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    Field effect transistor and method of manufacturing the same
    51.
    发明授权
    Field effect transistor and method of manufacturing the same 失效
    场效应晶体管及其制造方法

    公开(公告)号：US07091561B2

    公开(公告)日：2006-08-15

    申请号：US10863226

    申请日：2004-06-09

    申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

    发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

    摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

    Light emitter with lowered heterojunction interface barrier
    53.
    发明授权
    Light emitter with lowered heterojunction interface barrier 失效
    具有降低的异质结界面屏障的发光体

    公开(公告)号：US6005263A

    公开(公告)日：1999-12-21

    申请号：US976916

    申请日：1997-11-24

    申请人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    发明人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    IPC分类号： H01L33/00 ,  H01L33/02

    CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/0087

    摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.

    摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。