公开(公告)号：US08048112B2

公开(公告)日：2011-11-01

申请号：US10659302

申请日：2003-09-11

申请人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

发明人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

IPC分类号： A61B17/70

CPC分类号： A61B17/7062 ,  A61B17/7005 ,  A61B17/7011 ,  A61B17/7032 ,  A61B17/7037 ,  A61B17/7047 ,  A61B17/7056 ,  A61B2017/00858

摘要： The fixing apparatus includes a pressure fixing device to pressure fix a rod to a circular arc rod engagement portion, and small protruding portions that bite into the rod and have an acute angle in both end sides of the rod engagement portion outside of the pressure fixing device. A recess surface of the circular arc rod engagement portion between the small protruding portions is formed as a rough surface.

摘要翻译： 定影装置包括：压力固定装置，用于将杆压力固定到圆弧杆接合部分，以及小的突出部分，其在压力固定装置外部的杆接合部分的两端侧咬入棒中并具有锐角 。 小突起部之间的圆弧棒接合部的凹部形成为粗糙面。

公开(公告)号：US20080053816A1

公开(公告)日：2008-03-06

申请号：US11843372

申请日：2007-08-22

申请人： Nobumasa Suzuki ,  Hideo Kitagawa

发明人： Nobumasa Suzuki ,  Hideo Kitagawa

IPC分类号： H05F3/00 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.

摘要翻译： 等离子体处理装置包括等离子体处理室和微波源。 通过具有内弧形槽和外弧形槽的开槽环形波导将微波引入处理室。 内弧形槽和外弧形槽的中心线之间的距离被设定为沿室的电介质窗表面传播的微波表面波的半波​​长的偶数倍。 将外弧形槽的中心线与电介质窗的外周之间的距离设定为微波表面波的半波​​长的奇数倍。

公开(公告)号：US06916678B2

公开(公告)日：2005-07-12

申请号：US10701431

申请日：2003-11-06

申请人： Hideo Kitagawa ,  Nobumasa Suzuki ,  Shinzo Uchiyama

发明人： Hideo Kitagawa ,  Nobumasa Suzuki ,  Shinzo Uchiyama

IPC分类号： C08J7/00 ,  H01J37/32 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L21/00

CPC分类号： H01L21/0234 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

摘要翻译： 通过利用等离子体对待处理的基板的表面进行改性的方法包括以下步骤：将基板的温度从200℃调节至400℃，引入包括氮原子的气体或包括惰性气体的混合气体，以及 包括氮原子的气体进入等离子体处理室，调节等离子体处理室中的压力高于13.3Pa，在等离子体处理室中产生等离子体，并将等离子体中等于或小于10eV的离子注入待处理的基板中。

公开(公告)号：US20050005854A1

公开(公告)日：2005-01-13

申请号：US10870067

申请日：2004-06-18

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/32192 ,  C23C16/345 ,  C23C16/402 ,  C23C16/511

摘要： A surface wave plasma treatment apparatus according to the present invention is a surface wave plasma treatment apparatus composed of a plasma treatment chamber including a part where the chamber is formed as a dielectric window capable of transmitting a microwave, a supporting body of a substrate to be treated, the supporting body set in the plasma treatment chamber, a plasma treatment gas introducing unit for introducing a plasma treatment gas into the plasma treatment chamber, an exhaust unit for evacuating an inside of the plasma treatment chamber, and a microwave introducing unit using a multi-slot antenna arranged on an outside of the dielectric window to be opposed to the supporting unit of the substrate to be treated, wherein slots arranged radially and slots arranged annularly are combined as slots.

摘要翻译： 根据本发明的表面波等离子体处理装置是由等离子体处理室构成的表面波等离子体处理装置，该等离子体处理室包括：室，其形成为能够传输微波的电介质窗口，基板的支撑体为 设置在等离子体处理室中的支撑体，用于将等离子体处理气体引入等离子体处理室的等离子体处理气体引入单元，用于抽出等离子体处理室内部的排气单元，以及使用 多槽天线布置在电介质窗口的外侧上，与要处理的基板的支撑单元相对，其中径向布置的狭槽和环形的槽组合成槽。

公开(公告)号：US06650678B1

公开(公告)日：2003-11-18

申请号：US09512075

申请日：2000-02-24

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： A01S3097

CPC分类号： H01S3/0315 ,  G03F7/70383 ,  H01S3/0385 ,  H01S3/0975 ,  H01S3/225

摘要： A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube (2) by introducing electromagnetic waves into the laser tube through a plurality of slots (10) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode (13) is placed near the slot (10). By giving a predetermined current density to the electrode (13), the intensity distribution of light generated from the laser gas above the slot (10) is controlled.

摘要翻译： 等离子体在每个槽的长度上作为整体被均匀地激发。 激光振荡装置被设计成通过在波导壁中形成的多个槽（10）将电磁波引入到激光管中来激发激光管（2）中的激光气体，并通过使从 激光气体。 至少一个电极（13）放置在槽（10）附近。 通过向电极（13）施加预定的电流密度，控制从狭槽（10）上方的激光气体产生的光的强度分布。

公开(公告)号：US06541982B2

公开(公告)日：2003-04-01

申请号：US09760667

申请日：2001-01-17

申请人： Hideo Kitagawa ,  Nobumasa Suzuki

发明人： Hideo Kitagawa ,  Nobumasa Suzuki

IPC分类号： G01N2762

CPC分类号： G01R19/0061 ,  H05H1/0062

摘要： A plasma density measuring method which includes producing a surface wave at an interface between a dielectric member and a plasma, and measuring at least one of a plasma density and a relative change in plasma density, on the basis of the surface wave. A plasma processing system including a container having a window, and for storing therein a gas introduced thereinto, a dielectric member for closing the window of the container, a plasma voltage source for applying a high frequency voltage through the dielectric member to produce a plasma by use of the gas inside the container, wherein a predetermined process is performed by use of the thus produced plasma, a detecting system for detecting an electric field intensity distribution of a surface wave propagated through the dielectric member, and a feedback system for feeding back the result of detection by the detecting system, to determine a processing condition for the process.

摘要翻译： 一种等离子体密度测量方法，其包括在介电构件和等离子体之间的界面处产生表面波，并且基于表面波测量等离子体密度和等离子体密度的相对变化中的至少一个。 一种等离子体处理系统，包括具有窗口的容器，并且其中存储有引入其中的气体，用于封闭容器窗口的电介质构件，用于通过电介质构件施加高频电压以产生等离子体的等离子体电压源 使用容器内部的气体，其中通过使用由此产生的等离子体执行预定处理，用于检测通过电介质构件传播的表面波的电场强度分布的检测系统，以及用于反馈 由检测系统检测的结果，以确定该过程的处理条件。

公开(公告)号：US6080679A

公开(公告)日：2000-06-27

申请号：US81021

申请日：1998-05-19

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23C14/00 ,  C23C14/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  F16G5/00

CPC分类号： H01J37/32834 ,  C23C14/564 ,  C23C16/4401

摘要： A process for evacuating the inside of a vacuum vessel before a processing gas is introduced into the vacuum vessel. The process includes steps of evacuating the inside of the vacuum vessel through a by-pass evacuation path such that a pressure reduction rate of the pressure inside the vacuum vessel is gradually reduced immediately after the start of evacuation, and opening an evacuation conductance control valve, provided in a principal evacuation path, during or after the evacuation step such that conductance of the evacuation conductance control valve is gradually increased with an elapse of evacuation time. The timing at which the evacuation conductance control valve is started to be opened is controlled so that a pressure reduction rate curve of the pressure inside the vacuum vessel has a minimum value and a maximum value. The minimum value becomes 0.2 times or more a value given immediately after the start of evacuation and the maximum value becomes not greater than the value given immediately after the start of evacuation.

摘要翻译： 在将处理气体引入真空容器之前，将真空容器内部排出的方法。 该方法包括以下步骤：通过旁路抽空路径对真空容器的内部进行排气，使真空容器内的压力的减压速度在排气开始后立即逐渐降低，并且打开排气导管控制阀， 设置在主排空路径中，在抽空步骤期间或之后，使得排气导管控制阀的电导随着撤离时间逐渐增加。 控制排气导通控制阀开始打开的时间，使得真空容器内的压力的减压率曲线具有最小值和最大值。 最小值变为在撤离开始后立即给出的值的0.2倍以上，最大值不大于撤离开始后立即给出的值。

公开(公告)号：US5985091A

公开(公告)日：1999-11-16

申请号：US714445

申请日：1996-09-16

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32688

摘要： A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.

摘要翻译： 微波等离子体处理装置包括等离子体生成室，与等离子体生成室连通的处理室，配置在处理室中的被处理基板的支撑体，配置在等离子体生成室周围的槽的圆形波导管，以及磁场 用于在等离子体产生室中产生尖点磁场的发生单元。 提供了使用该装置的微波等离子体处理方法，即使在低温下，甚至在压力为1毫托的低压区域中也能维持高密度和大面积均匀的等离子体。

公开(公告)号：US5983829A

公开(公告)日：1999-11-16

申请号：US739212

申请日：1996-10-29

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32706

摘要： A plasma process apparatus comprises a plasma process chamber, substrate-to-be-processed supporting means for supporting a substrate to be processed, provided in the process chamber, gas introducing means, gas evacuation means, microwave introducing means using an endless circular waveguide having a plurality of slots arranged around the process chamber, and radio frequency power supplying means for supplying radio frequency power to the substrate supporting means. The above arrangement permits a uniform plasma to be generated in high density and in a large area even under the low-pressure condition of about 1 mTorr without using a magnetic field, thus enabling etching of large-area substrates in super fine patterns and at high speed.

摘要翻译： 等离子体处理装置包括等离子体处理室，用于支撑处理室中设置的待处理基板的待处理基板支撑装置，气体引入装置，排气装置，使用环形圆形波导的微波引入装置， 设置在处理室周围的多个槽，以及用于向基板支撑装置提供射频功率的射频电力供给装置。 上述结构允许在不使用磁场的情况下即使在约1mTorr的低压条件下也能够以高密度和大面积产生均匀的等离子体，从而能够以超细图案和高度蚀刻大面积基板 速度。

公开(公告)号：US5753320A

公开(公告)日：1998-05-19

申请号：US471158

申请日：1995-06-06

申请人： Nobuo Mikoshiba ,  Tadahiro Ohmi ,  Kazuo Tsubouchi ,  Kazuya Masu ,  Nobumasa Suzuki

发明人： Nobuo Mikoshiba ,  Tadahiro Ohmi ,  Kazuo Tsubouchi ,  Kazuya Masu ,  Nobumasa Suzuki

IPC分类号： H01L21/205 ,  C23C16/452 ,  C23C16/48 ,  C23C16/50 ,  H01L21/263 ,  H01L21/31 ,  H05H1/00

CPC分类号： C23C16/452 ,  C23C16/48 ,  C23C16/482

摘要： A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

摘要翻译： 根据化学气相沉积法在基板上形成沉积膜的方法包括预先形成含有成为构成所述沉积膜的成分的原子的气相化合物的激发物质，将激发的物质供应到所述基板的表面上并实现光照射 在所述基板表面上，由此通过表面反应形成沉积膜。