公开(公告)号：US20230260751A1

公开(公告)日：2023-08-17

申请号：US18003086

申请日：2021-05-28

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Jinrong ZHAO ,  Ying ZHANG ,  Xing CHEN ,  Gang WEI ,  Chen NIU ,  Jinji XU ,  Song WANG

IPC: H01J37/32 ,  H01F5/04

CPC classification number: H01J37/3211 ,  H01F5/04 ,  H01J2237/3343

Abstract: A coil structure includes a coil set including a first coil and a second coil. The first coil and the second coil are wound to form an annular area. A first end of the first coil and a first end of the second coil are close to an inner ring of the annular area. A second end of the first coil and a second end of the second coil are close to an outer ring of the annular area. The first end of the first coil is electrically connected to the first end of the second coil. A first projection-of the first coil on a plane perpendicular to an axial direction of the coil structure and a second projection of the second coil on the plane are mirror-symmetrical to each other.

公开(公告)号：US20230253184A1

公开(公告)日：2023-08-10

申请号：US18010194

申请日：2021-11-02

Applicant: Lam Research Corporation

Inventor： Alexei M. Marakhtanov ,  Felix Leib Kozakevich ,  Bing Ji ,  John P. Holland

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H03H7/38 ,  H01J2237/3343

Abstract: An impedance match housing is described. The impedance match housing includes an impedance matching circuit having an input that is coupled to a radio frequency (RF) generator. The impedance matching circuit has an output that is coupled to a first RF strap. The impedance match housing includes a uniformity control circuit coupled in parallel to a portion of the first RF strap to modify uniformity in a processing rate of a substrate when the substrate is processed within a plasma chamber.

公开(公告)号：US09997366B2

公开(公告)日：2018-06-12

申请号：US15726120

申请日：2017-10-05

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Hua Xiang ,  Wenbing Hu ,  Qing Xu ,  Qian Fu

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/02 ,  C01B21/068 ,  C01B33/113

CPC classification number: H01L21/3065 ,  C01B21/068 ,  C01B33/113 ,  H01J37/321 ,  H01J2237/3343 ,  H01L21/02019 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/11575

Abstract: A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. The gas is formed into an in-situ plasma in the etch chamber. A bias of about 10 to about 100 volts is provided to accelerate helium ions to the stack and activate a surface of the stack to form an activated surface for ion-assisted etching, wherein the in-situ plasma etches the activated surface of the stack.

公开(公告)号：US09953886B2

公开(公告)日：2018-04-24

申请号：US15242051

申请日：2016-08-19

Applicant: Microchip Technology Incorporated

Inventor： Justin Hiroki Sato ,  Brian Dee Hennes ,  Yannick Carll Kimmel

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/12 ,  H01J37/32935 ,  H01J37/32963 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/02164 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3081

Abstract: The present disclosure relates to semiconductor manufacturing, in particular to a real-time method for qualifying the etch rate for plasma etch processes. A method for testing a semiconductor plasma etch chamber may include: depositing a film on a substrate of a wafer, the wafer including a center region and an edge region; depositing photoresist on top of the film in a pattern that isolates the center region from the edge region of the wafer; and performing an etch process on the wafer that includes at least three process steps. The three process steps may include: etching the film in any areas without photoresist covering the areas until a first clear endpoint signal is achieved; performing an in-situ ash to remove any photoresist; and etching the film in any areas exposed by the removal of the photoresist until a second clear endpoint is achieved. The method may further include determining whether both endpoints are achieved within respective previously set tolerances, and, if both endpoints are achieved within the previously set tolerance, qualifying the plasma etch chamber as verified.

公开(公告)号：US20170229327A1

公开(公告)日：2017-08-10

申请号：US15497992

申请日：2017-04-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  H01J37/32 ,  C23C4/10 ,  C23C4/134 ,  C23C14/50 ,  C23C16/509 ,  C23C14/34 ,  C23C14/10 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/683 ,  C23C14/54

CPC classification number: H01L21/67103 ,  C23C4/10 ,  C23C4/134 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

公开(公告)号：US09646861B2

公开(公告)日：2017-05-09

申请号：US14056604

申请日：2013-10-17

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/67 ,  C23C14/54 ,  C23C16/458 ,  H01L21/683 ,  H01L21/3065 ,  H05B3/26 ,  H05B3/00 ,  C23C14/50 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.

公开(公告)号：US09570275B2

公开(公告)日：2017-02-14

申请号：US14531831

申请日：2014-11-03

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger, Jr. ,  Paul Brillhart

IPC: B05B1/14 ,  B05B1/24 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  B32B43/00

CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

公开(公告)号：US20160300741A1

公开(公告)日：2016-10-13

申请号：US15183260

申请日：2016-06-15

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/67103 ,  C23C4/10 ,  C23C4/134 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

Abstract translation: 半导体等离子体处理装置中的衬底支撑件包括以可伸缩多路复用布局布置的多个可独立控制的热区，以及用于独立地控制和加热热区的电子装置。 其中结合衬底支撑件的衬底支撑件包括静电夹持电极和温度控制的底板。 用于制造衬底支撑体的方法包括将具有热区，电源线，功率返回线和通孔的陶瓷或聚合物片粘合在一起。

公开(公告)号：US09384949B2

公开(公告)日：2016-07-05

申请号：US14455019

申请日：2014-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Neng Huang ,  Chang-Sheng Lee ,  Shen-Chieh Liu ,  Cherng-Chang Tsuei

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45589 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32834 ,  H01J2237/3323 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L21/67069

Abstract: A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.

Abstract translation: 提供了一种等离子体装置的气体流量控制方法。 气体流量控制方法包括将第一调节机构安装在气体分配板上。 气体分配板包括多个排气口，并且气体分配板的第一区域中的排气口被第一调节机构遮蔽。 气体流量控制方法还包括从气体分配板的第一未掩蔽区域中的排气口排出气体，并且将通过第一调节机构的气体排入等离子体室。 气体流量控制方法还包括产生电场以将等离子体室中的气体激发成等离子体。

公开(公告)号：US20150357209A1

公开(公告)日：2015-12-10

申请号：US14827052

申请日：2015-08-14

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/311

CPC classification number: H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract translation: 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。