公开(公告)号：US6020223A

公开(公告)日：2000-02-01

申请号：US959590

申请日：1997-10-29

申请人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

发明人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01L21/266 ,  H01L21/336 ,  H01L27/144 ,  H01L27/146 ,  H01L29/786 ,  H01L31/0216 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/266 ,  H01L27/1443 ,  H01L27/14603 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/02162 ,  H01L31/02165 ,  Y10S438/94

摘要： A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.

公开(公告)号：US5767877A

公开(公告)日：1998-06-16

申请号：US698008

申请日：1996-08-13

申请人： Ping Mei ,  David Kalman Biegelsen ,  James Buckley Boyce

发明人： Ping Mei ,  David Kalman Biegelsen ,  James Buckley Boyce

IPC分类号： B41J2/005 ,  G03G15/34 ,  B41J2/04

CPC分类号： B41J2/005 ,  G03G15/344 ,  G03G2215/0167 ,  G03G2217/0008

摘要： A toner jet printer and method of use for printing images by manipulating individual toner particles using two-dimensional print cell arrays built by micro electro mechanical systems (MEMS) technologies. Toner particles are positioned by aerodynamic forces controlled by microvalves within each print cell by either selective or nonselective filling. If selectively filled, each cell is then heated or subjected to an aerodynamic force to eject the toner particles onto a paper substrate. If non-selectively filled, only those print cells corresponding to an intended image are addressed electronically to eject a toner particle from an addressed cell by aerodynamic forces controlled by valve actuation or by heating the print cell. Single color or multiple color printing can be achieved using the same cell array.

摘要翻译： 一种调色剂喷墨打印机和通过使用由微机电系统（MEMS）技术构建的二维打印单元阵列操纵单个调色剂颗粒来打印图像的方法。 调色剂颗粒通过选择性或非选择性填充在每个印刷电池内由微型阀控制的空气动力定位。 如果选择性地填充，则每个电池然后被加热或经受空气动力以将调色剂颗粒喷射到纸基材上。 如果未选择性地填充，则只有那些对应于预期图像的印刷单元被电子地寻址，以便通过由气门致动控制的空气动力或通过加热印刷单元从寻址的单元排出调色剂颗粒。 可以使用相同的单元阵列实现单色或多色打印。

公开(公告)号：US5733641A

公开(公告)日：1998-03-31

申请号：US656460

申请日：1996-05-31

申请人： David K. Fork ,  James B. Boyce ,  Ping Mei ,  Steve Ready ,  Richard I. Johnson ,  Greg B. Anderson

发明人： David K. Fork ,  James B. Boyce ,  Ping Mei ,  Steve Ready ,  Richard I. Johnson ,  Greg B. Anderson

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  B32B15/00

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  Y10S438/967 ,  Y10T428/24479 ,  Y10T428/24926 ,  Y10T428/265

摘要： The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.

摘要翻译： 本发明提供一种缓冲衬底，其包括衬底，缓冲层和硅层。 缓冲层设置在基板和硅层之间。 缓冲层的熔点高于基板的熔点。 通过使用激光束使硅层结晶来形成多晶硅层。

公开(公告)号：US20070117278A1

公开(公告)日：2007-05-24

申请号：US11285879

申请日：2005-11-23

申请人： Craig Perlov ,  Ping Mei

发明人： Craig Perlov ,  Ping Mei

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method of forming a thin film device on a flexible substrate is disclosed. The method includes depositing an imprintable material over the flexible substrate. The imprintable are stamped material forming a three-dimensional pattern in the imprintable material. A sacrificial layer is formed over the three-dimensional pattern. A conductive layer is deposited over the sacrificial layer. The sacrificial layer is removed, leaving portions of the conductive layer as defined by the three-dimensional pattern.

摘要翻译： 公开了一种在柔性基板上形成薄膜器件的方法。 该方法包括将可压印材料沉积在柔性基底上。 可压印的是在可压印材料中形成三维图案的冲压材料。 在三维图案上形成牺牲层。 在牺牲层上沉积导电层。 去除牺牲层，使得由三维图案限定的部分导电层。

公开(公告)号：US20070096169A1

公开(公告)日：2007-05-03

申请号：US11264321

申请日：2005-11-01

申请人： Ping Mei ,  Hao Luo ,  Carl Taussig

发明人： Ping Mei ,  Hao Luo ,  Carl Taussig

IPC分类号： H01L29/80

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D structure is then provided upon the functional material, the 3D structure having a plurality of different heights, at least one height defining a first portion of the conductive strips to be bundled. The 3D structure and functional material are then etched to define a TFD disposed above the first portion of the conductive strips. The first portion of the conductive strips is bundled adjacent to the TFD.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，描述了逆变器薄膜器件的制造。 此外，在基板上设置平行隔开的导电条。 功能材料沉积在导电条上。 然后在功能材料上提供3D结构，3D结构具有多个不同的高度，限定要捆扎的导电条的第一部分的至少一个高度。 然后蚀刻3D结构和功能材料以限定设置在导电条的第一部分之上的TFD。 导电条的第一部分与TFD相邻捆扎。

公开(公告)号：US20050170639A1

公开(公告)日：2005-08-04

申请号：US10769127

申请日：2004-01-30

申请人： Ping Mei

发明人： Ping Mei

IPC分类号： B81C99/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8239 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L21/4763 ,  B28B1/00 ,  H01L21/20 ,  H01L21/44 ,  H01L21/46

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/308 ,  H01L21/32139 ,  H01L27/10 ,  H01L27/105 ,  H01L27/1052

摘要： The present invention includes a method and system for forming a semiconductor device. Varying embodiments generate 2 dimensional alignment features in a device by implementing a 3-dimensional pattern into an underlying device substrate. Accordingly, alignments between successive device patterning steps can be determined regardless of the dilations or contractions that can take place during the device fabrication process. A first aspect of the present invention is a method for forming a semiconductor device. The method includes forming a 3-dimensional pattern in a substrate and depositing at least one material over the substrate in accordance with desired characteristics of the semiconductor device.

摘要翻译： 本发明包括用于形成半导体器件的方法和系统。 不同的实施例通过将3维图案实施到下面的器件衬底中而在器件中产生二维对准特征。 因此，可以确定连续的器件构图步骤之间的对准，而不管在器件制造过程中可能发生的膨胀或收缩。 本发明的第一方面是形成半导体器件的方法。 该方法包括在衬底中形成3维图案并根据半导体器件的期望特性在衬底上沉积至少一种材料。

公开(公告)号：US06861365B2

公开(公告)日：2005-03-01

申请号：US10184567

申请日：2002-06-28

申请人： Carl Phillip Taussig ,  Ping Mei

发明人： Carl Phillip Taussig ,  Ping Mei

IPC分类号： B41C3/00 ,  B81C1/00 ,  B81C99/00 ,  G03F7/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/302 ,  H01L21/308 ,  H01L21/311 ,  H01L51/40

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0273 ,  H01L21/0334 ,  H01L21/0335 ,  H01L21/3085

摘要： A method and system for forming a semiconductor device is provided. The method and system involves the utilization of a stamping tool to generate three-dimensional resist structures whereby thin film patterning steps can be transferred to the resist in a single molding step and subsequently revealed in later processing steps. Accordingly, the alignments between successive patterning steps can be determined by the accuracy with which the stamping tool has been fabricated, regardless of the dilations or contractions that can take place during the fabrication process.

摘要翻译： 提供一种用于形成半导体器件的方法和系统。 该方法和系统涉及使用冲压工具来生成三维抗蚀剂结构，由此薄膜构图步骤可以在单个模制步骤中转移到抗蚀剂中，并随后在稍后的处理步骤中显露。 因此，连续图案化步骤之间的对准可以通过制造冲压工具的精度来确定，而不管制造过程中可能发生的膨胀或收缩。

公开(公告)号：US06288435B1

公开(公告)日：2001-09-11

申请号：US09473578

申请日：1999-12-28

申请人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Jeng Ping Lu ,  Francesco Lemmi ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01L31075

CPC分类号： H01L27/14603 ,  H01L27/14665

摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.

摘要翻译： 描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。 通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。 消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域​​作为金属背接触和本征非晶硅层之间的缓冲区。 消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂的非晶硅层。

公开(公告)号：US06288417B1

公开(公告)日：2001-09-11

申请号：US09226114

申请日：1999-01-07

申请人： Norbert H. Nickel ,  Christian G. Van de Walle ,  David P. Bour ,  Ping Mei

发明人： Norbert H. Nickel ,  Christian G. Van de Walle ,  David P. Bour ,  Ping Mei

IPC分类号： H01L3300

CPC分类号： H01L33/18 ,  H01L33/32

摘要： Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase crystallizing amorphous material or by directly depositing polycrystalline material on the substrates. The polycrystalline GaN material can be incorporated in light-emitting devices such as light-emitting diodes (LEDs). LED arrays can be formed on large-area substrates to provide large-area, full-color active-matrix displays.

摘要翻译： 多晶III族氮化物半导体材料如GaN和GaN和其他III族氮化物的合金作为层沉积在多晶和非晶体衬底上。 多晶GaN层可以通过固相结晶的非晶材料或通过在基片上直接沉积多晶材料来形成。 多晶GaN材料可以结合在诸如发光二极管（LED）的发光器件中。 LED阵列可以形成在大面积基板上，以提供大面积的全色有源矩阵显示器。

公开(公告)号：US06252215B1

公开(公告)日：2001-06-26

申请号：US09069053

申请日：1998-04-28

申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01J4014

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H04N5/3741

摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.

摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供栅极线和驱动电压线同步。