公开(公告)号：US09238867B2

公开(公告)日：2016-01-19

申请号：US12993361

申请日：2009-05-20

Applicant: Ernst H. A. Granneman ,  Herbert Terhorst

Inventor： Ernst H. A. Granneman ,  Herbert Terhorst

IPC: C30B25/14 ,  C30B29/20 ,  C30B35/00 ,  C23C16/455 ,  C23C16/54 ,  H01L21/677

CPC classification number: C23C16/54 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

Abstract: An atomic layer deposition apparatus for depositing a film in a continuous fashion is described. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas injection channels, whereby the gas injection channels in at least one of the walls, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a series of tunnel segments that—in use—comprise successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. The downward slope of the process tunnel enables gravity to drive the floatingly supported substrates through the successive segments, causing the atomic layer deposition of a film onto the substrates.

Abstract translation: 描述了用于以连续方式沉积膜的原子层沉积设备。 该装置包括向下倾斜的过程隧道，其在输送方向上延伸并且由至少两个隧道壁限定。 两个壁都设置有多个气体注入通道，由此在传送方向上观察的至少一个壁中的气体注入通道连续地连接到第一前体气体源，吹扫气体源，第二前体气体 源和吹扫气体源，以便产生一系列隧道段，其在使用中分别包括含有第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。 过程隧道的向下倾斜使得重力能够通过连续段驱动浮动支撑的衬底，导致原子层将膜沉积到衬底上。

公开(公告)号：US20150380221A1

公开(公告)日：2015-12-31

申请号：US14551537

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Ren Liu ,  John C. Forster ,  Joseph Yudovsky ,  Somesh Khandelwal ,  Kallol Bera ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/56 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/32091 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32605

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with a first set of apertures within an inner electrical center of the blocker plate and smaller apertures around the outer peripheral edge. The apertures can decrease gradually in diameter from the electrical center outward to the peripheral edge or can be in discrete increments with the smallest at the outer peripheral edge.

Abstract translation: 与处理室一起使用的等离子体源组件包括阻挡板，其在阻挡板的内部电气中心内具有第一组孔，并且围绕外周边缘具有较小的孔。 孔径可以从电气中心向外逐渐减小到周边边缘，或者可以在外围边缘处具有最小的离散增量。

公开(公告)号：US20150376786A1

公开(公告)日：2015-12-31

申请号：US14768908

申请日：2014-02-20

Applicant: Joseph YUDOVSKY ,  Kaushal GANGAKHEDKAR ,  Kevin GRIFFIN

Inventor： Joseph Yudovsky ,  Kaushal GANGAKHEDKAR ,  Kevin Griffin

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/455 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4584

Abstract: Gas distribution assemblies and susceptor assemblies made up of a plurality of pie-shaped segments which can be individually leveled, moved or changed. Processing chambers comprising the gas distribution assemblies, the susceptor assemblies and sensors with feedback circuits to adjust the gap between the susceptor and gas distribution assembly are also described. Methods of using the gas distribution assemblies, susceptor assemblies and processing chambers are also described.

Abstract translation: 气体分配组件和基座组件由多个可以单独调平，移动或改变的饼形段组成。 还描述了包括气体分配组件，基座组件和具有用于调节基座和气体分配组件之间的间隙的反馈电路的传感器的处理室。 还描述了使用气体分配组件，基座组件和处理室的方法。

公开(公告)号：US09209011B2

公开(公告)日：2015-12-08

申请号：US13932154

申请日：2013-07-01

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Shigehiro Miura

IPC: B44C1/22 ,  H01L21/02 ,  C23C16/02 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/0206 ,  C23C16/0227 ,  C23C16/45551 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32862

Abstract: A method of operating a film deposition apparatus including a turntable provided in a vacuum chamber and configured to rotate a substrate mounted thereon, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation area, a first vacuum evacuation port for mainly evacuating the first reaction gas, a second vacuum evacuation port for mainly evacuating the second reaction gas, and a cleaning gas supplying portion for supplying a cleaning gas to clean the turntable, the method includes a cleaning step of supplying the cleaning gas from the cleaning gas supplying portion into the vacuum chamber while terminating the evacuation from the first vacuum evacuation port and performing the evacuation from the second vacuum evacuation port.

Abstract translation: 一种操作成膜装置的方法，所述成膜装置包括设置在真空室中的转盘，用于旋转安装在其上的基板，第一反应气体供应部分，第二反应气体供应部分，分离区域，主要的第一真空排气口 排出第一反应气体，用于主要排出第二反应气体的第二真空排气口和用于供应清洁气体以清洁转台的清洁气体供应部分，该方法包括从清洁气体供应清洁气体的清洁步骤 在从第一真空排气口终止抽真空并且从第二真空排气口排出的同时将真空室供给到真空室中。

公开(公告)号：US20150329964A1

公开(公告)日：2015-11-19

申请号：US14707663

申请日：2015-05-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Takahito UMEHARA ,  Takehiro KASAMA ,  Tsubasa WATANABE

IPC: C23C16/455

CPC classification number: C23C16/45591 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578

Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.

Abstract translation: 提供一种成膜装置，包括：原料气体喷嘴，其设置有用于排出原料气体和载气的混合气体的气体排出孔; 沿着原料气体喷嘴的长度方向延伸的流量调节板部; 中央区域，被构造成将分离气体从真空容器内的中心侧朝向旋转台的基板装载面供给; 从气体排出孔朝向旋转台的中心侧移动的位置从流量调节板部向旋转台突出的突起部; 以及突起部，其构造成限制分离气体在流量调节板部分和旋转台之间流动; 以及排气口，其构造成真空排出真空容器的内部。

公开(公告)号：US20150322568A1

公开(公告)日：2015-11-12

申请号：US14700593

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Inventor： Takeshi KUMAGAI ,  Muneyuki OTANI

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/06 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/4584

Abstract: A method of depositing a continuous TiN film on a substrate is provided. In the method, a continuous TiO2 film is deposited on a substrate, and then a continuous TiN film is deposited on the continuous TiO2 film. The TiN film is thicker than the TiO2 film.

Abstract translation: 提供了一种在衬底上沉积连续TiN膜的方法。 在该方法中，在基板上沉积连续的TiO 2膜，然后在连续的TiO 2膜上沉积连续的TiN膜。 TiN膜比TiO 2膜厚。

公开(公告)号：US20150259793A1

公开(公告)日：2015-09-17

申请号：US14645258

申请日：2015-03-11

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Samuel S. Pak ,  Daniel Ho Lee ,  Hyoseok Daniel Yang

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45551 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862

Abstract: Embodiments relate to a deposition device that operates in two modes: a deposition mode, and a cleaning mode. In the deposition mode, modular injectors inject materials onto a substrate to form a layer. In the cleaning mode, the deposition device is cleaned without disassembly by injecting a cleaning gas. The injector module assembly may be cleaned in the cleaning mode by injecting cleaning gas through an exhaust for removing reactant precursor and routing the cleaning gas from the exhaust to another exhaust for removing source precursor. Alternatively, the injector module assembly is cleaned by injecting cleaning gas into a passage between an injector for injecting a source precursor and another injector for injecting a reactant precursor, and routing the cleaning gas to one of the exhausts in the cleaning mode.

Abstract translation: 实施例涉及以两种模式操作的沉积装置：沉积模式和清洁模式。 在沉积模式下，模块化注射器将材料注入到基底上以形成层。 在清洁模式中，通过注入清洁气体而不拆卸清洁沉积装置。 注射器模块组件可以在清洁模式下通过用于除去反应物前体的排气注入清洁气体并将清洁气体从排气引导到用于除去源前体的另一排气来清洁。 或者，通过将清洁气体注入到用于注射源前体的注射器和用于注入反应物前体的另一个注射器之间的通道中，并且以清洁模式将清洁气体路由到排气中的一个通道来清洁喷射器模块组件。

公开(公告)号：US20150211124A1

公开(公告)日：2015-07-30

申请号：US14416418

申请日：2013-04-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa Nozawa ,  Masahide Iwasaki ,  Toshihiko Iwao

IPC: C23C16/511 ,  C23C16/455

CPC classification number: C23C16/511 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32834

Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract translation: 提供一种成膜装置，其包括放置台; 一个处理容器，其限定容纳所述放置台的处理室，并且包括第一区域和第二区域; 气体供给部，其将前体气体供给到所述第一区域; 以及在第二区域中产生反应性气体的等离子体的等离子体产生部。 等离子体产生部分包括：至少一个波导，其限定放置台上方和第二区域上方的波导路径，连接到至少一个波导的微波发生器和由电介质材料制成的多个突起。 突起穿过形成在至少一个波导的下导电部分中的多个开口以延伸到第二区域。 突起相对于放置台的轴线在径向方向上排列。

公开(公告)号：US20150203965A1

公开(公告)日：2015-07-23

申请号：US14591245

申请日：2015-01-07

Applicant: Tokyo Electron Limited

Inventor： Tadashi ENOMOTO ,  Kiichi TAKAHASHI ,  Keiichi TANAKA

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/67748 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771

Abstract: A vacuum processing apparatus is configured to include a process chamber, a turntable provided in the process chamber, and a substrate receiving area provided in one surface of the turntable and including a regulation part formed therearound to regulate a position of a substrate. A transfer mechanism is provided outside the process chamber, and a lifting member is configured to support the substrate and to move up and down in order to transfer the substrate between the transfer mechanism and the turntable. An exhaust mechanism is configured to selectively evacuate a gap between the substrate receiving area and the substrate before the lifting member places the substrate on the substrate receiving area.

Abstract translation: 真空处理装置被配置为包括处理室，设置在处理室中的转台和设置在转台的一个表面中的基板接收区域，并且包括在其周围形成的调节部分以调节基板的位置。 传送机构设置在处理室外部，并且提升构件被构造成支撑基板并且上下移动，以便在传送机构和转台之间传送基板。 排气机构构造成在提升构件将基板放置在基板接收区域之前选择性地排空基板接收区域和基板之间的间隙。

公开(公告)号：US20150176124A1

公开(公告)日：2015-06-25

申请号：US14135266

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Khaled Ahmed ,  Chen-An Chen ,  Wenxian Zhu

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45551

Abstract: Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant.

Abstract translation: 公开了使用分段空间ALD快速产生ALD饱和曲线的系统和方法。 方法包括将具有多个衬底段区域的衬底引入处理室。 衬底可以设置在腔室内的基座上。 在第一处理温度下将多个区段区域顺序暴露于室内的前体。 然后，从室中吹扫前体，然后在第一处理温度下将每个多个区段顺序地暴露于室内的反应物。 之后，从反应室中清除反应物。 重复连续暴露多个段区域到前体和反应物多个循环。 每个段区域可以顺序地暴露于前体以获得独特的处理时间。 在将每个下一个区段暴露于前体和反应物之前，基座可以旋转。