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公开(公告)号：US20240355955A1
公开(公告)日：2024-10-24
申请号：US18637314
申请日：2024-04-16
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Takuma YAJIMA , Yusaku FUJII
CPC classification number: H01L33/0012 , H01L33/0066 , H01L33/56 , H01L2933/005
Abstract: A light emitting element includes an element main body and a sapphire substrate 90. The element main body has an AlGaAs-based semiconductor layer 50, an n-type current diffusion layer 60, and a cap layer 70 of an InGa-based semiconductor that does not contains As as a component in a lamination direction. The amorphous layer 80 is interposed between the element main body and the sapphire substrate 90, and contains constituent elements of the cap layer 70 and the sapphire substrate 90 as components.
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公开(公告)号：US20240304758A1
公开(公告)日：2024-09-12
申请号：US18264606
申请日：2022-02-02
Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Inventor： Bruno DAUDIN , Gwenole JACOPIN
CPC classification number: H01L33/325 , H01L27/156 , H01L33/0012 , H01L33/0075 , H01L33/025
Abstract: A method for producing a display device comprising several pixels. The production of each pixel includes producing a stack forming p-i-n junctions of semiconductors corresponding to compounds comprising nitrogen and aluminium and/or gallium and/or indium atoms; implanting first, second and third rare earth ions respectively in first, second and third parts of a nest portion, through masks comprising first, second and third openings disposed respectively facing first, second and third regions of the stack respectively forming first, second and third light emission regions.
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公开(公告)号：US11811001B2
公开(公告)日：2023-11-07
申请号：US18051019
申请日：2022-10-31
Applicant: Lextar Electronics Corporation
Inventor： Jih-Kang Chen , Shih-Wei Yang
CPC classification number: H01L33/145 , H01L33/46 , H01L33/52 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L2933/0016 , H01L2933/0025
Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.
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公开(公告)号：US11804586B2
公开(公告)日：2023-10-31
申请号：US17844606
申请日：2022-06-20
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert
CPC classification number: H01L33/62 , H01L27/153 , H01L31/02005 , H01L31/03044 , H01L31/03048 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
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公开(公告)号：US11764332B2
公开(公告)日：2023-09-19
申请号：US17712690
申请日：2022-04-04
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Tsung-Hsun Chiang , Bo-Jiun Hu , Wen-Hung Chuang , Yu-Ling Lin
IPC: H01L33/10 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/62 , H01L33/22 , H01L33/44 , H01L33/00 , H01L33/46 , H01L33/02 , H01L33/08 , H01L33/40
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02 , H01L33/08 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wherein a spacing between two adjacent vias in the first row is different from a spacing between two adjacent vias in the second row.
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Patent Agency Ranking
公开(公告)号：US20230207727A1
公开(公告)日：2023-06-29
申请号：US17886794
申请日：2022-08-12
Applicant: Kabushiki Kaisha Toshiba
Inventor： Andrea BARBIERO , Joanna Krystyna SKIBA-SZYMANSKA , Richard Mark STEVENSON , Andrew James SHIELDS
CPC classification number: H01L33/105 , H01L33/06 , H01L33/0062 , H01L33/20 , H01L33/0012 , H01L33/305
Abstract: A photon source comprising:
a quantum dot; and an optical cavity,
the optical cavity comprising:
a diffractive Bragg grating “DBG”; and
a planar reflection layer,
the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.-
公开(公告)号：US20180108804A1
公开(公告)日：2018-04-19
申请号：US15689230
申请日：2017-08-29
Applicant: Kabushiki Kaisha Toshiba
Inventor： David Julian Peter ELLIS , James LEE , Anthony John BENNETT , Andrew James SHIELDS
CPC classification number: H01L33/06 , H01L27/15 , H01L33/0012 , H01L33/08 , H01L33/105 , H01L33/502 , H01S5/3412 , H01S5/3416 , H04B10/548 , H04B10/70
Abstract: A photon source, comprising: a semiconductor structure, said semiconductor structure comprising: a first light emitting diode region; and a second region comprising a quantum dot; the photon source further comprising: a first voltage source configured to apply an electric field across said first light emitting diode region to cause light emission; a second voltage source configured to apply a tuneable electric field across said second region to control the emission energy of said quantum dot; wherein the semiconductor structure is configured such that light emitted from said first light emitting diode region is absorbed in said second region and produces carriers to populate said quantum dot; and wherein the photon source is configured such that light emitted from the second region exits said photon source.
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公开(公告)号：US09837583B2
公开(公告)日：2017-12-05
申请号：US14591627
申请日：2015-01-07
Applicant: Mordehai Margalit
Inventor： Mordehai Margalit
IPC: H01L33/50 , H01L33/38 , H01L33/64 , H01L33/62 , H01L33/00 , H01L33/56 , H01L33/40 , H01L33/44 , H01L33/32 , H01L33/58 , H01L33/52 , H01L33/60
CPC classification number: H01L33/502 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/44 , H01L33/50 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/647 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.
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公开(公告)号：US09774167B2
公开(公告)日：2017-09-26
申请号：US15281785
申请日：2016-09-30
Inventor： Alban Gassenq , Vincent Reboud , Kevin Guilloy , Vincent Calvo , Alexei Tchelnokov
IPC: H01L21/70 , H01L21/02 , H01L33/00 , H01S5/32 , H01S5/12 , H01L33/10 , H01L33/26 , H01L29/78 , H01L29/10 , H01L33/20 , H01L21/8234
CPC classification number: H01S5/3201 , H01L21/02002 , H01L21/0245 , H01L21/02532 , H01L21/823412 , H01L29/1054 , H01L29/7842 , H01L33/0008 , H01L33/0012 , H01L33/0054 , H01L33/0095 , H01L33/105 , H01L33/20 , H01L33/26 , H01L2924/01032 , H01L2924/3511 , H01S5/021 , H01S5/0216 , H01S5/0217 , H01S5/12 , H01S5/125 , H01S5/3031 , H01S5/3223
Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.
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公开(公告)号：US09711701B2
公开(公告)日：2017-07-18
申请号：US15082764
申请日：2016-03-28
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert
CPC classification number: H01L33/62 , H01L27/153 , H01L31/02005 , H01L31/03044 , H01L31/03048 , H01L33/0012 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
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