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    Silicon oxide recess etch
    71.
    发明授权
    Silicon oxide recess etch 有权
    氧化硅凹槽蚀刻

    公开(公告)号：US08748322B1

    公开(公告)日：2014-06-10

    申请号：US13942950

    申请日：2013-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Nancy Fung ,  David T. Or ,  Qingjun Zhou ,  Lina Zhu ,  Jeremiah T. Pender ,  Srinivas D. Nemani ,  Sean S. Kang ,  Sergey G. Belostotskiy ,  Chinh Dinh

    IPC: H01L21/302

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/67028 ,  H01L21/76229

    Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates across a varying pattern on a patterned substrate. The method also provides a more rectilinear profile following the etch process. Methods include a sequential exposure of gapfill silicon oxide. The gapfill silicon oxide is exposed to a local plasma treatment prior to a remote-plasma dry etch which may produce salt by-product on the surface. The local plasma treatment has been found to condition the gapfill silicon oxide such that the etch process proceeds at a more even rate within each trench and across multiple trenches. The salt by-product may be removed by raising the temperature in a subsequent sublimation step.

    Abstract translation: 描述了从沟槽中蚀刻二氧化硅的方法，其允许跨越图案化衬底上的变化图案的更均匀的蚀刻速率。 该方法还提供了在蚀刻工艺之后的更直线的轮廓。 方法包括间隙填充氧化硅的顺序曝光。 在远程等离子体干蚀刻之前，将间隙填充氧化硅暴露于局部等离子体处理，其可以在表面上产生副产物盐。 已经发现局部等离子体处理可以调节填隙氧化硅的间隙，使得蚀刻过程在每个沟槽内并跨越多个沟槽以更均匀的速率进行。 可以通过在随后的升华步骤中升高温度来除去盐副产物。

    High selectivity atomic later deposition process
    78.
    发明授权
    High selectivity atomic later deposition process 有权

    公开(公告)号：US11664215B2

    公开(公告)日：2023-05-30

    申请号：US16802290

    申请日：2020-02-26

    Applicant: Applied Materials, Inc.

    Inventor： Christopher Ahles ,  Jong Choi ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

    CPC classification number: H01L21/02186 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02205

    Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

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