachi ,  Tsuyoshi Shibuya

IPC分类号： H04B7/26 ,  H03G3/30 ,  H04B7/005 ,  H09B1/04

CPC分类号： H04W52/52 ,  H03G3/3042 ,  Y02B60/50

摘要： A mobile communication apparatus is provided, in which the linearity during a small output power of a radio-frequency power amplifier can be maintained as during a large output power. The input signal power to a radio-frequency power amplifier is decreased by an attenuator during a small power output. The resulting downward trend of the transmission signal power is compensated for by increasing the gain of the radio-frequency amplifier circuit through a transmission power control circuit. Under this condition, the radio-frequency power amplifier is made operable in a linear region of the transistor in the same manner as during a large power output. As a result, the linearity of the amplifier is guaranteed over the whole operating range of the transmission power.

摘要翻译： 提供了一种移动通信装置，其中可以在大输出功率期间保持在射频功率放大器的小输出功率期间的线性度。 在小功率输出期间，通过衰减器降低对射频功率放大器的输入信号功率。 通过通过发送功率控制电路增加射频放大器电路的增益来补偿所产生的发送信号功率的下降趋势。 在这种条件下，射频功率放大器可以在与大功率输出时相同的方式在晶体管的线性区域中可操作。 因此，在发射功率的整个工作范围内保证放大器的线性度。

公开(公告)号：US08295057B2

公开(公告)日：2012-10-23

申请号：US12787154

申请日：2010-05-25

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07227415B2

公开(公告)日：2007-06-05

申请号：US11540510

申请日：2006-10-02

申请人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

发明人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

IPC分类号： H03G3/20 ,  H03F1/32

CPC分类号： H03F1/0211 ,  H03F2200/408 ,  H03G3/3047

摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

摘要翻译： 提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。 在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管 为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。 用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。

公开(公告)号：US20070030073A1

公开(公告)日：2007-02-08

申请号：US11540510

申请日：2006-10-02

申请人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

发明人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

IPC分类号： H03G3/10

CPC分类号： H03F1/0211 ,  H03F2200/408 ,  H03G3/3047

摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

公开(公告)号：US07123094B2

公开(公告)日：2006-10-17

申请号：US10821935

申请日：2004-04-12

申请人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

发明人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

IPC分类号： H03G3/30

CPC分类号： H03F1/0211 ,  H03F2200/408 ,  H03G3/3047

摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

摘要翻译： 提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。 在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管 为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。 用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。

公开(公告)号：US20050269590A1

公开(公告)日：2005-12-08

申请号：US11194701

申请日：2005-08-02

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/04 ,  H01L23/49 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L29/22 ,  H03F3/195 ,  H03F3/60 ,  H05K1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/40

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20050009484A1

公开(公告)日：2005-01-13

申请号：US10862325

申请日：2004-06-08

申请人： Shun Imai ,  Satoshi Sasaki ,  Katsunari Nakazawa ,  Tetsuaki Adachi

发明人： Shun Imai ,  Satoshi Sasaki ,  Katsunari Nakazawa ,  Tetsuaki Adachi

IPC分类号： H01L21/331 ,  H01L29/737 ,  H03F3/195 ,  H03F3/60 ,  H04B1/04 ,  H04B1/00

CPC分类号： H04B1/005 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F3/195 ,  H03F3/24 ,  H03F3/602 ,  H03F2200/39 ,  H04B2001/0408 ,  H01L2924/00014 ,  H01L2924/00

摘要： Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire.

摘要翻译： 在不使用任何滤波电路的情况下，跨频带隔离特性得到显着提高。 在RF功率模块中设置的半导体芯片的中心部分从上部向下形成接地布线层。 该接地布线层形成在GSM侧晶体管与用于放大不同频带的DCS侧晶体管之间的边界上。 在接地布线层上形成有相等间隔的芯片电极，并且任一个芯片电极通过接合线连接到接合电极。 接合电极形成在要安装半导体芯片的模块布线板上，并且接地布线层与其连接。 谐波信号被接地布线层和接合线捕获。

公开(公告)号：US06384686B2

公开(公告)日：2002-05-07

申请号：US09881013

申请日：2001-06-15

申请人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

发明人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

IPC分类号： H03G330

CPC分类号： H03G3/3042 ,  H03G1/0088 ,  H03G3/3047

摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.

摘要翻译： 为了通过提高低功率模式的放大效率来降低功耗，提供了一种无线电通信装置，其中多级配置中的射频功率模块的场效应晶体管中的每一个基于功率由APC电路控制 并且其中在最后级晶体管的栅极和APC电路之间并入校正电路，以在施加基于功率电平指令信号的高电平信号时将线性栅极电压施加到最终级晶体管;以及 以提供等于或低于其他晶体管的栅极电压的最终栅极电压，并且当基于功率指令的低电平信号时，其相对于APC电路的输出电压的增加速率逐渐降低 信号被施加。 当APC电路的输出电压等于或高于规定电压时，使能高功率模式，低功耗模式在低于规定电压时使能。