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41.发明授权公开(公告)号：US10008536B2
公开(公告)日：2018-06-26
申请号：US15403830
申请日：2017-01-11
CPC分类号： H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.
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42.发明申请公开(公告)号：US20170162626A1
公开(公告)日：2017-06-08
申请号：US15403851
申请日：2017-01-11
CPC分类号： H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.
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43.发明申请SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING 审中-公开旋转扭矩雕刻和离子束蚀刻的旋转扭矩MRAM制造公开(公告)号：US20170062707A1
公开(公告)日：2017-03-02
申请号：US15184109
申请日：2016-06-16
发明人： Anthony J. Annunziata , Armand A. Galan , Steve Holmes , Eric A. Joseph , Gen P. Lauer , Qinghuang Lin , Nathan P. Marchack
CPC分类号： H01L43/12 , G03F7/70325 , G03F7/70425 , G11C11/161 , G11C2211/5615 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
摘要翻译： 磁阻存储单元包括具有圆形横截面的磁隧道连接柱。 该柱具有钉扎磁性层，隧道势垒层和自由磁性层。 第一导电触点设置在磁隧道结柱的上方。 第二导电触点设置在磁隧道结柱的下方。
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44.发明授权公开(公告)号：US09346052B2
公开(公告)日：2016-05-24
申请号：US13971166
申请日：2013-08-20
发明人： Qinghuang Lin , Gustavo A. Stolovitzky , Chao Wang , Deqiang Wang
IPC分类号： B01L3/00 , G01N27/447 , G01N33/487
CPC分类号： G01N33/48721 , B01L3/502707 , B01L3/502715 , B01L3/502761 , B01L2200/0663 , B01L2200/12 , B01L2300/042 , B01L2300/0645 , B01L2300/0887 , B01L2300/0896 , B01L2300/161 , B01L2400/0415 , B01L2400/0421 , G01N27/447 , G01N27/44791 , Y10T29/49002
摘要： A device for passing a biopolymer molecule includes a nanochannel formed between a surface relief structure, a patterned layer forming sidewalls of the nanochannel and a sealing layer formed over the patterned layer to encapsulate the nanochannel. The surface relief structure includes a three-dimensionally rounded surface that reduces a channel dimension of the nanochannel at a portion of nanochannel and gradually increases the dimension along the nanochannel toward an opening position, which is configured to receive a biopolymer.
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公开(公告)号：US09171742B2
公开(公告)日：2015-10-27
申请号：US13947543
申请日：2013-07-22
发明人： Evan G. Colgan , Steven A. Cordes , Daniel C. Edelstein , Vijayeshwar D. Khanna , Kenneth Latzko , Qinghuang Lin , Peter J. Sorce , Sri M. Sri-Jayantha , Robert L. Wisnieff , Roy R. Yu
IPC分类号： H01L21/00 , H01L21/50 , H01L25/00 , H01L25/065 , H01L29/06 , H01L23/02 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/50 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2225/06513 , H01L2225/06593 , H01L2924/0002 , H01L2924/10156 , H01L2924/00
摘要： The present disclosure relates to methods and devices for manufacturing a three-dimensional chip package. A method includes forming a linear groove on an alignment rail, attaching an alignment rod to the linear groove, forming alignment channels on a plurality of integrated circuit chips, and aligning the plurality of integrated circuit chips by stacking the plurality of integrated circuit chips along the alignment rail. Another method includes forming an alignment ridge on an alignment rail, forming alignment channels on a plurality of integrated circuit chips, and aligning the plurality of integrated circuit chips by stacking the plurality of integrated circuit chips along the alignment rail.
摘要翻译： 本公开涉及用于制造三维芯片封装的方法和装置。 一种方法包括在对准导轨上形成直线槽，将对准杆连接到线性槽，在多个集成电路芯片上形成对准通道，并通过将多个集成电路芯片沿着 对准导轨 另一种方法包括在对准导轨上形成对准脊，在多个集成电路芯片上形成对准通道，并且通过沿对准导轨堆叠多个集成电路芯片来对准多个集成电路芯片。
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46.发明申请NANOCHANNEL DEVICE WITH THREE DIMENSIONAL GRADIENT BY SINGLE STEP ETCHING FOR MOLECULAR DETECTION 有权具有三维梯度的NANOCHANNEL器件通过单步检测进行分子检测公开(公告)号：US20150252414A1
公开(公告)日：2015-09-10
申请号：US14199248
申请日：2014-03-06
发明人： Jingwei Bai , Qinghuang Lin , Gustavo A. Stolovitzky , Chao Wang , Deqiang Wang
IPC分类号： C12Q1/68
CPC分类号： B01L3/502707 , B01L3/502761 , B01L2200/0663 , B01L2200/12 , B01L2300/0816 , B01L2300/0861 , B01L2300/0896 , B01L2300/12 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81B2203/0338 , B81B2203/0392 , B81C1/00103 , B82Y40/00 , C12Q1/6869 , C12Q1/6874 , G01N33/48721
摘要： A technique includes forming a gradient channel with width and depth gradients. A mask is disposed on top of a substrate. The mask is patterned with at least one elongated channel pattern having different elongated channel pattern widths. A channel is etched in the substrate in a single etching step, the channel having a width gradient and a corresponding depth gradient both simultaneously etched in the single etching step according to the different elongated channel pattern widths in the mask.
摘要翻译： 一种技术包括形成具有宽度和深度梯度的梯度通道。 掩模设置在基板的顶部。 掩模被图案化为具有不同细长通道图案宽度的至少一个细长通道图案。 在单个蚀刻步骤中在衬底中蚀刻沟道，根据掩模中不同的细长沟道图案宽度，通道具有在单个蚀刻步骤中同时蚀刻的宽度梯度和相应的深度梯度。
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公开(公告)号：US20140256133A1
公开(公告)日：2014-09-11
申请号：US13786970
申请日：2013-03-06
发明人： Vamsi Devarapalli , Colin J. Goyette , Michael R. Kennett , Mahmoud Khojasteh , Qinghuang Lin , James J. Steffes , Adam D. Ticknor , Wei-tsu Tseng
IPC分类号： H01L21/02
CPC分类号： H01L21/02068 , H01L21/02074 , H01L21/76883
摘要： A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.
摘要翻译： 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。
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公开(公告)号：US20130292163A1
公开(公告)日：2013-11-07
申请号：US13861452
申请日：2013-04-12
发明人： Robert David Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert Dennis Miller , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： H01B3/30
CPC分类号： H05K1/0326 , C09D183/04 , C09D183/14 , H01B3/307 , H01L21/02126 , H01L21/02216 , H01L21/3122 , H01L21/76802 , H01L21/76808 , H01L21/76814 , H05K2201/0162
摘要： Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
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公开(公告)号：US10752932B2
公开(公告)日：2020-08-25
申请号：US15671938
申请日：2017-08-08
IPC分类号： C12Q1/00 , G01N27/327 , G01N33/94
摘要： Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.
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公开(公告)号：US20200066792A1
公开(公告)日：2020-02-27
申请号：US16671976
申请日：2019-11-01
发明人： Qinghuang Lin
摘要： A method of forming a device that includes encapsulating a magnetic resistive access memory (MRAM) stack with a first patternable low-k dielectric material that is patterned by an exposure to produce a via pattern that extends to circuitry to logic devices. The via pattern is developed forming a via opening. The method further includes forming a second patternable low-k dielectric material over first patternable low-k dielectric material and filling the via opening. The second patternable low-k dielectric material is patterned by a light exposure to produce a first line pattern to the MRAM stack and a second line pattern to the via opening. The first line pattern and the second line pattern are developed to form trench openings. Thereafter, electrically conductive material is formed in the trench openings and the via opening.
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