公开(公告)号：US11960185B2

公开(公告)日：2024-04-16

申请号：US17041599

申请日：2019-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kouhei Toyotaka ,  Satoshi Yoshimoto ,  Kazunori Watanabe ,  Susumu Kawashima ,  Kei Takahashi

IPC: G09G3/30 ,  G02F1/1362 ,  G09G3/12 ,  G09G3/32 ,  G09G3/36 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G09G3/32 ,  G09G3/3648 ,  G02F1/1368 ,  G09G2300/0842 ,  G09G2310/0202 ,  G09G2310/04 ,  G09G2320/103 ,  G09G2330/021

Abstract: Display data of pixels is updated at different timings. A scan line is connected to a first pixel and a second pixel, a first wiring is connected to the first pixel, and a second wiring is connected to the second pixel. In a first period, a signal for selecting the first pixel and the second pixel is supplied to the scan line. Setting data for setting a state where the display data of the first pixel is updated is supplied to the first wiring, and setting data for setting a state where the display data of the second pixel is updated is supplied to the second wiring. In a second period, a signal for selecting the first pixel and the second pixel is supplied to the scan line. Setting data for setting a state where the display data of the first pixel is not updated is supplied to the first wiring, and the setting data for setting the state where the display data of the second pixel is updated is supplied to the second wiring. In a third period, the first pixel displays first display data, and the second pixel displays second display data.

公开(公告)号：US11955562B2

公开(公告)日：2024-04-09

申请号：US17889597

申请日：2022-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Naoki Okuno ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/4966 ,  H01L29/517

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US11954276B2

公开(公告)日：2024-04-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US11950474B2

公开(公告)日：2024-04-02

申请号：US18143182

申请日：2023-05-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kensuke Yoshizumi

IPC: H05K1/18 ,  G04G9/00 ,  H10K59/121 ,  H10K59/131 ,  H10K77/10 ,  H01L27/12 ,  H05K1/02 ,  H05K1/14 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/131 ,  G04G9/0088 ,  H10K59/1213 ,  H10K77/111 ,  H01L27/1244 ,  H05K1/0277 ,  H05K1/028 ,  H05K1/0283 ,  H05K1/147 ,  H05K1/189 ,  H05K2201/05 ,  H05K2201/051 ,  H05K2201/052 ,  H05K2201/053 ,  H05K2201/055 ,  H10K59/1201 ,  H10K2102/311 ,  Y02E10/549

Abstract: One embodiment of the present invention provides a highly reliable display device. In particular, a display device to which a signal or a power supply potential can be supplied stably is provided. Further, a bendable display device to which a signal or a power supply potential can be supplied stably is provided. The display device includes, over a flexible substrate, a display portion, a plurality of connection terminals to which a signal from an outside can be input, and a plurality of wirings. One of the plurality of wirings electrically connects one of the plurality of connection terminals to the display portion. The one of the plurality of wirings includes a first portion including a plurality of separate lines and a second portion in which the plurality of lines converge.

公开(公告)号：US11942370B2

公开(公告)日：2024-03-26

申请号：US17979807

申请日：2022-11-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US11935959B2

公开(公告)日：2024-03-19

申请号：US17964203

申请日：2022-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/66 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/15 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/66742 ,  H01L29/7869 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/14612 ,  H01L27/15 ,  H10K59/1213 ,  H10K59/124

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US11923372B2

公开(公告)日：2024-03-05

申请号：US17308116

申请日：2021-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kensuke Yoshizumi

IPC: H01L27/12 ,  H01L27/04 ,  H01L27/06 ,  H01L29/423 ,  H10B12/00 ,  H10B41/70 ,  G11C16/10 ,  H01L21/84 ,  H01L29/24 ,  H10B41/20 ,  H10B41/30

CPC classification number: H01L27/1207 ,  H01L27/04 ,  H01L27/0688 ,  H01L29/42384 ,  H10B12/00 ,  H10B41/70 ,  G11C16/10 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/24 ,  H10B12/30 ,  H10B41/20 ,  H10B41/30

Abstract: A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.

公开(公告)号：US11923206B2

公开(公告)日：2024-03-05

申请号：US17989861

申请日：2022-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US11923204B2

公开(公告)日：2024-03-05

申请号：US17944551

申请日：2022-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/465 ,  H01L21/477 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20240065036A1

公开(公告)日：2024-02-22

申请号：US18270945

申请日：2021-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuhiro JINBO ,  Yuichi YANAGISAWA

IPC: H10K59/122 ,  H10K50/17 ,  H10K59/12 ,  H10K59/80 ,  H10K85/60

CPC classification number: H10K59/122 ,  H10K50/171 ,  H10K59/1201 ,  H10K59/879 ,  H10K85/626 ,  H10K85/6572

Abstract: A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.