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    ELECTROMAGNETIC SHIELD FOR TESTING INTEGRATED CIRCUITS
    64.
    发明申请
    ELECTROMAGNETIC SHIELD FOR TESTING INTEGRATED CIRCUITS 审中-公开

    公开(公告)号：US20180100876A1

    公开(公告)日：2018-04-12

    申请号：US15838550

    申请日：2017-12-12

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alberto Pagani

    IPC: G01R1/18 ,  G01R31/28 ,  G01R1/073 ,  G01R1/067

    CPC classification number: G01R1/18 ,  G01R1/06772 ,  G01R1/07307 ,  G01R31/2884 ,  G01R31/2886

    Abstract: A probe card includes a number probes. Each probe is adapted to contact a corresponding terminal of a circuit integrated in at least one die of a semiconductor material wafer during a test phase of the wafer. The probes include at least one probe adapted to provide and/or receive a radio frequency test signal to/from the corresponding terminal during the test phase. The probe card further includes at least one electromagnetic shield structure corresponding to the at least one probe adapted to provide and/or receive the radio frequency test signal for the at least partial shielding of an electromagnetic field irradiated by such at least one probe adapted to provide and/or receive the radio frequency test signal.

    INVERSE ELECTROWETTING ENERGY HARVESTING AND SCAVENGING METHODS, CIRCUITS AND SYSTEMS
    66.
    发明申请
    INVERSE ELECTROWETTING ENERGY HARVESTING AND SCAVENGING METHODS, CIRCUITS AND SYSTEMS 审中-公开

    公开(公告)号：US20170317610A1

    公开(公告)日：2017-11-02

    申请号：US15143015

    申请日：2016-04-29

    Applicant: STMicroelectronics S.R.L.

    Inventor： Sara Loi ,  Alberto Pagani

    IPC: H02N1/08

    CPC classification number: H02N1/08

    Abstract: An inverse electrowetting harvesting and scavenging circuit includes a first substrate having first and second surfaces. An electrode is formed proximate the first surface and includes an insulating layer covering a surface of the electrode. An electromechanical systems device includes a moveable mass extending over the first surface of the first substrate that may be displaced relative to the first substrate in three dimensions responsive to external forces applied to the moveable mass. The movable mass includes a moveable electrode and a conductive fluid is positioned between the insulating layer of the electrode and the movable electrode. Energy harvesting and scavenging circuitry is electrically coupled to the moveable electrode the electrode and is configured to provide electrical energy responsive to electrical energy generated by the moveable electrode, conductive fluid and the electrode through the reverse electrowetting phenomena due to movement of the moveable electrode relative to the electrode and to the conductive fluid on top of the electrode.

    System for electrical testing of through-silicon vias (TSVs), and corresponding manufacturing process
    70.
    发明授权
    System for electrical testing of through-silicon vias (TSVs), and corresponding manufacturing process 有权
    硅通孔电气测试系统（TSV）及相应的制造工艺

    公开(公告)号：US09478470B2

    公开(公告)日：2016-10-25

    申请号：US13855321

    申请日：2013-04-02

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alberto Pagani

    IPC: H01L23/58 ,  H01L21/66 ,  H01L21/768 ,  H01L21/74

    CPC classification number: H01L22/34 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14

    Abstract: An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current.

    Abstract translation: 用于制造用于沿垂直方向延伸穿过半导体材料的基底的通孔的电测试的系统的实施例设想将身体中的电测试电路集成以使得能够检测穿通通孔的至少一个电参数 微电子掩埋结构，其限定朝向外部的电连接元件和通孔的埋入端之间的电路径; 集成步骤设想提供沟槽并在沟槽的底部形成掺杂的掩埋区域，其具有与衬底的掺杂相反的掺杂，以便形成半导体结，当正向偏置时限定电路径; 特别地，半导体结具有比横向于垂直方向的水平面中的导电区域的表面的面积小的结面积，使得具有减小的反向饱和电流。

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