公开(公告)号：US11004663B2

公开(公告)日：2021-05-11

申请号：US14766666

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Amit Kumar Bansal

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  C23C16/505

Abstract: Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.

公开(公告)号：US20210111000A1

公开(公告)日：2021-04-15

申请号：US17107029

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Abdul Aziz Khaja ,  Amit Kumar Bansal ,  Kwangduk Douglas Lee ,  Xing Lin ,  Jianhua Zhou ,  Addepalli Sai Susmita ,  Juan Carlos Rocha-Alvarez

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

公开(公告)号：US10910238B2

公开(公告)日：2021-02-02

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik Alayavalli ,  Ajit Balakrishna ,  Sanjeev Baluja ,  Amit Kumar Bansal ,  Matthew James Busche ,  Juan Carlos Rocha-Alvarez ,  Swaminathan T. Srinivasan ,  Tejas Ulavi ,  Jianhua Zhou

IPC: H01L21/67 ,  H01L21/687

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

公开(公告)号：US10600624B2

公开(公告)日：2020-03-24

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Alvin Zhou ,  Amit Kumar Bansal ,  Priyanka Dash ,  Zhijun Jiang ,  Ganesh Balasubramanian ,  Qiang Ma ,  Kaushik Alayavalli ,  Yuxing Zhang ,  Daniel Hwung ,  Shawyon Jafari

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/458

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US10438860B2

公开(公告)日：2019-10-08

申请号：US15136611

申请日：2016-04-22

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha ,  Karthik Janakiraman ,  Tuan Anh Nguyen

IPC: C23C16/458 ,  H01L21/66 ,  H01L21/02 ,  H01L21/285 ,  H01L21/687 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

公开(公告)号：US10060032B2

公开(公告)日：2018-08-28

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01B11/06 ,  C23C16/52 ,  H01L21/687 ,  C23C16/509 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US09711360B2

公开(公告)日：2017-07-18

申请号：US15203032

申请日：2016-07-06

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Kwangduk Douglas Lee ,  Abdul Aziz Khaja ,  Amit Kumar Bansal ,  Bok Hoen Kim ,  Prashant Kumar Kulshreshtha

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/5096 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

公开(公告)号：US20150226540A1

公开(公告)日：2015-08-13

申请号：US14422148

申请日：2013-10-23

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik

IPC: G01B11/06 ,  C23C16/46 ,  C23C16/505 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的设备和方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。