公开(公告)号：US12074224B2

公开(公告)日：2024-08-27

申请号：US17591690

申请日：2022-02-03

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yoshinobu Asami ,  Yutaka Okazaki ,  Satoru Okamoto ,  Shinya Sasagawa

IPC分类号： H01L29/786 ,  C23C16/40 ,  C23C16/455 ,  H01L21/475 ,  H01L21/4757 ,  H01L21/67 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7869 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/67207 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262

摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

公开(公告)号：US20240284766A1

公开(公告)日：2024-08-22

申请号：US18569497

申请日：2022-06-06

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Nobuharu OHSAWA ,  Takumu OKUYAMA ,  Satoshi SEO

IPC分类号： H10K59/80 ,  H10K59/131

CPC分类号： H10K59/878 ,  H10K59/131

摘要： A novel display device that is highly convenient, useful, or reliable is provided. The display device includes a first light-emitting device, a second light-emitting device, an insulating film, a conductive film, a first reflective film, and a second reflective film; the first light-emitting device includes a first electrode, a second electrode, and a first unit; and the first electrode is interposed between the first unit and the insulating film. The second light-emitting device includes a third electrode, a fourth electrode, and a second unit; the third electrode is interposed between the second unit and the insulating film; and a first gap is provided between the third electrode and the first electrode. The conductive film electrically connects the second electrode and the fourth electrode to each other, and the first gap is interposed between the conductive film and the insulating film. The first reflective film is interposed between the first electrode and the insulating film, and there is a first distance DR between the first reflective film and the second electrode. The second reflective film is interposed between the third electrode and the insulating film, and there is a second distance DG between the second reflective film and the fourth electrode. The second distance DG is longer than the first distance DR and the difference is larger than 20 nm and smaller than 85 nm.

公开(公告)号：US20240284674A1

公开(公告)日：2024-08-22

申请号：US18586866

申请日：2024-02-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Takanori MATSUZAKI ,  Kiyoshi KATO ,  Satoru OKAMOTO

IPC分类号： H10B43/27 ,  H01L29/24 ,  H01L29/51 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50

CPC分类号： H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50 ,  H01L29/24 ,  H01L29/513

摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

公开(公告)号：US12068198B2

公开(公告)日：2024-08-20

申请号：US17605187

申请日：2020-04-27

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Naoto Yamade ,  Takashi Hamada ,  Hiroki Komagata

IPC分类号： H01L21/8234 ,  H01L21/225 ,  H01L21/28 ,  H01L29/66 ,  H01L27/088 ,  H01L29/786

CPC分类号： H01L21/823412 ,  H01L21/2253 ,  H01L21/28185 ,  H01L29/6675 ,  H01L27/088 ,  H01L29/7869 ,  H01L29/78696

摘要： To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

公开(公告)号：US20240274696A1

公开(公告)日：2024-08-15

申请号：US18606052

申请日：2024-03-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78696

摘要： The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20240274627A1

公开(公告)日：2024-08-15

申请号：US18644613

申请日：2024-04-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Takahiro FUKUTOME ,  Hiromichi GODO

IPC分类号： H01L27/146 ,  G01J1/42 ,  G01K13/00 ,  G06F18/214 ,  G06N3/04 ,  G06N3/08 ,  G06V10/147 ,  G06V10/44 ,  G06V10/82 ,  G06V10/94 ,  G06V20/68 ,  H04N25/75 ,  H04N25/77

CPC分类号： H01L27/14612 ,  G06F18/214 ,  G06N3/04 ,  G06N3/08 ,  G06V10/147 ,  G06V10/454 ,  G06V10/82 ,  G06V10/95 ,  H04N25/75 ,  H04N25/77 ,  G01J1/42 ,  G01K13/00 ,  G06V20/68

摘要： Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.

公开(公告)号：US20240272735A1

公开(公告)日：2024-08-15

申请号：US18627619

申请日：2024-04-05

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC分类号： G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC分类号： G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

摘要： A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US12063856B2

公开(公告)日：2024-08-13

申请号：US17703524

申请日：2022-03-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yui Yoshiyasu ,  Naoaki Hashimoto ,  Tatsuyoshi Takahashi ,  Sachiko Kawakami ,  Satoshi Seo

IPC分类号： H10K85/60 ,  H10K50/16

CPC分类号： H10K85/6572 ,  H10K85/615 ,  H10K85/626 ,  H10K85/654 ,  H10K50/16

摘要： A novel mixed material for a light-emitting device with improved heat resistance is provided. The mixed material for a light-emitting device includes a first heteroaromatic compound and a second heteroaromatic compound. The first heteroaromatic compound includes a first heteroaromatic ring. The first heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. The second heteroaromatic compound includes a second heteroaromatic ring. The second heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. A structure of the first heteroaromatic ring is different from a structure of the second heteroaromatic ring.

公开(公告)号：US12063802B2

公开(公告)日：2024-08-13

申请号：US17768150

申请日：2020-10-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daisuke Kubota ,  Taisuke Kamada ,  Ryo Hatsumi ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima

IPC分类号： H10K39/34 ,  H10K50/858

CPC分类号： H10K39/34 ,  H10K50/858

摘要： A display apparatus having a photoelectric conversion function with high sensitivity is provided. The light extraction efficiency of the display apparatus is increased. The display apparatus includes a light-emitting device, a light-emitting and light-receiving device, a first lens, and a second lens. The light-emitting device has a function of emitting light of a first color. The light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color and converting it into an electric signal. The light emitted by the light-emitting device is emitted to the outside of the display apparatus through the first lens. Light enters the light-emitting and light-receiving device from the outside of the display apparatus through the second lens.

公开(公告)号：US12062310B2

公开(公告)日：2024-08-13

申请号：US18092468

申请日：2023-01-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hajime Kimura ,  Atsushi Umezaki

IPC分类号： G11C19/00 ,  G02F1/133 ,  G06F3/038 ,  G09G3/14 ,  G09G3/36 ,  G11C19/28 ,  H01L27/12 ,  G09G3/20 ,  G09G3/3291

CPC分类号： G09G3/14 ,  G02F1/133 ,  G06F3/038 ,  G09G3/3677 ,  G09G3/3688 ,  G11C19/28 ,  H01L27/124 ,  G09G3/20 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3614 ,  G09G3/3674 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2320/043

摘要： To suppress degradation of a transistor. A method for driving a liquid crystal display device has a first period and a second period. In the first period, a first transistor and a second transistor are alternately turned on and off repeatedly, and a third transistor and a fourth transistor are turned off. In the second period, the first transistor and the second transistor are turned off, and the third transistor and the fourth transistor are alternately turned on and off repeatedly. Accordingly, the time during which the transistor is on can be reduced, so that degradation of characteristics of the transistor can be suppressed.