摘要:
The present invention relates to a dispersion of a linear polyester resin for use in the property-improvement of shaped high polymer articles, said dispersion being obtained by mixing a linear polyester resin with a higher alcohol/ethylene oxide addition type surface-active agent, melting the mixture and dispersing the resulting melt by pouring it into an aqueous solution of an alkali under stirring. The dispersion may be used as coating or impregnating agents for shaped high molecular weight polymers.
摘要:
Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.
摘要:
A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.
摘要翻译:可固化组合物包括:通过包括R1SiX3,R2SiX3,R3R4SiX2和R5SiX3的有机硅烷混合物的水解缩合得到的Mw为3,000〜100,000的含硅聚合物100质量份,R2SiX3和R3R4SiX2的合计为5〜60 mol%,任选的预聚物,任选的环状硅氧烷化合物,0.0001-10质量份有机过氧化物和任选的金属催化剂,以及10-1500质量份填料,其中R1是C2-6链烯基, R2是C1-6烷基,R3和R4各自是C1-6烷基,R5是任选被C 1-6烷基取代的苯基,X是C 1-6烷氧基,一个或多个 R 2〜R 4为甲基,f表示2〜10的数,g表示0〜8的数,n表示1或2。
摘要:
A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.
摘要:
Provided is a resin composition for encapsulating a semiconductor which has excellent flame resistance and solder resistance, and can be manufactured at a low cost. The composition includes a phenol resin (A), an epoxy resin (B), and an inorganic filler (C). The phenol resin (A) includes at least one polymer component (A0) composed of a polymer having structural units represented by general formulae (1) and (2), and at least one polymer component (A0) is composed of a polymer having structural units represented by general formulae (1) and (2) and terminated on at least one end with an aromatic group free of polar groups and containing at least one alkyl group having 1 to 3 carbon atoms: wherein R1 and R2 are each independently a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; each R3 is independently a hydrocarbon group having 1 to 6 carbon atoms; and a is an integer of 0 to 3 , wherein R5, R6, R8 and R9 are each independently a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; each R4 and R7 is independently a hydrocarbon group having 1 to 6 carbon atoms; b is an integer of 0 to 3; and c is an integer of 0 to 4.
摘要:
Disclosed is a resin composition for encapsulating a semiconductor containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), wherein the epoxy resin (A) includes an epoxy resin (A1) having a predetermined structure, and the curing agent (B) includes a phenol resin (B1) having a predetermined structure, wherein the content of a c=1 component included in the total amount of the phenol resin (B1) is not less than 40% in terms of area percentage and the content of a C≧4 component is not more than 20% in terms of area percentage, as measured by the area method of gel permeation chromatography. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.
摘要:
A system (100) of the present invention for producing an iodine compound includes: a raw material adjusting unit (1) for supplying hydrogen-containing gas to at least one of liquid iodine in an iodine melting pot (4) and gaseous iodine obtained by evaporating liquid iodine so as to obtain a mixture gas; a hydrogen iodide producing unit (10) including a hydrogen iodide producing tower (12) having a catalyst layer (12a) for converting the introduced mixture gas into crude hydrogen iodide gas; a hydrogen iodide refining unit for removing unreacted iodine from the introduced crude hydrogen iodide gas so as to obtain hydrogen iodide gas; and an iodine compound producing unit (30) for producing a target iodine compound from the obtained hydrogen iodide gas and a reaction material. This allows producing an iodine compound with high purity easily, efficiently, and with low cost.
摘要:
Porous titanium having a low contact resistance includes porous titanium body, Au, and Ti oxide layer (3). Porous titanium includes continuous holes (1) opening on a surface and being connected to inner holes and a skeleton (2). Au adheres to at least an outer skeletal surface (4) of the porous titanium via diffusion bonding to form a network structure. The Ti oxide layer (3) is formed in a clearance between adjacent Au cords (5) of the Au network sticking. The width of an Au cord (5) of the Au network is 0.3 to 10 μm at least at one position; and the thickness of the Ti oxide layer (3), which is formed in the clearance between adjacent Au cords (5) of the Au network is 30 to 150 nm.
摘要:
A request signal requesting a response signal from an ID card is transmitted, and, when a response signal is received, it is compared with the data identifying the manager, which is stored in advance, and a determination is made as to whether or not the data identifying the manager is received. If the data is determined to be received, a timer is set, and, if there is a job being held up, the output processing of the job is executed. When it is determined that a predetermined time has elapsed, outputting is notified to be restricted, thereafter outputting is prohibited.
摘要:
Perforations of a board for building material are formed by a number of recesses (13), or a number of recesses (13) and through-holes (12). A bottom face (16) of the recess forms a face for screwing or driving the fixing element (70) thereto. A color of the bottom face is set to have a brightness of color decreased in comparison with a color of a surface (18) of the board. A substrate of the board is a gypsum board and the bottom face of the recess is formed by a liner paper for gypsum board. According to such a board, a region for screwing or driving the fixing element thereto can be ensured without impairing regularity, uniformity or architectural design of the perforations, and putty finishing or the like for an exposed part of the fixing element can be omitted.