公开(公告)号：US6083064A

公开(公告)日：2000-07-04

申请号：US130143

申请日：1998-08-06

申请人： Takahide Watanabe ,  Masanori Takahashi ,  Hitoshi Watanabe

发明人： Takahide Watanabe ,  Masanori Takahashi ,  Hitoshi Watanabe

IPC分类号： F01P3/02 ,  F01P3/20 ,  F02B61/04 ,  F02B75/02 ,  F02B75/18 ,  F02B75/20 ,  B63H21/10

CPC分类号： F01P3/02 ,  F01P3/202 ,  F02B61/045 ,  F02B75/20 ,  F01P2060/16 ,  F02B2075/027 ,  F02B2075/1816 ,  F02B2275/18

摘要： An outboard motor cooling system wherein the coolant is circulated through the various cooling jackets so that it first flows into proximity with at least a portion of the exhaust system cooling jacket and then into the cooling jackets of the main engine body that cool the cylinder bore and combustion chamber. Sacrificial anodes are positioned both in the main engine body cooling jacket and in the exhaust system cooling jacket. In addition, a temperature sensor is positioned in a low portion of the cooling jacket and where the water has passed through the exhaust cooling jacket and before it enters the main engine body cooling jacket so as to provide accurate temperature indication while protecting the temperature sensor from excess temperature conditions particularly after engine shut off.

摘要翻译： 舷外马达冷却系统，其中冷却剂循环通过各种冷却夹套，使得其首先流动到排气系统冷却套的至少一部分附近，然后进入冷却缸孔的主发动机主体的冷却套， 燃烧室。 牺牲阳极位于主机体冷却套和排气系统冷却套中。 此外，温度传感器位于冷却套的低部分中，并且水已经通过排气冷却套并且在其进入主发动机主体冷却套之前，以便提供精确的温度指示，同时保护温度传感器免受 发动机关闭后特别是过温。

公开(公告)号：US5873755A

公开(公告)日：1999-02-23

申请号：US823751

申请日：1997-03-25

申请人： Masanori Takahashi ,  Hitoshi Watanabe

发明人： Masanori Takahashi ,  Hitoshi Watanabe

IPC分类号： F02B61/04 ,  F02B75/02 ,  F02B75/18 ,  F02B75/20 ,  F02M35/16 ,  B63H20/32

CPC分类号： F02M35/10013 ,  F02B61/045 ,  F02B75/20 ,  F02M35/10262 ,  F02M35/112 ,  F02M35/167 ,  F02B2075/027 ,  F02B2075/1816 ,  F02B2275/18 ,  F02D9/1095 ,  Y02T10/146

摘要： A cowling for an outboard motor of the type having a water propulsion device powered by an internal combustion engine positioned within an engine compartment defined by the cowling, is disclosed. The cowling has at least one intake vent positioned therein and includes an engine cover which defines an isolated intake air path from the vent across a top end of the engine to an engine air intake. The cover also defines a chamber in which a flywheel rotated by the crankshaft at the top end of the engine is positioned. The chamber has an inlet in communication with the engine compartment, and an outlet leading to an exhaust passage. The exhaust passage leads to an exhaust vent in the cowling.

摘要翻译： 公开了一种用于具有由位于由罩罩限定的发动机室内的内燃机供电的水推进装置的类型的舷外马达的整流罩。 整流罩具有定位在其中的至少一个进气口，并且包括发动机盖，该发动机盖限定了从发动机的顶端到发动机进气口的排气口的隔离的进气通道。 盖子还限定了一个腔室，在该腔室中，由发动机顶端的曲轴旋转的飞轮定位在该腔室中。 腔室具有与发动机室连通的入口和通向排气通道的出口。 排气通道通向整流罩内的排气口。

公开(公告)号：US5873330A

公开(公告)日：1999-02-23

申请号：US777025

申请日：1996-12-30

申请人： Masanori Takahashi ,  Hitoshi Watanabe

发明人： Masanori Takahashi ,  Hitoshi Watanabe

IPC分类号： F01P3/02 ,  F01N3/04 ,  F01N13/12 ,  F01P3/20 ,  F01P7/14 ,  F01P7/16 ,  F02B61/04 ,  F02B75/18 ,  F02B75/20 ,  F02F1/10 ,  F01P3/12

CPC分类号： F01N13/12 ,  F01N3/043 ,  F01P3/202 ,  F02B61/045 ,  F02B75/20 ,  F02F1/108 ,  F01P2050/04 ,  F01P2060/16 ,  F01P7/16 ,  F02B2075/1816 ,  F02B2275/18 ,  Y02T10/20

摘要： A coolant system for a vertically oriented engine of an outboard motor is disclosed. Coolant flows through the coolant system from a coolant pump into a coolant jacket surrounding an exhaust manifold of the engine, down to a bottom of a cylinder head of the engine, through the cylinder head an engine block, through a thermostat, and then to a jacket positioned along an exhaust pipe leading from the exhaust manifold, to a coolant discharge.

摘要翻译： 公开了一种用于舷外马达的垂直定向发动机的冷却剂系统。 冷却剂通过冷却剂系统从冷却剂泵流入围绕发动机的排气歧管的冷却剂套管，直到发动机的气缸盖的底部，通过气缸盖，发动机缸体，通过恒温器，然后到达 护套沿着从排气歧管引出的排气管定位到冷却剂排出口。

公开(公告)号：US5830612A

公开(公告)日：1998-11-03

申请号：US711935

申请日：1996-09-11

申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

公开(公告)号：US5823835A

公开(公告)日：1998-10-20

申请号：US819595

申请日：1997-03-17

申请人： Masanori Takahashi ,  Hiroshi Oishi ,  Hitoshi Watanabe

发明人： Masanori Takahashi ,  Hiroshi Oishi ,  Hitoshi Watanabe

IPC分类号： B63H20/02 ,  B63H21/22 ,  F01P3/20 ,  F01P11/18 ,  F02B1/04 ,  F02B61/04 ,  F02B67/00 ,  F02B75/02 ,  F02B75/18 ,  F02B75/20 ,  B63H20/00

CPC分类号： F01P11/18 ,  B63H21/213 ,  F02B61/045 ,  F02B75/20 ,  F01P2050/12 ,  F01P3/202 ,  F02B1/04 ,  F02B2075/027 ,  F02B2075/1816

摘要： In accordance with the present invention there is provided an outboard motor for use in powering a watercraft of the type having an operator station positioned along a starboard side of the watercraft. The motor has a water propulsion device powered by an engine having an exhaust system generally positioned along a right side thereof. A cooling system is provided for cooling the engine and the exhaust system. Preferably, the motor includes a cooling water tell-tale acting as a visual identifier to the operator of the craft that the cooling system for the engine is operating. The tell-tale is created by diverting coolant from a portion of the cooling system for cooling the exhaust system to a pilot port in the side of the cowling corresponding to the starboard side of the watercraft. In addition, the motor preferably includes a throttle control and shift control which extend along the right side of the engine through the cowling to the operator station in the watercraft. The throttle control is connected via a linkage extending to the opposite side of the engine to an intake throttle, while the shift control is connected via a linkage to a transmission control.

摘要翻译： 根据本发明，提供了一种舷外马达，用于为具有沿着船只右舷定位的操作员站的类型的船舶供电。 电动机具有由具有通常沿其右侧定位的排气系统的发动机供电的水推进装置。 提供冷却系统以冷却发动机和排气系统。 优选地，电动机包括作为用于发动机的冷却系统运行的工艺的操作者的视觉标识符的冷却水指示器。 通过将冷却剂从冷却系统的一部分转向用于将排气系统冷却到对应于船只的右舷侧的整流罩侧面的先导端口来产生说明。 此外，电动机优选地包括节气门控制和变速控制，其沿着发动机的右侧通过整流罩延伸到船舶中的操作员站。 节气门控制通过延伸到发动机的相对侧的联动器连接到进气节气门，而变速控制通过联动连接到变速器控制。

公开(公告)号：US5719416A

公开(公告)日：1998-02-17

申请号：US276805

申请日：1994-07-18

申请人： Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Carlos A. Paz De Araujo ,  Shuzo Hiraide ,  Takashi Mihara ,  Larry D. McMillan

发明人： Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Carlos A. Paz De Araujo ,  Shuzo Hiraide ,  Takashi Mihara ,  Larry D. McMillan

IPC分类号： C23C18/12 ,  C30B7/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  C23C16/45561 ,  C30B29/68 ,  C30B7/00 ,  H01L21/31691 ,  H01L27/10805 ,  H01L28/56 ,  H01L28/60 ,  H01L28/55

摘要： A method of fabricating a ferroelectric or layered superlattice DRAM compatible with conventional silicon CMOS technology. A MOSFET is formed on a silicon substrate. A thick layer of BPSG followed by a thin SOG layer overlies the MOSFET. A capacitor is formed by depositing a layer of platinum, annealing, depositing an intermediate layer comprising a ferroelectric or layer superlattice material, annealing, depositing a second layer of platinum, then patterning the capacitor. Another SOG layer is deposited, contact holes to the MOSFET and capacitor are partially opened, the SOG is annealed, the contact holes are completely opened, and a Pt/Ti/PtSi wiring layer is deposited.

摘要翻译： 制造与常规硅CMOS技术兼容的铁电或分层超晶格DRAM的方法。 在硅衬底上形成MOSFET。 厚层的BPSG后面是薄的SOG层覆盖在MOSFET上。 通过沉积铂层，退火，沉积包含铁电体或层超晶格材料的中间层，退火，沉积第二层铂，然后构图电容器，形成电容器。 沉积另一个SOG层，MOSFET和电容器的接触孔部分打开，SOG退火，接触孔完全打开，并沉积Pt / Ti / PtSi布线层。

公开(公告)号：US5713772A

公开(公告)日：1998-02-03

申请号：US693390

申请日：1996-08-07

申请人： Masanori Takahashi ,  Hitoshi Watanabe

发明人： Masanori Takahashi ,  Hitoshi Watanabe

IPC分类号： B63H20/28 ,  F01P1/06 ,  F01P3/20 ,  F01P5/02 ,  F02B61/04 ,  F02B67/00 ,  F02B67/06 ,  F02B75/02 ,  F02B75/18 ,  F02B75/20 ,  F02B77/00 ,  F02B77/11 ,  F02M35/16 ,  B63H21/24

CPC分类号： F01P3/202 ,  F01P1/06 ,  F02B61/045 ,  F02B75/20 ,  F01P5/02 ,  F02B2075/027 ,  F02B2075/1816 ,  F02B67/06

摘要： A number of embodiments of four-cycle internal combustion engines having belt-driven overhead cam shafts. The power head of the outboard motor includes a protective cowling that has an atmospheric air inlet and the air drawn through this atmospheric air inlet is directed over a timing belt that drives the cam shaft from the engine crankshaft for its cooling. The air flow is controlled either by utilization of fans, baffles and/or utilizing the flow of air caused by the induction system.

摘要翻译： 具有带驱动顶置凸轮轴的四冲程内燃机的许多实施例。 舷外马达的动力头包括具有大气空气入口的保护罩，并且通过该大气进气引入的空气被引导到同步带上，该同步带驱动凸轮轴从发动机曲轴进行冷却。 通过利用风扇，挡板和/或利用由感应系统引起的空气流来控制气流。

公开(公告)号：US5561307A

公开(公告)日：1996-10-01

申请号：US276474

申请日：1994-07-18

申请人： Takashi Mihara ,  Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Larry D. McMillan ,  Carlos P. De Araujo

发明人： Takashi Mihara ,  Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Larry D. McMillan ,  Carlos P. De Araujo

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76 ,  C23C14/00 ,  H01L29/94

CPC分类号： H01L27/10852 ,  H01L27/10808 ,  H01L28/60 ,  H01L28/55

摘要： An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tungsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the ferroelectric layer and the source drain. The barrier layer may act as the bottom electrode of the ferroelectric capacitor, or a separate bottom electrode made of platinum may be used. In another embodiment in which the barrier layer forms the bottom electrode, an oxide layer less than 5 nm thick is located between the barrier layer and the ferroelectric layer and the barrier layer is made of silicon, silicide, or polycide. A thin silicide layer forms and ohmic contact between the barrier layer and the source/drain. The capacitor and the barrier layer are patterned in a single mask step. The ends of the capacitor are stepped or tapered. In another embodiment both the bottom and top electrode may be made of silicon, silicide, polycide or a conductive oxide, such as indium tin oxide, tin dioxide, or ruthenium oxide.

摘要翻译： 超大型铁电电容器位于DRAM中的MOSFET源极/漏极的接触孔处。 在铁电层和源极漏极之间，由氮化钛，钛钨，钽，钛，钨，钼，铬，氧化铟锡，二氧化锡，氧化钌，硅，硅化物或多晶硅化物形成的阻挡层。 阻挡层可以用作铁电电容器的底部电极，或者可以使用由铂制成的单独的底部电极。 在其中阻挡层形成底部电极的另一个实施例中，小于5nm厚的氧化物层位于势垒层和铁电层之间，阻挡层由硅，硅化物或多硅化物制成。 薄的硅化物层在阻挡层和源极/漏极之间形成欧姆接触。 在单个掩模步骤中对电容器和阻挡层进行图案化。 电容器的端部是阶梯式或锥形的。 在另一个实施例中，底部和顶部电极可以由硅，硅化物，多晶硅或导电氧化物，例如氧化铟锡，二氧化锡或氧化钌制成。

公开(公告)号：US5487032A

公开(公告)日：1996-01-23

申请号：US338003

申请日：1994-11-10

申请人： Takashi Mihara ,  Hitoshi Watanabe ,  Hiroyuki Yoshimori ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Takashi Mihara ,  Hitoshi Watanabe ,  Hiroyuki Yoshimori ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A method and apparatus for programming ferroelectric memory cells which reduces fatigue effects of switching polarization of the ferroelectric devices associated with the memory cells such as ferroelectric capacitors and transistors. Alteration of the rise AC fall times associated with signals used to switch ferroelectric device polarization are shown to reduce fatigue of the ferroelectric material thereby increasing the useful life of ferroelectric memory cells. Slowing the rise and fall times as well as the rate of signal level rise and fall, (signal shape), are shown to reduce the fatigue effects of switching polarization of ferroelectric devices. Methods and apparatus for producing a triangular ("sawtooth") signal waveform, a Gaussian signal waveform, and a waveform having exponential rise and fall times are disclosed.

摘要翻译： 一种用于编程铁电存储器单元的方法和装置，其减少与诸如铁电电容器和晶体管之类的存储单元相关联的铁电体器件的开关极化的疲劳效应。 示出了与用于切换铁电体器件极化的信号相关联的上升AC下降时间的变化，以减少铁电材料的疲劳，从而增加铁电存储器单元的使用寿命。 降低上升和下降时间以及信号电平上升和下降（信号形状）的速率，可以减少铁电元件开关极化的疲劳效应。 公开了用于产生三角形（“锯齿”）信号波形，高斯信号波形和具有指数上升和下降时间的波形的方法和装置。

公开(公告)号：US5126804A

公开(公告)日：1992-06-30

申请号：US710366

申请日：1991-06-03

申请人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

发明人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/341

摘要： A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.