公开(公告)号：US6113691A

公开(公告)日：2000-09-05

申请号：US451341

申请日：1995-05-26

申请人： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

发明人： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC分类号： C30B29/48 ,  C30B25/02 ,  C30B25/16 ,  H01L21/365 ,  H01L33/00 ,  H01S5/327

CPC分类号： H01L33/0087 ,  C30B25/02 ,  C30B29/48 ,  H01S2304/04 ,  H01S5/327

摘要： Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.

摘要翻译： 提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。 外延层和半导体化合物可用于蓝色激光器件。

公开(公告)号：US6060119A

公开(公告)日：2000-05-09

申请号：US803208

申请日：1997-02-10

申请人： Robert W. Gedridge, Jr. ,  Thomas J. Groshens ,  Kelvin T. Higa

发明人： Robert W. Gedridge, Jr. ,  Thomas J. Groshens ,  Kelvin T. Higa

IPC分类号： C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/316 ,  H01L21/365 ,  C23C16/00

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/38 ,  C30B29/40 ,  H01L21/02524 ,  H01L21/02543 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/31625

摘要： A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX.sub.3, with tertiarybutyl Grignard reagent, ((CH.sub.3).sub.3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH.sub.3).sub.2 to form a reaction mixture; and (3) recovering ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P from the reaction mixture.

摘要翻译： 一种新的化合物叔丁基双（二甲基氨基）膦及其制备方法，其具有式（（CH3）3C）（（CH3）2N）2P。 该方法具有以下步骤：（1）使三卤化磷PX3与叔丁基格氏试剂（（CH3）3C）MgX反应，其中X为卤化物; （2）用二甲基氨基锂LiN（CH 3）2处理所得产物以形成反应混合物; 和（3）从反应混合物中回收（（CH3）3C）（（CH3）2N）2P。

公开(公告)号：US6037241A

公开(公告)日：2000-03-14

申请号：US26139

申请日：1998-02-19

申请人： Ricky C. Powell ,  Gary L. Dorer ,  Nicholas A. Reiter ,  Harold A. McMaster ,  Steven M. Cox ,  Terence D. Kahle

发明人： Ricky C. Powell ,  Gary L. Dorer ,  Nicholas A. Reiter ,  Harold A. McMaster ,  Steven M. Cox ,  Terence D. Kahle

IPC分类号： C23C16/453 ,  C03C17/00 ,  C03C17/22 ,  C23C14/24 ,  C23C14/56 ,  H01L21/363 ,  H01L21/365 ,  C23C16/00

CPC分类号： C23C14/246 ,  C03C17/002 ,  C03C17/22 ,  C23C14/228 ,  C23C14/24 ,  C23C14/56 ,  C03C2217/287 ,  C03C2218/151

摘要： Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition. In one embodiment of apparatus (12), the semiconductor layer is deposited on an upwardly facing surface (56) of the glass sheet substrate (G) while another embodiment of the apparatus (12a) deposits the semiconductor layer on a downwardly facing surface (54) of the substrate.

摘要翻译： 装置（12,12a）和用于在玻璃板基板（G）上沉积半导体材料的方法利用包括加热的可渗透构件（24）的分配器（22），载气和半导体材料通过该分配器提供 在被输送的玻璃基板上沉积为半导体层的蒸汽。 可渗透构件（24）是管状的并且具有沿其长度施加的电压以提供加热，并且作为粉末的载气和半导体被引入管状可渗透构件中，用于作为蒸气从其向外流动。 围绕管状可渗透构件（24）延伸的护罩（34）具有开口（36），蒸汽通过该开口流动用于半导体层沉积。 在装置（12）的一个实施例中，半导体层沉积在玻璃板基板（G）的面向上的表面（56）上，而装置（12a）的另一实施例将半导体层沉积在面向下的表面（54 ）。

公开(公告)号：US6025222A

公开(公告)日：2000-02-15

申请号：US387297

申请日：1995-02-10

申请人： Takafumi Kimura ,  Hideaki Yamauchi ,  Masaaki Nakabayashi

发明人： Takafumi Kimura ,  Hideaki Yamauchi ,  Masaaki Nakabayashi

IPC分类号： C01F11/00 ,  C23C16/40 ,  H01L21/205 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/365

CPC分类号： C23C16/409 ,  H01L21/31691

摘要： A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.

摘要翻译： 一种在基板上生长含有Sr的电介质膜的方法包括以下步骤：将含有Sr（（CH3）5C5）2的Sr化合物溶解在有机溶剂中或混合Sr（thd）2和胺化合物以形成源材料 ; 蒸发源材料以产生气态源材料; 在蒸发步骤中得到的气态原料分解在保持在反应室中的基板的表面附近，使得在基板的表面上沉积包含Sr的电介质膜。

公开(公告)号：US5935324A

公开(公告)日：1999-08-10

申请号：US847630

申请日：1997-04-28

申请人： Shinnichi Nakagawa ,  Kenji Sato ,  Masami Nakamura ,  Kazuhiro Toyoda ,  Takeshi Kamiya ,  Kazue Suzuki ,  Hiroki Ishihara ,  Takeshi Ikeya ,  Masaharu Ishida

发明人： Shinnichi Nakagawa ,  Kenji Sato ,  Masami Nakamura ,  Kazuhiro Toyoda ,  Takeshi Kamiya ,  Kazue Suzuki ,  Hiroki Ishihara ,  Takeshi Ikeya ,  Masaharu Ishida

IPC分类号： H01L31/04 ,  C23C14/06 ,  C23C14/22 ,  C30B25/02 ,  H01L21/203 ,  H01L21/363 ,  H01L21/365 ,  H01L31/032 ,  H01L31/0264 ,  B05D5/12 ,  C30B23/06

CPC分类号： H01L31/0322 ,  C23C14/0623 ,  C23C14/22 ,  C30B25/02 ,  C30B29/46 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93

摘要： An apparatus for forming I-III-VI.sub.2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI.sub.2 thin-film layer and a vapor source of an element of group VI of the periodic table are placed. The precursor and vapor source are heated under vacuum to form the I-III-VI.sub.2 thin-film layer. The reaction chamber is divided into a reaction compartment A having the precursor placed therein and a reaction compartment B having the vapor element of group IV placed therein. A communication channel C is provided between the reaction compartments A and B, and a heating unit controlled by a temperature control unit is provided exterior to each of the reaction compartments A and B.

摘要翻译： 用于形成I-III-VI2薄膜层的装置具有由碳材料制成的反应室，其中形成I-III-VI2薄膜层的前体和VI族元素的蒸汽源 放置周期表。 将前体和蒸气源在真空下加热以形成I-III-VI2薄膜层。 将反应室分为具有前体的反应室A和放置有IV族蒸气元素的反应室B. 在反应室A和B之间设置有通信通道C，并且在每个反应室A和B的外部设置由温度控制单元控制的加热单元。

公开(公告)号：US5730852A

公开(公告)日：1998-03-24

申请号：US571150

申请日：1995-12-12

申请人： Raghu N. Bhattacharya ,  Miguel A. Contreras ,  James Keane ,  Andrew L. Tennant ,  John R. Tuttle ,  Kannan Ramanathan ,  Rommel Noufi

发明人： Raghu N. Bhattacharya ,  Miguel A. Contreras ,  James Keane ,  Andrew L. Tennant ,  John R. Tuttle ,  Kannan Ramanathan ,  Rommel Noufi

IPC分类号： C25D3/56 ,  C23C28/02 ,  C25D5/18 ,  C25D7/12 ,  G03C1/22 ,  H01L21/36 ,  H01L21/363 ,  H01L21/365 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/0749 ,  C23C28/023 ,  C25D5/18 ,  G03C1/22 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  C25D3/56 ,  Y02E10/541 ,  Y10S205/915 ,  Y10S438/93

摘要： High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

摘要翻译： 通过将至少一种组成金属电沉积到玻璃/ Mo基板上，然后物理气相沉积铜和硒或铟和硒，制备可用于生产太阳能电池的铜铟镓二硒化物的高质量薄膜 以将薄膜的最终化学计量调整为近似Cu（In，Ga）Se2。 使用1-100KHz的交流电压与用于电沉积的直流电压组合可以改善沉积薄膜的形态和生长速率。 包含至少部分有机溶剂的电沉积溶液可以与增加的阴极电势结合使用，以增加电沉积薄膜的镓含量。

公开(公告)号：US5616178A

公开(公告)日：1997-04-01

申请号：US455844

申请日：1995-05-31

申请人： Atsushi Toda ,  Daisuke Imanishi

发明人： Atsushi Toda ,  Daisuke Imanishi

IPC分类号： H01L21/205 ,  C30B23/02 ,  C30B25/02 ,  H01L21/365 ,  C30B15/14

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/48

摘要： A method for growth of II-VI compound semiconductors grows a p-type II-VI compound semiconductor such as a p-type ZnSe by vapor deposition such as metallorganic chemical vapor deposition and molecular beam epitaxy using gaseous materials. The method uses as a p-type dopant an organic compound including at least one nitrogen atom and at least two groups of atoms each having a molecular weight larger than 12 and both combined with the nitrogen atom. One of such organic compounds is di-isopropylamine.

摘要翻译： II-VI化合物半导体的生长方法通过气相沉积如金属有机化学气相沉积和使用气态材料的分子束外延生长p型II-VI化合物半导体如p型ZnSe。 该方法使用包含至少一个氮原子和至少两个分子量大于12并且与氮原子组合的至少两个原子的有机化合物作为p型掺杂剂。 这些有机化合物之一是二异丙胺。

公开(公告)号：US5407486A

公开(公告)日：1995-04-18

申请号：US60547

申请日：1993-05-13

申请人： Kenichi Ono

发明人： Kenichi Ono

IPC分类号： C30B35/00 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/365 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4583

摘要： A CVD apparatus for growing a compound semiconductor film with a desired composition ratio on a wafer includes a heat source for supplying heat to a source gas flowing over the wafer so that a temperature gradient of the source gas is cancelled. The heat source may be a susceptor having a hollow part so that the heat capacity of the susceptor varies from the upstream part to the downstream part of the source gas flow. In this structure, the decomposition ratio of the source gas is uniform over the wafer surface whereby the uniformity of the composition distribution in the film grown on the wafer is improved, increasing production yield.

摘要翻译： 用于在晶片上生长具有所需组成比的化合物半导体膜的CVD装置包括用于向流过晶片的源气体供热的热源，以消除源气体的温度梯度。 热源可以是具有中空部分的基座，使得基座的热容量从源气体流的上游部分到下游部分变化。 在这种结构中，源气体的分解比在晶片表面上是均匀的，由此提高了在晶片上生长的膜中的组成分布的均匀性，从而提高了产率。

公开(公告)号：US5363800A

公开(公告)日：1994-11-15

申请号：US973505

申请日：1992-11-09

申请人： David J. Larkin ,  Powell, J. Anthony

发明人： David J. Larkin ,  Powell, J. Anthony

IPC分类号： H01L21/36 ,  H01L21/365 ,  H01L21/306 ,  H01L21/20

CPC分类号： H01L21/02529 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S117/913 ,  Y10S148/148 ,  Y10S148/168 ,  Y10S438/931

摘要： This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

摘要翻译： 本发明是一种用于在具有低倾角的邻近（0001）SiC晶片上SiC多型体的单晶半导体器件质量膜的受控生长的方法。 同质外延和异质外延SiC薄膜均可在同一晶圆上制造。 特别地，可以在相同6H-SiC晶片的选定区域内制造3C-SiC和6H-SiC膜。

公开(公告)号：US5296087A

公开(公告)日：1994-03-22

申请号：US988006

申请日：1992-12-09

申请人： Hiroyuki Tokunaga

发明人： Hiroyuki Tokunaga

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L21/365 ,  C30B25/12

CPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/02422 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S117/902

摘要： A crystal formation method is disclosed which is a crystal growth method comprising feeding two or more kinds of reactive starting gases alternately into a crystal formation treatment space having a substrate with a non-nucleation surface (S.sub.NDS) having small nucleation density and a nucleation surface (S.sub.NDL) having sufficiently small area for crystal growth only from a single nucleus, and larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) being arranged adjacent to each other arranged therein, thereby permitting a monocrystal to grow selectively from said single nucleus, characterized in that when one of the starting gases is changed over to the other starting gas, the reaction vessel is once evacuated internally to 10.sup.-2 Torr or less.

摘要翻译： 公开了一种晶体生长方法，其包括将两种或更多种反应性起始气体交替地进料到具有具有小成核密度和成核表面的非成核表面（SNDS）的基底的晶体形成处理空间中 SNDL）具有足够小的面积用于仅从单个核的晶体生长，并且比所述非成核表面（SNDS）的成核密度（NDS）更大的成核密度（NDL）被布置在彼此相邻的位置，从而允许 单晶从所述单个核选择性地生长，其特征在于，当其中一个起始气体转换到另一个起始气体时，反应容器一度在内部抽空至10-2乇或更小。