公开(公告)号：US20170281980A1

公开(公告)日：2017-10-05

申请号：US15087292

申请日：2016-03-31

Applicant: Varian Medical Systems Particle Therapy GmbH

Inventor： Joerg WULFF

IPC: A61N5/10 ,  H01J37/08 ,  H01J37/14

CPC classification number: A61N5/1077 ,  A61N5/1043 ,  A61N2005/1087 ,  A61N2005/1095 ,  G21K1/093 ,  H01J37/08 ,  H01J37/14 ,  H01J2237/14

Abstract: Embodiments of the present invention disclose methods and systems for producing an adaptive pencil beam having an adjustable lateral beam size and Bragg-peak width. According to one disclosed embodiment, an apparatus for producing an adaptive pencil beam is disclosed. The apparatus includes a set of momentum band expanders configured to widen a momentum spread of a pencil beam, where a momentum band expander is selected from the set of momentum band expanders to receive the pencil beam, and a slit at dispersive focus of two dipole magnets to adjust a width of a Bragg-peak of the pencil beam. According to another disclosed embodiment, a method for producing an adaptive pencil beam with an adjustable lateral beam is disclosed. The method includes selecting a scatter foil, or setting of a defocusing/focusing magnet, and adjusting a lateral size of the pencil beam.

公开(公告)号：US09773634B2

公开(公告)日：2017-09-26

申请号：US15416686

申请日：2017-01-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J37/304 ,  G01Q60/10 ,  H01J37/08 ,  H01J1/304 ,  H01J37/073 ,  H01J37/21 ,  H01J37/28 ,  G01Q60/16 ,  G01Q70/08 ,  H01J37/30

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

公开(公告)号：US20170271128A1

公开(公告)日：2017-09-21

申请号：US15457698

申请日：2017-03-13

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3172 ,  H01J2237/24535 ,  H01J2237/30488

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

公开(公告)号：US09761407B2

公开(公告)日：2017-09-12

申请号：US15021350

申请日：2014-10-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki Muto ,  Yoshimi Kawanami ,  Hiroyasu Shichi ,  Shinichi Matsubara

IPC: H01J37/26 ,  H01J1/304 ,  H01J37/08 ,  B23K9/00 ,  H01J27/26 ,  H01J37/147 ,  H01J37/18 ,  H01J37/285 ,  H01J37/30

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/1474 ,  H01J37/18 ,  H01J37/285 ,  H01J37/3005 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/28

Abstract: The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

公开(公告)号：US20170257036A1

公开(公告)日：2017-09-07

申请号：US15432234

申请日：2017-02-14

Applicant: SMC Corporation

Inventor： Naoto SASADA ,  Tomokazu Hariya ,  Takayuki Toshida

IPC: H02M7/06 ,  H01J37/08 ,  H01J37/248 ,  H02M1/088

CPC classification number: H02M7/06 ,  H01J37/08 ,  H01J37/248 ,  H02M1/088 ,  H02M7/103 ,  H02M2001/0048 ,  Y02B70/1491

Abstract: A high voltage generation circuit is equipped with an AC power source, a positive polarity high voltage generating circuit, and a negative polarity high voltage generating circuit. A phase converter that converts the phase of an AC voltage supplied from the AC power source is disposed between the AC power source and the positive polarity high voltage generating circuit, or between the AC power source and the negative polarity high voltage generating circuit.

公开(公告)号：US09754786B2

公开(公告)日：2017-09-05

申请号：US14691904

申请日：2015-04-21

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J27/22 ,  H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  F17C7/00 ,  H01L21/265 ,  H01J37/30 ,  H01L21/223

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09721747B2

公开(公告)日：2017-08-01

申请号：US15366660

申请日：2016-12-01

Applicant: CANON ANELVA CORPORATION

Inventor： Masashi Tsujiyama ,  Yukito Nakagawa ,  Yasushi Yasumatsu

IPC: H01J9/14 ,  H01J27/02 ,  H01J27/16 ,  H01J37/04 ,  H01J37/08

CPC classification number: H01J27/024 ,  H01J9/14 ,  H01J27/16 ,  H01J37/04 ,  H01J37/08 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/3174

Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

公开(公告)号：US20170200520A1

公开(公告)日：2017-07-13

申请号：US15470513

申请日：2017-03-27

Applicant: Taylor Ramon WILSON

Inventor： Taylor Ramon WILSON

IPC: G21G1/00 ,  H05H1/46 ,  G21G1/02

CPC classification number: G21G1/001 ,  G21F3/00 ,  G21G1/02 ,  G21G1/04 ,  G21G1/10 ,  G21G2001/0015 ,  H01J37/08 ,  H01J2237/164 ,  H05H1/46

Abstract: A dense plasma focus (DPF) to produce positron emitters is provided, where a pulsed device has an anode and a cathode arranged in a vacuum chamber, the anode and cathode being subjected to a high voltage. When the vacuum chamber is filled with a reaction gas and a high voltage generated is applied, a plasma sheath is created and a reaction between the electrodes take place to produce plasmoids resulting in an ion beam that interacts with a reactive gas to produce radio-isotopes.

公开(公告)号：US20170191962A9

公开(公告)日：2017-07-06

申请号：US14666856

申请日：2015-03-24

Applicant: MORPHO DETECTION, LLC

Inventor： Andrey N. Vilkov ,  Jack A. Syage

IPC: G01N27/62 ,  G01N33/00 ,  G01N33/22 ,  H01J37/08 ,  H01J49/10

CPC classification number: G01N27/622 ,  G01N33/0036 ,  G01N33/227 ,  H01J37/08 ,  H01J49/107

Abstract: A dual source ionizer includes a first ionization source and a second ionization source. The first ionization source is configured to generate a first electric field. The first electric field has a first field strength that is insufficient to form NOx− ions. The second ionization source is configured to generate a second electric field. The second electric field has a second field strength that is sufficient to form ozone and the NOx− ions.

公开(公告)号：US20170178857A1

公开(公告)日：2017-06-22

申请号：US14977720

申请日：2015-12-22

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Scott C. Holden ,  Bon-Woong Koo ,  Brant S. Binns ,  Richard M. White ,  Kenneth L. Starks ,  Eric R. Cobb

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3002 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/002

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.