公开(公告)号：US20060073673A1

公开(公告)日：2006-04-06

申请号：US10958126

申请日：2004-10-04

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/46 ,  C11D7/32

CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract translation: 本发明的实施方案描述了表面的氨氢氧化物处理。 在一个实施方案中，包括氢氧化铵（NH 4 OH），水（H 2 O 2 O），螯合剂和用于清洁硅的表面活性剂的方法和清洗溶液 描述锗基底。 由于过氧化氢蚀刻锗，清洗溶液不包括过氧化氢（H 2 O 2 O 2）。 在另一个实施方案中，描述了通过含有氢氧化铵（NH 4 OH）的表面处理促进氧化表面与另一表面结合的端基的半导体衬底上的氧化表面的方法。 蒸发表面处理后，氧化表面立即与第二基板结合。

公开(公告)号：US07011715B2

公开(公告)日：2006-03-14

申请号：US10407692

申请日：2003-04-03

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B7/04 ,  B08B3/02

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

公开(公告)号：US20060035475A1

公开(公告)日：2006-02-16

申请号：US10918757

申请日：2004-08-12

Applicant: Steven Verhaverbeke ,  Brian Brown

Inventor： Steven Verhaverbeke ,  Brian Brown

IPC: H01L21/31 ,  H01L21/302

CPC classification number: H01L21/67155 ,  B08B3/12 ,  B08B7/04 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67057

Abstract: According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a semiconductor substrate support, a dispense head positioned over the semiconductor substrate support, a liquid container, and a transport subsystem. A semiconductor substrate may be placed on the semiconductor substrate support while a first semiconductor processing liquid is dispensed thereon. The wafer may also be spun by the semiconductor substrate support to remove the first semiconductor processing liquid. The transport subsystem may transport the semiconductor substrate to the liquid container where the semiconductor substrate may be immersed in a second semiconductor processing liquid. The semiconductor substrate may then be removed from the second semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the second semiconductor processing liquid.

Abstract translation: 根据本发明的一个方面，提供半导体衬底处理装置和半导体衬底的处理方法。 半导体衬底处理设备可以包括半导体衬底支撑件，位于半导体衬底支架上方的分配头，液体容器和运输子系统。 半导体衬底可以放置在半导体衬底支撑件上，同时分配第一半导体处理液体。 也可以通过半导体衬底支撑来旋转晶片以去除第一半导体处理液体。 输送子系统可以将半导体衬底输送到半导体衬底浸入第二半导体处理液中的液体容器。 然后可以从第二半导体处理液体中去除半导体衬底，同时蒸汽指向半导体衬底的表面，其中半导体衬底与第二半导体处理液体的表面接触。

公开(公告)号：US20050156485A1

公开(公告)日：2005-07-21

申请号：US11034475

申请日：2005-01-12

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: B06B1/02 ,  H01L21/00 ,  H03H7/40 ,  H02N2/00 ,  H01L41/04

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract translation: 一种用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

公开(公告)号：US06495099B1

公开(公告)日：2002-12-17

申请号：US09209101

申请日：1998-12-10

Applicant: Steven Verhaverbeke ,  Christopher F. McConnell

Inventor： Steven Verhaverbeke ,  Christopher F. McConnell

IPC: A61L900

CPC classification number: H01L21/02052 ,  H01L21/02019 ,  H01L21/30608 ,  H01L21/31111

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. The electronic component precursors are placed in a reaction chamber and contacted with at least one reactive chemical process fluid for a selected period of time. The reactive process fluid can be, for example, hydrofluoric acid. The electronic component precursors are then exposed directly to a drying fluid, with no intervening rinsing fluid, for a selected period of time. The drying fluid can be a vapor.

Abstract translation: 本发明涉及用于制造电子元件前体（例如集成电路中使用的半导体晶片）的湿法加工方法。 将电子元件前体放置在反应室中并与至少一种反应性化学工艺流体接触一段选定的时间。 反应过程流体可以是例如氢氟酸。 然后将电子元件前体直接暴露于干燥流体，而没有中间冲洗流体在选定的时间段内。 干燥流体可以是蒸气。

公开(公告)号：US06245158B1

公开(公告)日：2001-06-12

申请号：US09324813

申请日：1999-06-02

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B310

CPC classification number: H01L21/02052

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. More specifically, this invention relates to methods of manufacturing electronic component precursors using liquids of varying temperature.

Abstract translation: 本发明涉及用于制造电子元件前体（例如集成电路中使用的半导体晶片）的湿法加工方法。 更具体地，本发明涉及使用不同温度的液体制造电子元件前体的方法。

公开(公告)号：US08778816B2

公开(公告)日：2014-07-15

申请号：US13192041

申请日：2011-07-27

Applicant: Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

Inventor： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02312

Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

Abstract translation: 描述制备用于后续成膜工艺的基材的方法。 还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。 描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。 热氧化物表面在基底的温度下暴露于低于饱和蒸汽压的水分压，以将基本上没有反应性表面终止的致密热氧化物转化成具有羟基表面终止的表面。 这可以在诸如氨的路易斯碱存在下进行。

公开(公告)号：US08658242B2

公开(公告)日：2014-02-25

申请号：US13193539

申请日：2011-07-28

Applicant: Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

Inventor： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC: B05D5/12

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract translation: 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基底上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US08318589B2

公开(公告)日：2012-11-27

申请号：US12748780

申请日：2010-03-29

Applicant: Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/20

CPC classification number: C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract translation: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US20120164470A1

公开(公告)日：2012-06-28

申请号：US13331870

申请日：2011-12-20

Applicant: Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

Inventor： Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

IPC: B32B15/01 ,  C23C28/00 ,  C25D3/50 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C23C28/021 ,  B32B15/018 ,  B82Y30/00 ,  B82Y40/00 ,  C23C18/1635 ,  C23C18/1658 ,  C23C18/54 ,  C23C28/023 ,  C30B7/14 ,  C30B29/02 ,  C30B29/60 ,  Y10T428/12438

Abstract: Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process. In one embodiment, the core-sheath nanostructures are silver-nickel core-sheath nanowires, wherein each silver-nickel core-sheath nanowire has a sheath layer of nickel disposed over and encompassing a catalytic metal layer of palladium disposed on a nanowire core of silver.

Abstract translation: 本发明的实施方案通常提供用于形成这种纳米结构的芯鞘纳米结构和方法。 在一个实施方案中，形成芯鞘纳米结构的方法包括搅拌包含银纳米结构的水性分散体，同时在电偶置换过程中向催化金属盐溶液加入催化金属盐溶液并形成催化金属涂覆的银纳米结构。 该方法还包括搅拌含有分散在有机溶剂中的催化金属涂覆的银纳米结构的有机溶剂分散体，同时向有机溶剂分散体中加入镍盐溶液，然后向该有机溶剂分散体中加入还原溶液以形成银 - 镍 芯鞘纳米结构在镀镍过程中。 在一个实施方案中，芯鞘纳米结构是银 - 镍芯鞘纳米线，其中每个银 - 镍芯鞘纳米线具有设置在镀银的纳米线芯上的钯的催化金属层上并包围镍的护套层 。