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51.发明申请公开(公告)号：US20140160829A1
公开(公告)日：2014-06-12
申请号：US13710616
申请日：2012-12-11
IPC分类号： G11C19/08
CPC分类号： G11C19/0841 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/08
摘要： An apparatus for applying Oersted fields to a magnetic memory device comprises a first metal layer; a first insulating layer positioned on the first metal layer; a magnetic shift register wire positioned on the first insulating layer; a second insulating layer positioned on the magnetic shift register wire; a second metal layer positioned on the second insulating layer; a first conducting wire positioned in the first metal layer and extending transverse to the magnetic shift register wire; and a second conducting wire positioned in the second metal layer and extending transverse to the magnetic shift register wire. The first conducting wire is offset relative to the second conducting wire, the offset being defined by a distance between a first axis normal to the magnetic shift register wire and through the first conducting wire and a second axis normal to the magnetic shift register wire and through the second conducting wire.
摘要翻译： 一种将奥斯特德场施加到磁存储器件的装置包括第一金属层; 定位在第一金属层上的第一绝缘层; 位于所述第一绝缘层上的磁性移位寄存器线; 定位在磁移位寄存器线上的第二绝缘层; 位于所述第二绝缘层上的第二金属层; 位于所述第一金属层中并横向于所述磁性移位寄存器线延伸的第一导线; 以及位于第二金属层中并横向于磁性移位寄存器线延伸的第二导线。 第一导线相对于第二导线偏移，偏移由通常与磁移位寄存器导线垂直的第一轴与第一导线之间的距离和与磁移位寄存器线垂直的第二轴定义， 第二根导线。
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52.发明授权公开(公告)号：US11411175B2
公开(公告)日：2022-08-09
申请号：US16866989
申请日：2020-05-05
发明人： Anthony J. Annunziata , Chandrasekara Kothandaraman , Nathan P. Marchack , Eugene J. O'Sullivan
摘要： A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate and at least one trench line formed within the substrate. The semiconductor device further includes a self-aligned landing pad in contact with the at least one trench line, and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. The method includes forming a conductive layer on and in contact with at least one trench line formed within a substrate. Magnetic tunnel junction stack layers are deposited on and in contact with the conductive layer. The magnetic tunnel junction stack layers are etched to form a magnetic tunnel junction stack, where the etching stops on the conductive layer.
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公开(公告)号：US10734571B2
公开(公告)日：2020-08-04
申请号：US16026381
申请日：2018-07-03
摘要： Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
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公开(公告)号：US10566524B2
公开(公告)日：2020-02-18
申请号：US15814797
申请日：2017-11-16
摘要： Methods of forming the MRAM generally include forming an array of MTJ having sub-lithographic dimensions. The array can be formed by providing a substrate including a MTJ material stack including a reference ferromagnetic layer, a tunnel barrier layer, and a free ferromagnetic layer on an opposite side of the tunnel barrier layer. A hardmask layer is deposited onto the MTJ material stack. A first sidewall spacer is formed on the hardmask layer in a first direction. A second sidewall spacer is formed over the first sidewall in a second direction, wherein the first direction is orthogonal to the second direction. The second sidewall spacer intersects the first sidewall spacer. The first sidewall spacer is processed using the second sidewall spacer as mask to form a pattern of oxide pillars having sub-lithographic dimensions. The pattern of oxide pillars are transferred into the MTJ stack to form the array.
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公开(公告)号：US10170698B2
公开(公告)日：2019-01-01
申请号：US15590545
申请日：2017-05-09
发明人： Anthony J. Annunziata , Armand A. Galan , Steve Holmes , Eric A. Joseph , Gen P. Lauer , Qinghuang Lin , Nathan P. Marchack
摘要： A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.
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公开(公告)号：US20180309053A1
公开(公告)日：2018-10-25
申请号：US16023090
申请日：2018-06-29
CPC分类号： H01L43/12 , G11C11/161 , H01L27/222 , H01L27/224 , H01L43/02 , H01L43/08
摘要： A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.
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公开(公告)号：US20180308898A1
公开(公告)日：2018-10-25
申请号：US16021214
申请日：2018-06-28
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L45/06
摘要： A method of forming a semiconductor structure includes forming two or more pillar structures over a top surface of a substrate. The method also includes forming two or more contacts to the two or more pillar structures. The method further includes forming an insulator between the two or more pillar structures and the two or more contacts. The two or more contacts are self-aligned to the two or more pillar structures by forming the insulator via conformal deposition and etching the insulator selective to a spin-on material formed over the insulator between the two or more pillar structures.
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公开(公告)号：US10079355B2
公开(公告)日：2018-09-18
申请号：US15613364
申请日：2017-06-05
IPC分类号： H01L21/441 , H01L51/05 , H01L29/786 , H01L29/16 , H01L29/06 , H01L21/02 , H01L21/283 , H01L29/20 , H01L29/24 , H01L21/04 , H01L51/00 , H01L29/66 , H01L29/778 , G01N27/414 , H01L43/08 , H01L49/02 , H01L23/532 , H01L21/768
CPC分类号： H01L51/0541 , G01N27/414 , G01N27/4141 , G01N27/4146 , H01L21/02527 , H01L21/0254 , H01L21/02568 , H01L21/02606 , H01L21/043 , H01L21/283 , H01L21/441 , H01L21/7682 , H01L23/53276 , H01L28/60 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/2003 , H01L29/24 , H01L29/66045 , H01L29/66969 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L43/08 , H01L51/0048 , H01L51/0558 , H01L2221/1094
摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.
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公开(公告)号：US20180259323A1
公开(公告)日：2018-09-13
申请号：US15801920
申请日：2017-11-02
CPC分类号： G01B11/161 , G01B11/16 , G11C11/16 , G11C11/161 , G11C29/00 , G11C29/50 , G11C2029/5002 , H01L23/528 , H01L27/222 , H01L43/08
摘要： A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
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公开(公告)号：US20180259322A1
公开(公告)日：2018-09-13
申请号：US15453431
申请日：2017-03-08
CPC分类号： G01B11/161 , G01B11/16 , G11C11/16 , G11C11/161 , G11C29/00 , G11C29/50 , G11C2029/5002 , H01L23/528 , H01L27/222 , H01L43/08
摘要： A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.
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