公开(公告)号：US20150187981A1

公开(公告)日：2015-07-02

申请号：US14640595

申请日：2015-03-06

Applicant: First Solar, Inc.

Inventor： Bastiaan Arie Korevaar ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0021 ,  C23C14/024 ,  C23C14/0629

Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

Abstract translation: 本发明的实施例包括一种方法。 该方法包括从固体源材料制备第一蒸气，使碲化碲反应形成包含碲的第二蒸气，以及在沉积环境中在载体上沉积包含碲的涂层材料，沉积环境包括第一蒸气和第二蒸气 。 另一个实施例是系统。 该系统包括沉积室，其设置成容纳与载体流体连通的沉积环境; 设置成与沉积室流体连通的固体源材料; 和与沉积室流体连通的流体连通的碲化氢源。

公开(公告)号：US09064990B2

公开(公告)日：2015-06-23

申请号：US13706435

申请日：2012-12-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazutaka Nakamura

IPC: H01L31/0296 ,  H01L31/109 ,  H01L31/18 ,  H01L31/0328

CPC classification number: H01L31/0296 ,  H01L31/0328 ,  H01L31/109 ,  H01L31/18 ,  H01L31/1828

Abstract: An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized.

Abstract translation: 紫外线传感器具有由NiO和ZnO的固溶体构成的p型半导体层和由ZnO构成的n型半导体层，并与p型半导体层接合，使得p型半导体层的p型半导体层的一部分， 型半导体层露出。 在p型半导体层中，利用NiO和ZnO的固溶体固溶的状态，在晶粒中含有3价Ni。 通过向NiO和ZnO中添加NiOOH，可以在p型半导体层的晶粒中含有三价Ni，并烧结所得到的混合物。 因此，可以实现能够小型化的便宜的紫外线传感器，其可以在不利用外围电路的情况下容易地通过光伏电力检测紫外光的强度。

公开(公告)号：US20150171255A1

公开(公告)日：2015-06-18

申请号：US14141094

申请日：2013-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Wei-Tse HSU ,  Shih-Cheng CHANG

IPC: H01L31/0749 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/042

CPC classification number: H01L31/1828 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02557 ,  H01L21/02576 ,  H01L21/02628 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/543

Abstract: Disclosed is a solar cell including a substrate, an electrode layer disposed on the substrate, a p-type light-absorption layer disposed on the electrode layer, an n-type ZnS layer disposed on the p-type light-absorption layer, and a transparent electrode layer disposed on the n-type ZnS layer. The substrate can be immersed into an acidic solution of zinc salt, chelate, and thioacetamide, thereby forming the n-type ZnS layer on the substrate.

Abstract translation: 公开了一种太阳能电池，其包括基板，设置在基板上的电极层，设置在电极层上的p型光吸收层，设置在p型光吸收层上的n型ZnS层，以及 设置在n型ZnS层上的透明电极层。 将基材浸入锌盐，螯合物和硫代乙酰胺的酸性溶液中，从而在基材上形成n型ZnS层。

公开(公告)号：US20150096606A1

公开(公告)日：2015-04-09

申请号：US14390509

申请日：2013-04-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Nicolas Karst ,  Charles Roger

IPC: H01L31/05 ,  H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0504 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/1828 ,  Y02E10/541

Abstract: The present invention concerns a method for producing an intermediate product for obtaining a photovoltaic module comprising a plurality of solar cells, said method comprising the following steps: (a) localised deposition on a substrate (4) of a layer (7) of an Se or S material, so as to cover at least one portion (400) of the substrate, (b) deposition on this localised layer (7), of a layer (41) of conductive material, said layer coating the localised layer.

Abstract translation: 本发明涉及一种生产用于获得包含多个太阳能电池的光伏组件的中间产品的方法，所述方法包括以下步骤：（a）在Se的层（7）的基板（4）上局部沉积， 或S材料，以便覆盖所述衬底的至少一部分（400），（b）在所述局部层（7）上沉积导电材料层（41），所述层涂覆所述局部层。

公开(公告)号：US08987037B2

公开(公告)日：2015-03-24

申请号：US13841772

申请日：2013-03-15

Applicant: Electronics and Telecommunications Research Institute

Inventor： Yong-Duck Chung ,  Dae-Hyung Cho ,  Won Seok Han

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/186 ,  C23C14/5853 ,  C23C14/5866 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02614 ,  H01L31/0749 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.

Abstract translation: 太阳能电池的制造方法包括在光吸收层和窗电极层之间形成缓冲层。 形成缓冲层包括在光吸收层上沉积金属材料，在光吸收层上提供非金属材料，在光吸收层上提供包含氧原子的气体材料，并使金属材料与非金属材料反应 材料。 气体材料与金属材料和非金属材料反应，以在光吸收层上形成金属硫氧化物。

公开(公告)号：US20150079725A1

公开(公告)日：2015-03-19

申请号：US14551707

申请日：2014-11-24

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/0296

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US20150037926A1

公开(公告)日：2015-02-05

申请号：US14446285

申请日：2014-07-29

Applicant: US Nano LLC

Inventor： Anthony C. Onicha ,  Louise E. Sinks ,  Stefanie L. Weber

IPC: H01L31/18 ,  B05C3/10 ,  B05C9/10 ,  H01L31/0352

CPC classification number: H01L31/1828 ,  B01J19/0093 ,  B01J2219/00792 ,  B01J2219/00813 ,  B01J2219/00831 ,  B01J2219/00835 ,  B01J2219/00842 ,  B01J2219/00867 ,  B01J2219/00869 ,  B01J2219/00873 ,  B01J2219/00889 ,  B01J2219/00894 ,  B01J2219/00905 ,  B01J2219/00959 ,  B01J2219/00961 ,  B01J2219/0097 ,  B05C3/10 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/82 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/54 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/18 ,  Y02P70/521

Abstract: Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.

Abstract translation: 提供了纳米尺度材料合成的装置和方法，包括半导体纳米线。 前体溶液包括金属和硫族化物前体的混合试剂前体溶液和催化剂，其中这种溶液在室温下为液体。 通过将溶液流分成多个路径并使路径收敛以形成均匀的溶液来混合前体溶液。 热控制反应器接收均匀溶液以形成半导体纳米线。 各种电子，光学和感觉装置可以使用例如本文所述的半导体纳米线。

公开(公告)号：US20150031163A1

公开(公告)日：2015-01-29

申请号：US13950605

申请日：2013-07-25

Applicant: First Solar, Inc.

Inventor： Tammy Jane Lucas ,  Scott Daniel Feldman-Peabody ,  Laura Anne Clark ,  Michael Christoper Cole ,  Caroline Rae Corwine

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01B1/22 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.

Abstract translation: 提供了在薄膜光伏器件上形成背接触的方法，其包括将导电浆料涂覆在由pn结的p型吸收层（例如，包含碲化镉）所限定的表面上，并固化导电糊以形成 在由pn结的p型吸收层限定的表面上的导电涂层。 导电浆料可以包括导电材料，溶剂系统和粘合剂，使得在固化过程中，来自导电浆料的酸反应以使碲表面富集，同时铜沉积到富Te表面上。 然后酸在固化过程中基本消耗。

公开(公告)号：US08921147B2

公开(公告)日：2014-12-30

申请号：US13966663

申请日：2013-08-14

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L21/00 ,  H01L21/02 ,  C23C14/22 ,  C23C14/24 ,  H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US20140370649A1

公开(公告)日：2014-12-18

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Pawel Mrozek ,  Long Cheng

IPC: H01L31/18 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。