摘要:
A material and an associated method of formation. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F1 and F2 with respect to the self-assembling block copolymer is provided. At least one crosslinkable polymer that is miscible with the second block species is provided. The self-assembling block copolymer and the at least one crosslinkable polymer are combined to form a mixture. The mixture having a volume fraction, F3, of the crosslinkable polymer, a volume fraction, F1A, of the first block species, and a volume fraction, F2A, of the second block species is formed. A material having a predefined morphology where the sum of F2A and F3 were preselected is formed.
摘要:
The invention relates to a process for making an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane in the presence of a photosensitive or thermally sensitive base generator.
摘要:
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polyarylene ether.
摘要:
The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.
摘要:
The invention relates to an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a porous dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.
摘要:
The present invention relates to a process for forming a foamed elastomeric polymer. The process involves forming a reverse emulsion of liquid droplets in a continuous liquid phase of polymer precursor and then polymerizing the precursor to entrap uniformly distributed droplets of the liquid in pores formed in the polymer bulk. The liquid in the pores is then removed under supercritical conditions.
摘要:
The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of a hyperbranched polymer and organic polysilica.
摘要:
A material and an associated method of formation. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F1 and F2 with respect to the self-assembling block copolymer is provided. At least one crosslinkable polymer that is miscible with the second block species is provided. The self-assembling block copolymer and the at least one crosslinkable polymer are combined to form a mixture. The mixture having a volume fraction, F3, of the crosslinkable polymer, a volume fraction, F1A, of the first block species, and a volume fraction, F2A, of the second block species is formed. A material having a predefined morphology where the sum of F2A and F3 were preselected is formed.
摘要翻译:一种材料和相关的形成方法。 一种自组装嵌段共聚物,其包括分别以相对于自组装的F 1和F 2的体积分数表征的第一嵌段物质和第二嵌段物质 嵌段共聚物。 提供了与第二嵌段物质混溶的至少一种可交联聚合物。 自组装嵌段共聚物和至少一种可交联聚合物组合形成混合物。 具有第一嵌段物质的可交联聚合物的体积分数F 3 N 3,体积分数F 1 A 1,以及体积分数F 2A SUB>。 预先选择具有预定形态的材料,其中预先选择F 2 A 2和F 3 3之和。
摘要:
Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
摘要:
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.