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公开(公告)号:US20200251627A1
公开(公告)日:2020-08-06
申请号:US16065371
申请日:2016-12-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann
Abstract: A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.
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公开(公告)号:US20200152822A1
公开(公告)日:2020-05-14
申请号:US16087646
申请日:2017-03-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Georg Dirscherl , Siegfried Herrmann
Abstract: A method for producing an electronic device and an electronic device are disclosed. In an embodiment a method for producing an electronic device includes attaching semiconductor chips on a carrier, applying a fluoropolymer to main surfaces of the semiconductor chips facing away from the carrier and a main surface of the carrier facing the semiconductor chip thereby forming an encapsulation layer including a fluoropolymer, structuring the encapsulation layer thereby forming cavities in the encapsulation layer and applying a metal layer in the cavities.
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公开(公告)号:US20190214375A1
公开(公告)日:2019-07-11
申请号:US16071253
申请日:2017-03-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann
IPC: H01L25/075 , H01L33/62 , H01L33/46 , H01L33/48 , H01L33/60
CPC classification number: H01L25/0756 , H01L25/0753 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2933/0091
Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment a component includes a housing having a recess, a first semiconductor chip for generating light of a first color and a second semiconductor chip for generating light of a second color which is different from the first color, wherein, during operation, a mixed radiation including at least the light of the first color is emitted along a main emission direction, wherein the first semiconductor chip is arranged in a first plane and the second semiconductor chip is arranged in a second plane in the recess, the planes following one another along the main emission direction, wherein active zones of the first and second semiconductor chips are arranged side by side to one another, and wherein at least one electrical connection surface of the first semiconductor chip forms a part of a mounting surface of the semiconductor component.
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公开(公告)号:US10243117B2
公开(公告)日:2019-03-26
申请号:US15573820
申请日:2016-05-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann , Ion Stoll , Georg Roßbach
IPC: H01L33/50 , C25D13/02 , C25D13/12 , H01L33/00 , H01L33/32 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/48
Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.
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55.
公开(公告)号:US10128424B2
公开(公告)日:2018-11-13
申请号:US15553565
申请日:2016-02-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann
Abstract: The invention relates in at least one embodiment to the production of optoelectronic semiconductor components and comprises the steps: A) providing an intermediate carrier (2) having a plurality of fixing points (23), B) providing optoelectronic semiconductor chips (3) each having a chip upper side (30) and a mounting side (32) located opposite thereto, wherein electric contact points (34) of the semiconductor chips (3) are each located on the mounting sides (32), C) attaching connecting means (4), D) fixing the contact points (34) to the fixing points (23) by means of the connecting means (4), E) producing a potting layer (5), such that the semiconductor chips (3) and the contact points (34) and the connecting means (4) are directly surrounded all round by the potting layer (5), F) detaching the semiconductor chips (3), such that the connecting means (4) are removed from the semiconductor chips (3) and recesses (44) are each provided at the contact points (34) as a negative form in relation to the connecting regions (4), and G) producing electric contact structures (6).
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公开(公告)号:US10121775B2
公开(公告)日:2018-11-06
申请号:US15038034
申请日:2014-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Christian Leirer , Berthold Hahn , Karl Engl , Johannes Baur , Siegfried Herrmann , Andreas Ploessl , Simeon Katz , Tobias Meyer , Lorenzo Zini , Markus Maute
Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.
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57.
公开(公告)号:US10109780B2
公开(公告)日:2018-10-23
申请号:US15127401
申请日:2015-03-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann
IPC: H01L33/62 , H01L33/38 , H01L33/48 , H01L23/12 , H01L23/498 , H01L25/16 , H01L31/02 , H01L31/0224 , H01L23/043 , H01L23/36 , H01L33/64
Abstract: What is specified is: an optoelectronic semiconductor component (1) comprising a carrier (5) and a semiconductor body (2), wherein the semiconductor body is fastened on the carrier and has a semiconductor layer sequence having an active region (20) provided for generating and/or receiving radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. The carrier is electrically conductive and is divided into a first carrier body (51) and a second carrier body (52), wherein the first carrier body and the second carrier body are electrically insulated from one another. The first carrier body has a first external contact (61) of the semiconductor component on the side remote from the semiconductor body, wherein the first contact is electrically conductively connected to the first semiconductor layer via the first carrier body. The second carrier body has a second external contact (62) of the semiconductor component on the side remote from the semiconductor body, wherein the second contact is electrically conductively connected to the second semiconductor layer via the second carrier body. The invention furthermore relates to a method for producing semiconductor components.
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58.
公开(公告)号:US20180261734A1
公开(公告)日:2018-09-13
申请号:US15573820
申请日:2016-05-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann , Ion Stoll , Georg Roßbach
IPC: H01L33/50 , H01L33/62 , H01L33/00 , H01L33/54 , H01L33/58 , H01L33/56 , H01L33/32 , C25D13/12 , C25D13/02
CPC classification number: H01L33/505 , C25D13/02 , C25D13/12 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/96 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.
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公开(公告)号:US20180040787A1
公开(公告)日:2018-02-08
申请号:US15663984
申请日:2017-07-31
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann
IPC: H01L33/60 , H01L25/075 , H01L33/62
CPC classification number: H01L33/60 , F21Y2115/10 , H01L25/0753 , H01L33/38 , H01L33/62 , H01L2224/48091
Abstract: A light-emitting component includes at least two radiation-emitting semiconductor chips of a first type configured to emit electromagnetic radiation during operation, and a light exit surface at a light exit side of the light-emitting component, wherein each of the radiation-emitting semiconductor chips of the first type includes a semiconductor layer sequence with a stacking direction, the stacking direction of each radiation-emitting semiconductor chip of the first type is parallel to the light exit surface of the component, and all the semiconductor chips of the first type are arranged directly below the light exit surface.
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公开(公告)号:US20180006196A1
公开(公告)日:2018-01-04
申请号:US15543665
申请日:2015-12-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Alexander Linkov , Siegfried Herrmann
CPC classification number: H01L33/504 , H01L24/96 , H01L33/508 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2224/04105 , H01L2224/19 , H01L2224/96 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.
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