公开(公告)号：US20240154070A1

公开(公告)日：2024-05-09

申请号：US18413011

申请日：2024-01-15

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Mingwei Zhu ,  Byung Sung Kwak ,  Hyunsung Bang ,  Liang Zhao ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: H01L33/44 ,  G02B27/01 ,  H01L21/66 ,  H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/44 ,  G02B27/0172 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/502 ,  H01L33/62 ,  G02B2027/0178 ,  H01L2933/0025

Abstract: Methods of making high-pixel-density LED structures are described. The methods may include forming a backplane substrate and a LED substrate. The backplane substrate and the LED substrate may be bonded together, and the bonded substrates may include an array of LED pixels. Each of the LED pixels may include a group of isolated subpixels. A quantum dot layer may be formed on at least one of the isolated subpixels in each of the LED pixels. The methods may further include repairing at least one defective LED pixel by forming a replacement quantum dot layer on a quantum-dot-layer-free subpixel in the defective LED pixel. The methods may also include forming a UV barrier layer on the array of LED pixels after the repairing of the at least one defective LED pixel.

公开(公告)号：US11901484B2

公开(公告)日：2024-02-13

申请号：US17345992

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mengnan Zou ,  Mingwei Zhu ,  David Masayuki Ishikawa ,  Nag Patibandla

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

公开(公告)号：US11888093B2

公开(公告)日：2024-01-30

申请号：US17389029

申请日：2021-07-29

Applicant: Applied Materials, Inc.

Inventor： Daihua Zhang ,  Yingdong Luo ,  Mingwei Zhu ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag B. Patibandla

IPC: H01L33/44 ,  H01L33/50 ,  H01L25/075 ,  H01L33/58 ,  H01L33/62 ,  H01L33/00 ,  H01L21/70 ,  H01L21/02 ,  H01L21/027 ,  H01L27/15

CPC classification number: H01L33/44 ,  H01L21/027 ,  H01L21/02104 ,  H01L21/70 ,  H01L21/707 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/00 ,  H01L33/0093 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a first color conversion layer over each of a first plurality of light emitting diodes, a second color conversion layer over each of a second plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array. The micro-LEDs of the array are configured to generate illumination of the same wavelength range, the first color conversion layer converts the illumination to light of a first color, and the second color conversion layer converts the illumination to light of a different second color.

公开(公告)号：US11843025B2

公开(公告)日：2023-12-12

申请号：US17670374

申请日：2022-02-11

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Sivapackia Ganapathiappan ,  Boyi Fu ,  Hou T. Ng ,  Nag B. Patibandla

IPC: H01L21/683 ,  H01L21/66 ,  H01L27/15 ,  H01L33/00 ,  H01L23/00 ,  H01L33/48 ,  H01L25/075

CPC classification number: H01L27/156 ,  H01L21/6835 ,  H01L22/22 ,  H01L24/741 ,  H01L24/83 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/48 ,  H01L22/20 ,  H01L24/75 ,  H01L25/0753 ,  H01L2221/68368 ,  H01L2224/7598 ,  H01L2224/95136

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

公开(公告)号：US11802349B2

公开(公告)日：2023-10-31

申请号：US17016614

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Yong Cao ,  Shumao Zhang ,  Zhebo Chen ,  Jean Lu ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: C23C14/58 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  C30B23/00 ,  C30B29/40 ,  C30B33/04

CPC classification number: C30B23/002 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/54 ,  C23C14/5833 ,  C30B29/403 ,  C30B33/04

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US20230290909A1

公开(公告)日：2023-09-14

申请号：US18182856

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Li ,  Mingwei Zhu ,  Hou T. Ng ,  Nag Patibandla ,  Lisong Xu ,  Kai Ding ,  Sivapackia Ganapathiappan

IPC: H01L33/50 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L33/005 ,  H01L25/0753 ,  H01L2933/0041

Abstract: Exemplary pixel structures are described that include a first light emitting diode structure, operable to generate blue light characterized by a peak emission wavelength of greater than or about 450 nm, and a second light emitting diode structure positioned on the first light emitting diode structure. The second light emitting diode structure is operable to generate ultraviolet light characterized by a peak emission wavelength of less than or about 380 nm. The pixel structures may also include a photoluminescent region, containing a photoluminescent material, that is positioned on the second light emitting diode structure.

公开(公告)号：US11653576B2

公开(公告)日：2023-05-16

申请号：US17163274

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: H01L39/12 ,  G02B6/10 ,  G01J1/44

CPC classification number: H01L39/12 ,  G01J1/44 ,  G02B6/107 ,  G01J2001/442

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

公开(公告)号：US20220399474A1

公开(公告)日：2022-12-15

申请号：US17345992

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mengnan Zou ,  Mingwei Zhu ,  David Masayuki Ishikawa ,  Nag Patibandla

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

公开(公告)号：US20220384705A1

公开(公告)日：2022-12-01

申请号：US17883508

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/54 ,  C23C14/34

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20220310872A1

公开(公告)日：2022-09-29

申请号：US17701599

申请日：2022-03-22

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Byung Sung Kwak ,  Mingwei Zhu ,  Hou T. Ng ,  Nag B. Patibandla ,  Christopher Dennis Bencher

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/58 ,  H01L25/075

Abstract: A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.