Methods utilizing scanning probe microscope tips and products therefor or produced thereby
    62.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
    方法利用扫描探针显微镜尖端及其产品或由此产生

    公开(公告)号:US07524534B2

    公开(公告)日:2009-04-28

    申请号:US10937877

    申请日:2004-09-10

    IPC分类号: B05D1/26

    摘要: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN), which utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid-state substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging preformed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译: 本发明提供一种称为“浸笔”纳米光刻(DPN)的光刻方法,其使用扫描探针显微镜(SPM)尖端(例如,原子力显微镜(AFM)尖端)作为“笔”,固态 衬底(例如,金)作为“纸”,以及对固态衬底具有化学亲和力的分子作为“油墨”。 在DPN中使用分子从SPM尖端到固态基底的毛细管转运,以直接写入由亚微米尺寸的相对小的分子集合组成的图案,使得DPN可用于制造各种微米级和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底,包括亚微米组合阵列,以及用于执行DPN的试剂盒,装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水化合物涂覆AFM尖端,选择疏水性化合物,使得与使用未涂覆的AFM尖端预成型的AFM成像相比,使用涂覆的AFM尖端进行的AFM成像得到改善。 最后,本发明提供涂覆有疏水化合物的AFM尖端。

    ETCHING AND HOLE ARRAYS
    64.
    发明申请
    ETCHING AND HOLE ARRAYS 失效
    蚀刻和孔阵列

    公开(公告)号:US20080182079A1

    公开(公告)日:2008-07-31

    申请号:US11770477

    申请日:2007-06-28

    IPC分类号: B32B5/00 C23F1/00

    摘要: Lithographic and nanolithographic methods that involve patterning a first compound on a substrate surface, exposing non-patterned areas of the substrate surface to a second compound and removing the first compound while leaving the second compound intact. The resulting hole patterns can be used as templates for either chemical etching of the patterned area of the substrate or metal deposition on the patterned area of the substrate.

    摘要翻译: 包括在基底表面上图案化第一化合物的平版印刷和纳米光刻方法,将基底表面的未图案化区域暴露于第二化合物并除去第一化合物同时保留第二化合物。 所得到的孔图案可以用作用于对衬底的图案化区域进行化学蚀刻或在衬底的图案化区域上的金属沉积的模板。

    REACTION CHAMBER FOR MANUFACTURING A CARBON NANOTUBE, APPARATUS FOR MANUFACTURING THE CARBON NANOTUBE AND SYSTEM FOR MANUFACTURING THE CARBON NANOTUBE
    65.
    发明申请
    REACTION CHAMBER FOR MANUFACTURING A CARBON NANOTUBE, APPARATUS FOR MANUFACTURING THE CARBON NANOTUBE AND SYSTEM FOR MANUFACTURING THE CARBON NANOTUBE 有权
    用于制造碳纳米管的反应室,用于制造碳纳米管的装置和用于制造碳纳米管的系统

    公开(公告)号:US20080152554A1

    公开(公告)日:2008-06-26

    申请号:US11764344

    申请日:2007-06-18

    IPC分类号: B01J19/02

    摘要: Disclosed are a reaction chamber for manufacturing a carbon nanotube, an apparatus for manufacturing a carbon nanotube and a system for manufacturing a carbon nanotube. The reaction chamber includes a reaction furnace, a gas inlet, a gas outlet and a heat transfer member. The reaction furnace has a box structure for receiving a substrate wherein the reaction furnace provides a space for forming the carbon nanotube on the substrate. The gas inlet having a through-hole structure formed at a first portion of the reaction furnace and the gas outlet has a through-hole structure formed at a second portion of the reaction furnace. The heat transfer member has at least one rectangular through-hole structure formed at a third portion of the reaction furnace along a direction substantially in parallel to the substrate. The apparatus includes the reaction furnace, a gas supply member, a gas exhausting member and a heating member. The system includes the apparatus and a transfer apparatus.

    摘要翻译: 公开了用于制造碳纳米管的反应室,碳纳米管的制造装置和碳纳米管的制造系统。 反应室包括反应炉,气体入口,气体出口和传热构件。 反应炉具有用于接收基板的盒结构,其中反应炉提供在基板上形成碳纳米管的空间。 具有在反应炉的第一部分形成的通孔结构的气体入口和气体出口在反应炉的第二部分形成有通孔结构。 传热构件具有至少一个矩形通孔结构,其沿着基本上平行于基底的方向在反应炉的第三部分形成。 该装置包括反应炉,气体供给构件,排气构件和加热构件。 该系统包括装置和传送装置。

    Thermal interface material with carbon nanotubes
    67.
    发明授权
    Thermal interface material with carbon nanotubes 有权
    具有碳纳米管的热界面材料

    公开(公告)号:US07253442B2

    公开(公告)日:2007-08-07

    申请号:US11024513

    申请日:2004-12-29

    IPC分类号: H01L31/0312

    摘要: A thermal interface material (40) includes a macromolecular material (32), and a plurality of carbon nanotubes (22) embedded in the macromolecular material uniformly. The thermal interface material includes a first surface (42) and an opposite second surface (44). Each carbon nanotube is open at both ends thereof, and extends from the first surface to the second surface of the thermal interface material. A method for manufacturing the thermal interface material includes the steps of: (a) forming an array of carbon nanotubes on a substrate; (b) submerging the carbon nanotubes in a liquid macromolecular material; (c) solidifying the liquid macromolecular material; and (d) cutting the solidified liquid macromolecular material to obtain the thermal interface material with the carbon nanotubes secured therein.

    摘要翻译: 热界面材料(40)包括高分子材料(32)和均匀地嵌入大分子材料中的多个碳纳米管(22)。 热界面材料包括第一表面(42)和相对的第二表面(44)。 每个碳纳米管在其两端是开放的,并且从热界面材料的第一表面延伸到第二表面。 制造热界面材料的方法包括以下步骤:(a)在基底上形成碳纳米管阵列; (b)将碳纳米管浸没在液体高分子材料中; (c)固化液体高分子材料; 和(d)切割凝固的液体高分子材料以获得固定有碳纳米管的热界面材料。

    Strongly textured atomic ridge nanowindows
    70.
    发明申请
    Strongly textured atomic ridge nanowindows 失效
    强纹理原子岭nanowindows

    公开(公告)号:US20060006376A1

    公开(公告)日:2006-01-12

    申请号:US11226382

    申请日:2005-09-15

    IPC分类号: H01L29/06

    摘要: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

    摘要翻译: 本发明提供一种MOSFET器件,包括:包括多个原子脊的衬底,每个原子脊包括包含Si的半导体层和包含Si化合物的介电层; 在原子脊之间的多个纳米岩; 至少一个位于所述纳米岩中的至少一个的细长分子; 多孔门层位于多个原子脊的顶部。 本发明还提供了一种膜,包括:基材; 以及基板中的多个纳米窗口以及在基板中形成纳米窗口的方法。