公开(公告)号：US3909319A

公开(公告)日：1975-09-30

申请号：US38240873

申请日：1973-07-25

申请人： FUJIWARA SHOHEI ,  KOIKE SUSUMU

发明人： FUJIWARA SHOHEI ,  KOIKE SUSUMU

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L33/30 ,  H01L33/40 ,  H01L21/22

CPC分类号： H01L33/40 ,  H01L21/00 ,  H01L21/31687 ,  H01L24/32 ,  H01L33/30 ,  H01L33/305 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/12036 ,  H01L2924/12041 ,  Y10S148/02 ,  Y10S148/056 ,  Y10S148/105 ,  Y10S148/106 ,  Y10S438/923 ,  H01L2924/00014 ,  H01L2924/00

摘要： In forming a junction in an energy converting diode by diffusing an impurity such as Zn into a III - V compound crystal such as GaAs, a junction region doped with an impurity such as Zn can be formed directly beneath a thin metal film by forming a thin layer of refractory metal such as Ta on a surface of said crystal, sealing this structure in a reaction tube together with an impurity source such as ZnAs2, and heating the tube within a heating furnace to perform diffusion treatment. In such a formed device, said metal film formed on the surface of the junction region is not lost by the diffusion treatment and remains completely. Further, the remaining metal film makes a good and strong ohmic contact with the matrix crystal, therefore it can be utilized as an electrode and also as a heat dissipating medium by adhering a heat dissipator thereon to form a good heat dissipating device. When part of said refractory metal film is oxidized by anodization, this oxidized film can work as a mask for impurity diffusion and enables selective diffusion of the junction region.

摘要翻译： 在通过将诸如Zn的杂质扩散到诸如GaAs的III-V复合晶体中来形成能量转换二极管中的结时，可以通过形成薄的金属膜直接形成掺杂有诸如Zn的杂质的结区域 在所述晶体的表面上的诸如Ta的难熔金属层，与诸如ZnAs 2的杂质源一起将反应管中的该结构密封，并且在加热炉内加热管以进行扩散处理。 在这种形成的装置中，形成在接合区域的表面上的金属膜不会被扩散处理所损失，并且完全保留。 此外，剩余的金属膜与基体晶体形成良好且强烈的欧姆接触，因此其可以用作电极，并且还可以通过将散热器粘附在其上以形成良好的散热装置作为散热介质。 当通过阳极氧化使所述难熔金属膜的一部分氧化时，该氧化膜可以用作杂质扩散的掩模，并且能够选择性地扩散接合区域。

公开(公告)号：US3725749A

公开(公告)日：1973-04-03

申请号：US3725749D

申请日：1971-06-30

申请人： MONSANTO CO

发明人： GROVES WARREN OLLEY ,  HERZOG ARNO HENRY ,  CRAFORD MAGNUS GEORGE

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/30 ,  H01L15/00

CPC分类号： H01L33/305 ,  H01L24/45 ,  H01L33/00 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/12036 ,  Y10S148/049 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/059 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/099 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/135 ,  Y10S438/918 ,  H01L2924/00014 ,  H01L2924/00

摘要： The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs1 xPx, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

摘要翻译： 本文的公开内容涉及由其制造的半导体材料和固态器件的制备。 更具体地说，本公开涉及用于制备掺杂有等电子杂质，特别是氮的电致发光材料，特别是GaAs1-xPx的气相工艺，以及由其制造的电致发光器件。

公开(公告)号：US3592704A

公开(公告)日：1971-07-13

申请号：US3592704D

申请日：1968-06-28

申请人： BELL TELEPHONE LABOR INC

发明人： LOGAN RALPH A ,  WHITE HARRY G ,  WIEGMANN WILLIAM

IPC分类号： H01L21/00 ,  H01L21/203 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38

CPC分类号： H01L33/305 ,  H01L21/00 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02579 ,  H01L33/00 ,  Y10S148/049 ,  Y10S148/107 ,  Y10S148/119

摘要： ELECTROLUMINESCENT P-N DIODES WHICH CONTAIN SULPHUR TO PRODUCE AN EXCESS DONOR CONCENTRATION OF 5 X 1016 TO 2X10**17 CM.-3 EXHIBIT EFFICIENCIES OF AT LEAST AN ORDER OF MAGNITUDE GREATER THAN FOR OTHER N-TYPE DOPANTS. WHEN THE DIODES ARE PRODUCED IN AN AMMONIA ATMOSPHERE, EFFICIENCY IS INCREASED STILL FURTHER.

公开(公告)号：US12125702B2

公开(公告)日：2024-10-22

申请号：US17754773

申请日：2020-10-13

申请人： DOWA Electronics Materials Co., Ltd.

发明人： Osamu Tanaka ,  Yoshitaka Kadowaki

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30

CPC分类号： H01L21/02395 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/22 ,  H01L33/305 ,  H01L33/0093

摘要： Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.

公开(公告)号：US20240297267A1

公开(公告)日：2024-09-05

申请号：US18280975

申请日：2022-03-16

申请人： Lumileds LLC

发明人： Robert Armitage

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/06 ,  H01L33/305

摘要： Described are light emitting diode (LED) devices including a quantum well comprising an indium gallium nitride (InGaN) well and a barrier layer. The indium gallium nitride (InGaN) well has an indium concentration greater than 18% mole fraction. The LED device has a dominant wavelength greater than 605 nm at a current density of greater than or equal to 2 A/cm2.

公开(公告)号：US20240194723A1

公开(公告)日：2024-06-13

申请号：US18425644

申请日：2024-01-29

申请人： Lumileds LLC

发明人： Ashish Tandon ,  Rajat Sharma ,  Joseph Flemish ,  Andrei Papou ,  Wen Yu ,  Erik William Young ,  Yu-Chen Shen ,  Luke Gordon

IPC分类号： H01L27/15 ,  F21S41/153 ,  H01L33/00 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/50 ,  H01S5/00

CPC分类号： H01L27/156 ,  F21S41/153 ,  H01L33/007 ,  H01L33/20 ,  H01L33/305 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01S5/00 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/32 ,  H01L33/36 ,  H01L2933/0016 ,  H01L2933/0041

摘要： A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

公开(公告)号：US20230369537A1

公开(公告)日：2023-11-16

申请号：US18132305

申请日：2023-04-07

申请人： Meta Platforms Technologies, LLC

发明人： Pavel GORLACHUK ,  Arjun AJAYKUMAR ,  Alexander TONKIKH

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01L27/15 ,  G02B27/01

CPC分类号： H01L33/06 ,  G02B27/0172 ,  H01L27/156 ,  H01L33/305 ,  G02B2027/0178

摘要： A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The one or more quantum well layers include at least one quantum well layer that is doped with both n-type dopants and p-type dopants. A net carrier concentration of the at least one quantum well layer is between about 1×1017 /cm3 and about 10×1017 /cm3. The n-type dopants include, for example, Si, Ge, S, Se, or Te. The p-type dopants include, for example, C, Mg, Be, or Zn. The active region is characterized by a lateral linear dimension equal to or less than about 10 µm.

公开(公告)号：US20230282764A1

公开(公告)日：2023-09-07

申请号：US18163684

申请日：2023-02-02

申请人： SEOUL VIOSYS CO., LTD.

发明人： HongJae YOO ,  SungRyong CHO ,  Miso KO ,  Eunmi CHOI

IPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/30

CPC分类号： H01L33/025 ,  H01L33/145 ,  H01L33/305

摘要： A light emitting device according to an embodiment of the present disclosure includes a first conductivity type semiconductor region; a second conductivity type semiconductor region; and a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the second conductivity type semiconductor region includes a plurality of regions including Mg balls.

公开(公告)号：US11728456B2

公开(公告)日：2023-08-15

申请号：US17750232

申请日：2022-05-20

申请人： EPISTAR CORPORATION

发明人： Meng-Yang Chen ,  Yuan-Ting Lin

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

CPC分类号： H01L33/002 ,  H01L33/04 ,  H01L33/10 ,  H01L33/305 ,  H01L33/62

摘要： A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

公开(公告)号：US20190198564A1

公开(公告)日：2019-06-27

申请号：US16226288

申请日：2018-12-19

申请人： Lumileds LLC

发明人： Ashish TANDON ,  Rajat SHARMA ,  Joseph Robert FLEMISH ,  Andrei PAPOU ,  Wen YU ,  Erik YOUNG ,  Yu-Chen SHEN ,  Luke GORDON

IPC分类号： H01L27/15 ,  F21S41/153 ,  H01L33/50 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L27/156 ,  F21S41/153 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/305 ,  H01L33/32 ,  H01L33/36 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L2933/0016 ,  H01L2933/0041

摘要： A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.