公开(公告)号：US09029880B2

公开(公告)日：2015-05-12

申请号：US13842793

申请日：2013-03-15

Applicant: LuxVue Technology Corporation

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L27/12

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area.

公开(公告)号：US08941215B2

公开(公告)日：2015-01-27

申请号：US13711554

申请日：2012-12-11

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson

IPC: H01L23/50 ,  H01L23/00

CPC classification number: H01L24/06 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/7598 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列形成在由热固性材料形成的稳定柱阵列上。 每个微型装置包括比直接在底面下面的相应稳定柱更宽的底表面。

公开(公告)号：US08928021B1

公开(公告)日：2015-01-06

申请号：US13920925

申请日：2013-06-18

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Kelly McGroddy

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/08

CPC classification number: H01L24/73 ,  G02B6/0096 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/14 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device, a light pipe around the micro LED device to cause internal reflection of incident light from the micro LED device within the light pipe, and a wavelength conversion layer comprising phosphor particles over the light pipe. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

Abstract translation: 描述了一种发光器件及其制造方法。 在一个实施例中，发光器件包括微型LED器件，微型LED器件周围的光管，以引起来自光管内的微型LED器件的入射光的内部反射，以及包括光上的荧光体粒子的波长转换层 管。 示例性荧光体颗粒包括由于其尺寸而显示发光的量子点或由于其组成而显示发光的颗粒。

公开(公告)号：US20140241844A1

公开(公告)日：2014-08-28

申请号：US13776188

申请日：2013-02-25

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl ,  Paul Argus Parks ,  Stephen Paul Bathurst

IPC: B25J11/00 ,  B25J15/00

CPC classification number: B25J11/00 ,  B25J7/00 ,  B25J9/0015 ,  B25J15/0052 ,  B25J15/0085 ,  H01L24/75 ,  H01L2224/7598

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool manipulator assembly allows active alignment between an array of electrostatic transfer heads on a micro pick up array and an array of micro devices on a carrier substrate. Displacement of a compliant element of the mass transfer tool manipulator assembly may be sensed to control alignment between the array of electrostatic transfer heads and the array of micro devices.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，质量传递工具操纵器组件允许在微拾取阵列上的静电转印头阵列和载体衬底上的微器件阵列之间的主动对准。 可以检测质量传递工具操纵器组件的柔性元件的位移，以控制静电转印头阵列与微器件阵列之间的对准。

公开(公告)号：US20140209248A1

公开(公告)日：2014-07-31

申请号：US14221071

申请日：2014-03-20

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: B32B38/18

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US20140159065A1

公开(公告)日：2014-06-12

申请号：US13754717

申请日：2013-01-30

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Hsin-Hua Hu ,  Andreas Bibl

IPC: H01L33/08 ,  H01L33/48

CPC classification number: H01L33/48 ,  B81C99/002 ,  H01L21/56 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L33/0079 ,  H01L2224/16225 ,  H01L2224/7598 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/81

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is held within an array of staging cavities on a carrier substrate. Each micro device is laterally surrounded by sidewalls of a corresponding staging cavity.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列被保持在载体衬底上的分级腔阵列内。 每个微器件由相应的分级腔的侧壁横向包围。

公开(公告)号：US08552436B2

公开(公告)日：2013-10-08

申请号：US13708695

申请日：2012-12-07

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L27/15 ,  H01L29/18 ,  H01L23/02 ,  H01L21/00

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：US08518204B2

公开(公告)日：2013-08-27

申请号：US13436314

申请日：2012-03-30

Applicant: Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

IPC: B29C65/02 ,  B29C65/48 ,  B32B37/04 ,  B32B39/00 ,  B32B43/00

CPC classification number: H01L24/83 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/95 ,  H01L33/0079 ,  H01L33/46 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y10T156/1153 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。

公开(公告)号：US20130126098A1

公开(公告)日：2013-05-23

申请号：US13708686

申请日：2012-12-07

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: B32B38/18

CPC classification number: H01L29/167 ,  B32B38/18 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2933/0066 ,  Y10T156/1153 ,  Y10T156/17 ,  Y10T156/1705 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  Y10T156/1911 ,  H01L2224/83 ,  H01L2924/00

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

Abstract translation: 公开了一种传送微型装置和微型装置阵列的方法。 承载连接到接合层的微型器件的载体衬底被加热到低于接合层的液相线温度的温度，并且转移头被加热到高于接合层的液相线温度的温度。 当微型装置与转印头接触时，来自转印头的热量转移到粘结层中以至少部分地熔化粘结层。 施加到转印头的电压产生从载体衬底拾取微器件的夹持力。

公开(公告)号：US08415771B1

公开(公告)日：2013-04-09

申请号：US13481592

申请日：2012-05-25

Applicant: Dariusz Golda ,  Andreas Bibl

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/66 ,  H01L21/683

CPC classification number: B81C99/0025 ,  B81C2201/0194 ,  H01L21/67144 ,  H01L24/75 ,  H01L2224/7598

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。