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    WIDE DYNAMIC RANGE ION ENERGY BIAS CONTROL; FAST ION ENERGY SWITCHING; ION ENERGY CONTROL AND A PULSED BIAS SUPPLY; AND A VIRTUAL FRONT PANEL
    61.
    发明申请
    WIDE DYNAMIC RANGE ION ENERGY BIAS CONTROL; FAST ION ENERGY SWITCHING; ION ENERGY CONTROL AND A PULSED BIAS SUPPLY; AND A VIRTUAL FRONT PANEL 有权
    宽动态范围离子能量偏差控制; 快速离子能量切换 离子能量控制和脉冲偏置电源; 和一个虚拟的前面板

    公开(公告)号：US20140061156A1

    公开(公告)日：2014-03-06

    申请号：US14011305

    申请日：2013-08-27

    Applicant: Advanced Energy Industries, Inc.

    Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter ,  Dmitri Kovalevskii

    IPC: H01J37/24

    CPC classification number: H01J37/32091 ,  H01J37/241 ,  H01J37/32146

    Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

    Abstract translation: 本公开描述了用于操作等离子体处理室的系统，方法和装置。 特别地，可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压，该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量，而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

    GLITCH CONTROL DURING IMPLANTATION
    64.
    发明申请
    GLITCH CONTROL DURING IMPLANTATION 有权
    植入过程中的控制

    公开(公告)号：US20120003760A1

    公开(公告)日：2012-01-05

    申请号：US13160573

    申请日：2011-06-15

    Applicant: Piotr Lubicki ,  Bon-Woong Koo

    Inventor： Piotr Lubicki ,  Bon-Woong Koo

    IPC: H01L21/66 ,  G21K5/00

    CPC classification number: H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535

    Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

    Abstract translation: 公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。 通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。 例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

    POWER SUPPLY FOR ELECTRON GUN AND ELECTRON MICROSCOPE HAVING THE SAME
    66.
    发明申请
    POWER SUPPLY FOR ELECTRON GUN AND ELECTRON MICROSCOPE HAVING THE SAME 审中-公开
    具有电子枪和电子显微镜的电源

    公开(公告)号：US20100252734A1

    公开(公告)日：2010-10-07

    申请号：US12675855

    申请日：2008-08-20

    Applicant: Heung-Bok Kim ,  Kyeong-Il Kwak ,  Byung-Chul Jeon ,  Jong-Hyun Kim

    Inventor： Heung-Bok Kim ,  Kyeong-Il Kwak ,  Byung-Chul Jeon ,  Jong-Hyun Kim

    IPC: H01J37/28 ,  H01J29/48

    CPC classification number: H01J37/241 ,  H01J37/242 ,  H01J37/243 ,  H01J37/28 ,  H01J2237/2485

    Abstract: A power supply for supplying an electric power to an electron gun, which is used in an electron microscope, and an electron microscope having the same are disclosed. The power supply includes a base board, and at least one sub-board vertically mounted on the base board to supply an electric power to an anode electrode, a filament for emitting electrons, and a grid. The at least one sub-board can include a first sub-board to supply an accelerating voltage to the anode electrode, a second sub-board to supply a heating current to the filament, and a third sub-board to supply a grid voltage to the grid.

    Abstract translation: 公开了一种用于向电子显微镜中使用的电子枪供电的电源和具有该电源的电子显微镜。 电源包括基板和垂直安装在基板上的至少一个子板，以向阳极电极提供电力，用于发射电子的灯丝和电网。 所述至少一个子板可以包括用于向所述阳极电极提供加速电压的第一子板，向所述灯丝供应加热电流的第二子板，以及向所述第一子板提供电网电压的第三子板 电网。

    System and method of ion beam control in response to a beam glitch
    67.
    发明授权
    System and method of ion beam control in response to a beam glitch 有权
    响应于光束毛刺的离子束控制的系统和方法

    公开(公告)号：US07507977B2

    公开(公告)日：2009-03-24

    申请号：US11441609

    申请日：2006-05-26

    Applicant: Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    Inventor： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    IPC: G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

    Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

    Abstract translation: 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

    Electron beam apparatus having electron analyzer and method of controlling lenses
    68.
    发明授权
    Electron beam apparatus having electron analyzer and method of controlling lenses 有权
    具有电子分析仪的电子束装置和控制透镜的方法

    公开(公告)号：US07030389B2

    公开(公告)日：2006-04-18

    申请号：US10764136

    申请日：2004-01-23

    Applicant: Toshikatsu Kaneyama

    Inventor： Toshikatsu Kaneyama

    IPC: G01K1/08 ,  G01N23/00 ,  G21K7/00

    CPC classification number: H01J37/05 ,  H01J37/241 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/24485

    Abstract: An electron beam apparatus having an electron analyzer is achieved which can control the illumination lens system by feedback without adversely affecting the imaging action even if a specimen is positioned within the magnetic field of the objective lens. The apparatus has an energy shift control module for controlling energy shift. On receiving instructions about setting of energy shift from the CPU, the control module issues an instruction for shifting the accelerating voltage to a specified value to an accelerating-voltage control module. The control module also sends information about the energy shift to an energy shift feedback control module, which calculates the feedback value and supplies information about corrections of lenses and deflection coils to a TEM optics control module. The feedback value is multiplied by a corrective coefficient that can be calibrated.

    Abstract translation: 实现了具有电子分析器的电子束装置，其可以通过反馈来控制照明透镜系统，而不会对成像动作产生不利影响，即使样本位于物镜的磁场内。 该装置具有用于控制能量偏移的能量转换控制模块。 在接收到关于从CPU设置能量偏移的指令时，控制模块发出用于将加速电压移动到指定值的指令到加速电压控制模块。 控制模块还将能量偏移的信息发送到能量偏移反馈控制模块，该能量偏移反馈控制模块计算反馈值，并将关于透镜和偏转线圈校正的信息提供给TEM光学控制模块。 反馈值乘以可校准的校正系数。

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