公开(公告)号：US20190385851A1

公开(公告)日：2019-12-19

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US20190189506A1

公开(公告)日：2019-06-20

申请号：US16224337

申请日：2018-12-18

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/324 ,  H01L21/3105

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

公开(公告)号：US20190013202A1

公开(公告)日：2019-01-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials,Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  H01L21/3213 ,  C23F1/00

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10083834B2

公开(公告)日：2018-09-25

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20170207087A1

公开(公告)日：2017-07-20

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US20240194757A1

公开(公告)日：2024-06-13

申请号：US18383182

申请日：2023-10-24

Applicant: Applied Materials, Inc.

Inventor： Sai Hooi Yeong ,  Liu Jiang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  El Mehdi Bazizi ,  Benjamin Colombeau

IPC: H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L21/823807 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/78696

Abstract: Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices and multilayer inner spacers for GAA devices are described. The multilayer inner spacer comprises an inner layer, a middle layer, and an outer layer within a superlattice structure formed on a top surface of a substrate. The superlattice structure has a plurality of semiconductor material layers (e.g., silicon germanium (SiGe)) and a corresponding plurality of channel layers (e.g., silicon (Si)) alternatingly arranged in a plurality of stacked pairs. In some embodiments, the methods are performed in situ in an integrated deposition and etch processing system.

公开(公告)号：US20240120193A1

公开(公告)日：2024-04-11

申请号：US17960569

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Shankar Venkataraman ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Lakmal C. Kalutarage ,  Jongbeom Seo ,  Sai Hooi Yeong ,  Benjamin Colombeau ,  Balasubramanian Pranatharthiharan

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/02126 ,  H01L21/0206 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31116 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/42392

Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.

公开(公告)号：US20240105499A1

公开(公告)日：2024-03-28

申请号：US17954565

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Xinke Wang ,  Xiang Ji ,  Praket Prakash Jha

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/7688

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.

公开(公告)号：US20230407468A1

公开(公告)日：2023-12-21

申请号：US18242082

申请日：2023-09-05

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40 ,  H01L21/768 ,  H01L21/311 ,  C23C16/56 ,  C23C16/455 ,  H01L21/762 ,  H01L21/02

CPC classification number: C23C16/407 ,  H01L21/76837 ,  H01L21/31111 ,  C23C16/56 ,  C23C16/45527 ,  H01L21/76224 ,  H01L21/0228

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

公开(公告)号：US20230402285A1

公开(公告)日：2023-12-14

申请号：US17839809

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0332

Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.