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    INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS
    61.
    发明申请
    INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS 审中-公开
    用于生物和化学分析的集成传感器阵列

    公开(公告)号：US20150197797A1

    公开(公告)日：2015-07-16

    申请号：US14599948

    申请日：2015-01-19

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： Jonathan M. ROTHBERG ,  James BUSTILLO ,  Mark James MILGREW ,  Jonathan SCHULTZ ,  David MARRAN ,  Todd REARICK ,  Kim L. JOHNSON

    IPC: C12Q1/68 ,  G01N27/414

    CPC classification number: G01N27/4145 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N27/4148 ,  H01L21/82 ,  C12Q2565/607

    Abstract: An apparatus comprising a chemical field effect transistor array in a circuit-supporting substrate is disclosed. The transistor array has disposed on its surface an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid. The transistor array has a pitch of 10 μm or less and a sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region.

    Abstract translation: 公开了一种在电路支撑衬底中包括化学场效应晶体管阵列的装置。 晶体管阵列在其表面上设置有能够从样品流体中保留化学或生物样品的样品保持区阵列。 晶体管阵列具有10μm或更小的间距，并且样品保持区位于至少一个化学场效应晶体管上，该化学场效应晶体管被配置为产生与该样品中的化学或生物样品的特征相关的至少一个输出信号 - 区域。

    METHOD AND APPARATUS FOR VAPOR SIGNATURE WITH HEAT DIFFERENTIAL
    62.
    发明申请
    METHOD AND APPARATUS FOR VAPOR SIGNATURE WITH HEAT DIFFERENTIAL 审中-公开
    具有热差分的蒸汽标记的方法和装置

    公开(公告)号：US20150168327A1

    公开(公告)日：2015-06-18

    申请号：US14523912

    申请日：2014-10-26

    Applicant: Sensorbit Systems, Inc.

    Inventor： Klaus Dimmler ,  Thomas Moss, III

    IPC: G01N27/14 ,  G01N33/00

    CPC classification number: G01N27/14 ,  G01N27/414 ,  G01N27/4148 ,  G01N33/00 ,  G01N33/0009

    Abstract: A method for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, selectively heating one or more of the sensor array columns by a heating element, and receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array.

    Abstract translation: 一种感测分析物的方法。 该方法包括以下步骤：响应于一种或多种分析物的存在而检测一个或多个参数，并根据多个传感器中的每一个传感器的感测参数的电平输出电流，多个传感器中的每一个被提供 在一个或多个传感器阵列列中，通过加热元件选择性地加热一个或多个传感器阵列，并且通过压控振荡器（VCO）从多个传感器阵列中的每一个接收来自多个传感器中的一个的输出电流 ）排列在VCO阵列中。 该方法还包括以下步骤：根据接收到的输出电流的电平，通过每个VCO产生输出振荡频率，并且在从VCO阵列中的多个VCO中的每一个接收到的预定时间内计数一个振荡次数 多个计数器布置在计数器阵列中。

    BIOSENSING WELL ARRAY WITH PROTECTIVE LAYER
    64.
    发明申请
    BIOSENSING WELL ARRAY WITH PROTECTIVE LAYER 有权
    生物传感器保护层阵列

    公开(公告)号：US20150084099A1

    公开(公告)日：2015-03-26

    申请号：US14033089

    申请日：2013-09-20

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Shih-Wei Lin ,  Chun-Ren Cheng

    IPC: G01N27/414

    CPC classification number: G01N27/4145 ,  G01N27/4148

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET包括具有感测层的微孔，感测层下的顶部金属堆叠，以及在顶部金属堆叠下的多层互连（MLI）。 顶部金属堆叠包括顶部金属和保护层，并且围绕顶部金属周围。

    Backside stimulated sensor with background current manipulation
    65.
    发明授权
    Backside stimulated sensor with background current manipulation 有权
    带背景电流操作的背面刺激传感器

    公开(公告)号：US08987841B2

    公开(公告)日：2015-03-24

    申请号：US14205203

    申请日：2014-03-11

    Applicant: Omnivision Technologies, Inc.

    Inventor： Manoj Bikumandla ,  Dominic Massetti

    IPC: H01L27/146 ,  G01N27/26 ,  G01N27/414

    CPC classification number: G01N27/4148 ,  G01N27/4145

    Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

    Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

    Method of fabricating a capacitive environment sensor
    67.
    发明授权
    Method of fabricating a capacitive environment sensor 有权
    制造电容式环境传感器的方法

    公开(公告)号：US08852983B1

    公开(公告)日：2014-10-07

    申请号：US13896818

    申请日：2013-05-17

    Applicant: Carnegie Mellon University

    Inventor： Gary Keith Fedder ,  Nathan Scott Lazarus

    IPC: H01L21/00

    CPC classification number: G01N27/4141 ,  B81B2201/0214 ,  B81C1/00246 ,  B81C2203/0714 ,  C23F1/20 ,  G01N27/226 ,  G01N27/4148 ,  H01L28/60

    Abstract: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

    Abstract translation: 提供了一种用于制造电容式环境传感器的方法，其中传感器元件通过使用互补金属氧化物半导体（CMOS）制造方法集成在具有电子学的CMOS结构中。 还提供了例如通过该方法制造的环境传感器，以及使用通过该方法制造的环境传感器的测量系统。 所描述的方法包括蚀刻掉CMOS芯片中的一个金属层以形成空腔。 然后用环境敏感介电材料填充该空腔，以在由金属粘附层形成的板之间形成感测电容器，或者由CMOS结构的其它金属层形成的触点阵列。 这种方法在易于制造的系统中提供改进的感测能力。

    Biological and Chemical Sensors
    68.
    发明申请
    Biological and Chemical Sensors 有权
    生物和化学传感器

    公开(公告)号：US20140225166A1

    公开(公告)日：2014-08-14

    申请号：US13767024

    申请日：2013-02-14

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Derrick Liu

    IPC: G01N27/414 ,  H01L29/66

    CPC classification number: G01N27/414 ,  G01N27/4145 ,  G01N27/4148 ,  H01L29/66477

    Abstract: Device structures, fabrication methods, and design structures for a biological and chemical sensor used to detect a property of a substance. The device structure includes a drain and a source of a field effect transistor formed at a frontside of a substrate. A sensing layer is formed at a backside of the substrate. The sensing layer is configured to receive the substance.

    Abstract translation: 用于检测物质性质的生物和化学传感器的装置结构，制造方法和设计结构。 器件结构包括形成在衬底前侧的场效应晶体管的漏极和源极。 感光层形成在基板的背面。 感测层被配置为接收物质。

    Electrochemical potentiometric sensing without reference electrode
    69.
    发明授权
    Electrochemical potentiometric sensing without reference electrode 有权
    无参考电极的电化学电位传感

    公开(公告)号：US08801917B2

    公开(公告)日：2014-08-12

    申请号：US13061110

    申请日：2009-08-24

    Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

    Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

    IPC: G01N27/327

    CPC classification number: G01N27/4148 ,  G01N27/4145

    Abstract: The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.

    Abstract translation: 本发明涉及一种测定分析物（100）中带电粒子浓度的方法，所述方法包括以下步骤：i）确定表面电位对界面温度曲线（c1，c2，c3，c3）的至少两个测量点， c4），其中所述界面温度是由第一离子敏感电介质（Fsd）和分析物（100）之间的第一界面与第二离子敏感电介质（Ssd）与分析物之间的第二界面 （100），并且其中所述表面电位由所述第一离子敏感电介质（Fsd）和所述第二离子敏感电介质（Ssd）上的第一电极（Fe）和第二电极（Se）之间的电位差获得， ），和ii）从所述曲线（c1，c2，c3，c4）的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器，即EGFET和EIS电容器。

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