公开(公告)号：US07064374B2

公开(公告)日：2006-06-20

申请号：US10872895

申请日：2004-06-21

申请人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01L27/108

CPC分类号： H01L28/57 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

公开(公告)号：US06996000B2

公开(公告)日：2006-02-07

申请号：US10961429

申请日：2004-10-07

申请人： Zheng Chen ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Zheng Chen ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： G11C7/00

CPC分类号： G11C11/22

摘要： A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.

摘要翻译： 一种包括多个存储单元的非易失性SRAM存储器，每个存储单元包括一个SRAM存储单元部分和一个包括铁电元件的铁电存储单元部分，该铁电存储单元部分包括用于允许该铁电元件被隔离的开关系统 从所有其他记忆单元中的铁电元件。

公开(公告)号：US06831313B2

公开(公告)日：2004-12-14

申请号：US10332481

申请日：2003-07-22

申请人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

发明人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28291 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

摘要： A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.

摘要翻译： 铁电存储器（436）包括多个存储单元（73,82,100），每个存储单元包含具有铁电元件（18）和电介质元件（19）的显微复合材料的铁电薄膜（15），所述电介质 组分是与铁电体组分不同的化合物。 电介质成分优选为磁通量，即具有比铁电体成分高的结晶速度的材料。 添加磁通管允许铁电薄膜在400℃和550℃之间的温度下结晶。

公开(公告)号：US06582972B1

公开(公告)日：2003-06-24

申请号：US09544697

申请日：2000-04-07

申请人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

发明人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

IPC分类号： H01G2100

CPC分类号： H01L27/11502 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  H01L21/31691

摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.

摘要翻译： 将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此 形成金属氧化物薄膜。 强氧化剂可以是液体或气体。 液体强氧化剂的实例是过氧化氢。 气态强氧化剂的实例是臭氧。 金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。 退火在含氧气氛中进行，优选包括水蒸气。 紫外线（UV）辐射处理可能退火之前。 可以在退火之前从500℃到700℃的范围内的RTP。

公开(公告)号：US06437380B1

公开(公告)日：2002-08-20

申请号：US09819542

申请日：2001-03-28

申请人： Myoungho Lim ,  Vikram Joshi ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Myoungho Lim ,  Vikram Joshi ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2976

CPC分类号： H01L29/516 ,  H01L28/56

摘要： An integrated circuit device includes a thin film of bismuth-containing layered superlattice material having a thickness not exceeding 100 nm, a capping layer thin film of bismuth tantalate, and an electrode. The capping layer has a thickness in a range of from 3 nm to 30 nm and is deposited between the thin film of layered superlattice material and the electrode to increase dielectric breakdown voltage. Preferably the capping layer contains an excess amount of bismuth relative to the stoichiometrically balanced amount represented by the balanced stoichiometric formula BiTaO4. Preferably, the layered superlattice material is ferroelectric SBT or SBTN. Preferably, the integrated circuit device is a nonvolatile ferroelectric memory. Heating treatments for fabrication of the integrated circuit device containing the bismuth tantalate capping layerare conducted at temperatures not exceeding 700° C., preferably in a range of from 650° C. to 700° C.

摘要翻译： 集成电路器件包括厚度不超过100nm的含铋层状超晶格材料薄膜，钽酸铋覆盖层薄膜和电极。 覆盖层的厚度在3nm至30nm的范围内，并且沉积在层状超晶格材料的薄膜和电极之间以增加介电击穿电压。 优选地，封盖层相对于由平衡化学计量式BiTaO 4表示的化学计量平衡量含有过量的铋。 优选地，层状超晶格材料是铁电SBT或SBTN。 优选地，集成电路器件是非易失性铁电存储器。 用于制造包含钽酸铋覆盖层的集成电路器件的加热处理在不超过700℃的温度下进行，优选在650℃至700℃的范围内。

公开(公告)号：US06365927B1

公开(公告)日：2002-04-02

申请号：US09541290

申请日：2000-04-03

申请人： Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of metal oxide material in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following nitrides: aluminum titanium nitride (Al2Ti3N6), aluminum silicon nitride (Al2Si3N6), aluminum niobium nitride (AlNb3N6), aluminum tantalum nitride (AlTa3N6), aluminum copper nitride (Al2Cu3N4), tungsten nitride (WN), and copper nitride (Cu3N2). The thin film of metal oxide is ferroelectric or high-dielectric, nonferroelectric material. Preferably, the metal oxide comprises ferroelectric layered superlattice material. Preferably, the hydrogen barrier layer is located directly over the thin film of metal oxide.

摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到金属氧化物材料的薄膜。 氢扩散阻挡层包括以下氮化物中的至少一种：氮化钛铝（Al 2 Ti 3 N 6），氮化硅铝（Al 2 Si 3 N 6），氮化铌（AlNb 3 N 6），氮化钽铝（AlTa 3 N 6），氮化铝铝（Al 2 Cu 3 N 4） （WN）和氮化铜（Cu3N2）。 金属氧化物的薄膜是铁电或高电介质非电介质材料。 优选地，金属氧化物包括铁电层状超晶格材料。 优选地，氢阻挡层位于金属氧化物的薄膜的正上方。

公开(公告)号：US06339238B1

公开(公告)日：2002-01-15

申请号：US09329670

申请日：1999-06-10

申请人： Myoungho Lim ,  Vikram Joshi ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Myoungho Lim ,  Vikram Joshi ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/223 ,  H01L21/28291 ,  H01L27/0629 ,  H01L29/78391

摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. A cell is selected for writing or reading by application of bias voltages to the source, drain, gate or substrate. A gate voltage equal to one truth table logic value and a drain voltage equal to another truth table logic value are applied via a row decoder, and a substrate bias equal to a third truth table logic value is applied via a column decoder to write to the memory a resultant Ids logic state, which can be non-destructively read by placing a voltage across the source and drain.

摘要翻译： 一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。 通过对源极，漏极，栅极或衬底施加偏置电压来选择单元进行写入或读取。 通过行解码器施加等于一个真值表逻辑值的栅极电压和等于另一个真值表逻辑值的漏极电压，经由列解码器施加等于第三真值表逻辑值的衬底偏置以写入 记录结果Ids逻辑状态，通过在源极和漏极之间放置电压可以非破坏性地读取。

公开(公告)号：US06174213B1

公开(公告)日：2001-01-16

申请号：US09388038

申请日：1999-09-01

申请人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan ,  Akihiro Matsuda ,  Gota Kano ,  Yoshio Yamaguchi ,  Tatsuo Morita ,  Hideo Nagai

发明人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan ,  Akihiro Matsuda ,  Gota Kano ,  Yoshio Yamaguchi ,  Tatsuo Morita ,  Hideo Nagai

IPC分类号： B05D722

CPC分类号： C03C17/3417 ,  C03C17/253 ,  C03C2217/21 ,  C03C2217/211 ,  C03C2217/24 ,  C03C2217/244 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1275 ,  C23C18/1283 ,  C23C18/1291

摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.

摘要翻译： 将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。 将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。 金属氧化物薄膜层可以是导体，保护层或提供其他功能。 膜的厚度为20nm至500nm。 可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

公开(公告)号：US6116184A

公开(公告)日：2000-09-12

申请号：US971890

申请日：1997-11-17

申请人： Narayan Solayappan ,  Robert W. Grant ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Narayan Solayappan ,  Robert W. Grant ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： B05D1/00 ,  B05D1/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  C23C14/00

CPC分类号： C23C18/12 ,  B05D1/007 ,  B05D1/04 ,  C23C16/40 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/45565 ,  C23C18/1216 ,  H01L21/31691 ,  H01L28/55

摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.

摘要翻译： 质量流量控制器控制前体到雾发生器的输送。 使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。 使用粒子惯性分离器精制雾气，使其主要包含负离子，进入减速室，然后通过入口板中的入口端口进入沉积室，该入口板是腔室之间的分隔， 接地电极。 入口板位于要沉积雾的基底的平面上方并且基本上平行。 基板被充电至约5000伏特的电压。 在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。 入口面积大致等于衬底面积。 排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

公开(公告)号：US5523964A

公开(公告)日：1996-06-04

申请号：US224241

申请日：1994-04-07

申请人： Larry D. McMillan ,  Takashi Mihara ,  Hiroyuki Yoshimori ,  John W. Gregory ,  Carlos A. Paz de Araujo

发明人： Larry D. McMillan ,  Takashi Mihara ,  Hiroyuki Yoshimori ,  John W. Gregory ,  Carlos A. Paz de Araujo

IPC分类号： G11C14/00 ,  G11C11/22 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C11/22 ,  G11C11/223

摘要： An integrated circuit non-volatile, non-destructive read-out memory unit includes a ferroelectric capacitor having first and second electrodes, a capacitance Cf, and an area Af, and a transistor having a gate, a source and a drain forming a gate capacitor having an area Ag and a gate capacitance Cg, a gate overlap b, and a channel depth a, with the capacitor first electrode connected to the gate of the transistor. The ferroelectric material has a dielectric constant .epsilon.f and the gate insulator has a dielectric constant .epsilon.g. A source of a constant reference voltage is connectable to the first electrode. A bit line connects to the second electrode. In one embodiment the first electrode and gate are the same conductive member. In another embodiment the second electrode and the gate are the same conductive member and the first electrode is formed by extensions of the transistor source and drains underlying the gate, with the ferroelectric material between the source and drain extensions and the gate. The memory unit has the parametric relationships: Cf

摘要翻译： 集成电路非易失性非破坏性读出存储单元包括具有第一和第二电极的铁电电容器，电容Cf和区域Af，以及具有形成栅极电容器的栅极，源极和漏极的晶体管 具有面积Ag和栅极电容Cg，栅极重叠b和沟道深度a，其中电容器第一电极连接到晶体管的栅极。 铁电材料具有介电常数εf，栅极绝缘体具有介电常数εg。 恒定参考电压的源可连接到第一电极。 位线连接到第二电极。 在一个实施例中，第一电极和栅极是相同的导电构件。 在另一个实施例中，第二电极和栅极是相同的导电构件，并且第一电极由晶体管源的延伸和栅极下方的漏极形成，铁电材料在源极和漏极延伸部分之间以及栅极之间。 存储器单元具有参数关系：Cf <5xCg，Af / = 2a和epsilon g> / = epsilon f / 8。