公开(公告)号：US12000042B2

公开(公告)日：2024-06-04

申请号：US17885810

申请日：2022-08-11

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/26 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  C23C16/56 ,  H01L21/033

CPC classification number: C23C16/45523 ,  C23C16/04 ,  C23C16/042 ,  C23C16/045 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0332 ,  H01L21/0337

Abstract: A sequential infiltration synthesis apparatus comprising:



a reaction chamber constructed and arranged to hold at least a first substrate;
a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and,
a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by:
activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber;
activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and,
activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20240150892A1

公开(公告)日：2024-05-09

申请号：US18404983

申请日：2024-01-05

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US20240068097A1

公开(公告)日：2024-02-29

申请号：US18452725

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Subir Parui ,  Werner Knaepen ,  Dieter Pierreux ,  Kelly Houben ,  Herbert Terhorst ,  Theodorus G.M. Oosterlaken ,  Angelos Karagiannis

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

公开(公告)号：US11898243B2

公开(公告)日：2024-02-13

申请号：US17113301

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

公开(公告)号：US11830730B2

公开(公告)日：2023-11-28

申请号：US15690017

申请日：2017-08-29

Applicant: ASM IP Holding B.V.

Inventor： Arjen Klaver ,  Werner Knaepen ,  Lucian Jdira ,  Gido van der Star ,  Ruslan Kvetny

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211

Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising:



supplying a first precursor into the reaction chamber for a first pulse period;
supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

公开(公告)号：US20230360905A1

公开(公告)日：2023-11-09

申请号：US18312019

申请日：2023-05-04

Applicant: ASM IP Holding, B.V.

Inventor： Werner Knaepen ,  Arjen Klaver ,  Dieter Pierreux ,  Bert Jongbloed

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0217 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45574 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method for forming a silicon-comprising layer on a substrate may comprise providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace. A repetitive deposition cycle is performed. The deposition cycle comprises a first deposition pulse and a second deposition pulse comprising a provision, into the process chamber, of a first precursor and a second precursor, respectively. The deposition cycle further comprises a first purge pulse and a second purge pulse for removing, from the process chamber, a portion of the first precursor and a portion of the second precursor, respectively. The process chamber is maintained, during the deposition cycle, at a process temperature in a range from about 400° C. to about 650° C. and at a first pressure being different from a second pressure, during the first deposition pulse and during the second deposition pulse, respectively.

公开(公告)号：US20230230833A1

公开(公告)日：2023-07-20

申请号：US18127201

申请日：2023-03-28

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Steven van Aerde ,  Bert Jongbloed ,  Kelly Houben ,  Werner Knaepen ,  Wilco Verweij

IPC: H01L21/02 ,  H10B43/27

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H10B43/27

Abstract: A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

公开(公告)号：US11694892B2

公开(公告)日：2023-07-04

申请号：US17370197

申请日：2021-07-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20230207309A1

公开(公告)日：2023-06-29

申请号：US18117729

申请日：2023-03-06

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R.A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/0228 ,  H01J37/32009 ,  H01L21/76224 ,  H01L21/02274 ,  H01L21/02178 ,  H01L21/02299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02219 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/334 ,  H01J2237/3321

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20230183856A1

公开(公告)日：2023-06-15

申请号：US18097559

申请日：2023-01-17

Applicant: ASM IP Holding B.V.

Inventor： Ivo Johannes Raaijmakers ,  Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel

IPC: C23C16/04 ,  H01L21/033 ,  C23C16/448 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  G03F7/20 ,  H01L21/02

CPC classification number: C23C16/045 ,  H01L21/0337 ,  C23C16/4485 ,  C23C16/45523 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/0332 ,  C23C16/4408 ,  C23C16/45561 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52 ,  G03F7/2004 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/0273

Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:



a reaction chamber constructed and arranged to accommodate at least one substrate;
a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;
a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;
a removal flow path to allow removal of gas from the reaction chamber;
a removal flow controller to create a gas flow in the reaction chamber to the removal flow path
when the removal flow controller is activated; and,
a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.