公开(公告)号：US20060252232A1

公开(公告)日：2006-11-09

申请号：US11410476

申请日：2006-04-24

申请人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

发明人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

IPC分类号： H01L21/00 ,  H01L23/48

CPC分类号： H01L23/3114 ,  H01L21/4828 ,  H01L21/561 ,  H01L23/4951 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02319 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/274 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A circuit device of preferred embodiments of the present invention includes: a circuit element with electrodes formed in a peripheral part thereof; connecting portions connected to surfaces of the electrodes; and redistribution lines which are continuous to the respective connecting portions and extended in parallel to the main surface of the circuit element. In preferred embodiments of the present invention, the connecting portions and the redistribution lines are integrally formed of one piece of metal. Accordingly, there is no place where different materials are connected in a portion between the connecting portions and the redistribution lines, thus improving a joint reliability of the entire device against a thermal stress or the like.

摘要翻译： 本发明的优选实施例的电路装置包括：电路元件，其电极形成在其周边部分中; 与电极表面连接的连接部分; 以及与各连接部连续并且与电路元件的主面平行延伸的再分配线。 在本发明的优选实施例中，连接部分和再分布线由一片金属一体地形成。 因此，在连接部分和再分配线之间的部分中没有不同材料连接的地方，从而提高整个装置对热应力等的接合可靠性。

公开(公告)号：US06989291B2

公开(公告)日：2006-01-24

申请号：US10664209

申请日：2003-09-17

申请人： Yusuke Igarashi ,  Hideki Mizuhara ,  Noriaki Sakamoto

发明人： Yusuke Igarashi ,  Hideki Mizuhara ,  Noriaki Sakamoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L24/45 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H05K1/185 ,  H05K1/187 ,  H05K3/062 ,  H05K3/064 ,  H05K3/20 ,  H05K2203/0376 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

摘要： Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wiring structure cannot be formed and warping of the insulating resin sheet in the manufacturing process is prominent. In order to solve these problems, a laminated plate 10 in which a first conductive film 11 and a second conductive film 12 have been laminated via a third conductive film 13 is used. After forming a conductive pattern layer 11A by etching the first conductive film 11, anchor portions 15 are formed by overetching the third conductive film 13 by use of the conductive pattern layer 11A as a mask, and a sealing resin layer 22 is made to bite into the anchor portions 15 so as to strengthen bonding of the sealing resin layer 22 with the conductive pattern layer 11A.

摘要翻译： 优选地，其中使用具有导电图案的柔性片的半导体器件作为支撑衬底，在其上安装半导体元件，并且已经开发了组合。 在这种情况下，存在无法形成多层布线结构并且在制造工艺中绝缘树脂片翘曲突出的问题。 为了解决这些问题，使用通过第三导电膜13层压了第一导电膜11和第二导电膜12的层压板10。 在通过蚀刻第一导电膜11形成导电图案层11a之后，通过使用导电图案层11A作为掩模，通过使第三导电膜13过蚀刻来形成锚固部分15，并且将密封树脂层22制成 咬入锚定部15，以便加强密封树脂层22与导电图案层11A的接合。

公开(公告)号：US20050272252A1

公开(公告)日：2005-12-08

申请号：US11139036

申请日：2005-05-27

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Yusuke Igarashi ,  Takeshi Nakamura

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Yusuke Igarashi ,  Takeshi Nakamura

IPC分类号： H01L21/4763 ,  H01L23/14 ,  H01L23/31 ,  H01L23/36 ,  H01L23/498 ,  H01L25/16 ,  H05K1/02 ,  H05K1/05 ,  H05K3/28 ,  H05K3/38 ,  H05K3/46

CPC分类号： H05K1/0206 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/05 ,  H05K1/056 ,  H05K3/284 ,  H05K3/382 ,  H05K3/4644 ,  H05K2201/0209 ,  H05K2201/0338 ,  H05K2201/068 ,  H05K2201/096 ,  H05K2203/0315 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015

摘要： Provided is a circuit device capable of inhibiting an insulating layer from separating from a substrate. This circuit device comprises a substrate mainly constituted of metal including a first metal layer having a first thermal expansion coefficient, a second metal layer, formed on the first metal layer, having a second thermal expansion coefficient different from the first thermal expansion coefficient of the first metal layer and a third metal layer, formed on the second metal layer, having a third thermal expansion coefficient different from the second thermal expansion coefficient of the second metal layer, an insulating layer formed on the substrate, a conductive layer formed on the insulating layer and a circuit element electrically connected to the conductive layer.

摘要翻译： 提供了能够抑制绝缘层与基板分离的电路装置。 该电路装置包括主要由金属构成的基板，该基板包括形成在第一金属层上的具有第一热膨胀系数的第一金属层，第二金属层，具有与第一热膨胀系数不同的第二热膨胀系数的第二热膨胀系数 金属层和第三金属层，形成在第二金属层上，具有与第二金属层的第二热膨胀系数不同的第三热膨胀系数，形成在基板上的绝缘层，形成在绝缘层上的导电层 以及与导电层电连接的电路元件。

公开(公告)号：US20050263880A1

公开(公告)日：2005-12-01

申请号：US11139263

申请日：2005-05-27

申请人： Yusuke Igarashi ,  Sadamichi Takakusaki ,  Hideki Mizuhara ,  Ryosuke Usui

发明人： Yusuke Igarashi ,  Sadamichi Takakusaki ,  Hideki Mizuhara ,  Ryosuke Usui

IPC分类号： H05K3/46 ,  H01L21/48 ,  H01L21/50 ,  H01L23/12 ,  H01L23/34 ,  H01L23/373 ,  H01L23/538 ,  H01L25/00 ,  H05K1/02 ,  H05K1/05 ,  H05K3/00 ,  H05K3/28

CPC分类号： H01L23/5383 ,  H01L21/4857 ,  H01L21/4871 ,  H01L23/3735 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K1/0206 ,  H05K1/056 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/4652 ,  H05K3/4688 ,  H05K2201/0209 ,  H05K2201/0266 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A circuit device having a multilayered wiring structure and an excellent heat dissipation property, and a method of manufacturing the circuit device are provided. In a circuit device, a multilayered wiring structure including a first conductive pattern and a second conductive pattern is formed on a surface of a circuit substrate. A first insulating layer is formed entirely on the surface of the circuit substrate. The first conductive pattern and the second conductive pattern are mutually insulated by a second insulating layer. An amount and grain sizes of filler included in the second insulating layer are smaller than an amount and grain sizes of filler included in the first insulating layer. Therefore, it is easier to connect the above two conductive patterns by way of penetrating the second insulating layer.

摘要翻译： 具有多层布线结构和散热性优异的电路装置以及制造该电路装置的方法。 在电路装置中，在电路基板的表面上形成包括第一导电图案和第二导电图案的多层布线结构。 第一绝缘层整体形成在电路基板的表面上。 第一导电图案和第二导电图案由第二绝缘层相互绝缘。 包含在第二绝缘层中的填料的量和晶粒尺寸小于包含在第一绝缘层中的填料的量和晶粒尺寸。 因此，通过穿透第二绝缘层更容易连接上述两个导电图案。

公开(公告)号：US08022533B2

公开(公告)日：2011-09-20

申请号：US11168655

申请日：2005-06-29

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue

IPC分类号： H01L23/34

CPC分类号： H01L24/82 ,  H01L23/142 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/45 ,  H01L24/48 ,  H01L27/013 ,  H01L27/016 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/24145 ,  H01L2224/24146 ,  H01L2224/24195 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3511 ,  H05K1/056 ,  H05K1/162 ,  H05K1/167 ,  H05K1/185 ,  H05K3/382 ,  H05K3/4644 ,  H05K2201/0187 ,  H05K2201/0338 ,  H05K2201/09745 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

摘要： Circuit elements including a plurality of semiconductor devices and passive elements embedded in an insulating resin film are formed on a metal substrate having a surface roughness Ra of 0.3 to 10 μm. This produces an anchoring effect occurs between the substrate and the insulating film, thereby improving the adhesiveness between the substrate and the insulating resin film.

摘要翻译： 在表面粗糙度Ra为0.3〜10μm的金属基材上形成包含多个半导体器件和埋入绝缘树脂膜中的无源元件的电路元件。 这样会在基板和绝缘膜之间产生锚定效应，从而提高基板与绝缘树脂膜之间的粘附性。

公开(公告)号：US07808114B2

公开(公告)日：2010-10-05

申请号：US11410476

申请日：2006-04-24

申请人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

发明人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

IPC分类号： H01L23/52

CPC分类号： H01L23/3114 ,  H01L21/4828 ,  H01L21/561 ,  H01L23/4951 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02319 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/274 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A circuit device of preferred embodiments of the present invention includes: a circuit element with electrodes formed in a peripheral part thereof; connecting portions connected to surfaces of the electrodes; and redistribution lines which are continuous to the respective connecting portions and extended in parallel to the main surface of the circuit element. In preferred embodiments of the present invention, the connecting portions and the redistribution lines are integrally formed of one piece of metal. Accordingly, there is no place where different materials are connected in a portion between the connecting portions and the redistribution lines, thus improving a joint reliability of the entire device against a thermal stress or the like.

摘要翻译： 本发明的优选实施例的电路装置包括：电路元件，其电极形成在其周边部分中; 与电极表面连接的连接部分; 以及与各连接部连续并且与电路元件的主面平行延伸的再分配线。 在本发明的优选实施例中，连接部分和再分布线由一片金属一体地形成。 因此，在连接部分和再分配线之间的部分中没有不同材料连接的地方，从而提高整个装置对热应力等的接合可靠性。

公开(公告)号：US07724536B2

公开(公告)日：2010-05-25

申请号：US11392578

申请日：2006-03-30

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Katsunori Kobayashi

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Katsunori Kobayashi

IPC分类号： H05K1/18

CPC分类号： H05K3/421 ,  H01L23/3677 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/114 ,  H05K3/28 ,  H05K3/4644 ,  H05K2201/094 ,  H05K2201/09509 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2203/049 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A circuit device capable of suppressing reduction of reliability resulting from heat generated in a circuit element is obtained. This circuit device comprises a first insulating layer having a first opening and a second opening, a first conductor filling up the first opening of the first insulating layer, a second conductor, formed along the inner side surface of the second opening of the first insulating layer, having a concave upper surface and a circuit element arranged above a region of the first insulating layer formed with the first opening.

摘要翻译： 可以获得能够抑制由电路元件产生的热量引起的可靠性降低的电路装置。 该电路装置包括具有第一开口和第二开口的第一绝缘层，填充第一绝缘层的第一开口的第一导体，沿着第一绝缘层的第二开口的内侧表面形成的第二导体 具有凹形的上表面和布置在形成有第一开口的第一绝缘层的区域之上的电路元件。

公开(公告)号：US20090115642A1

公开(公告)日：2009-05-07

申请号：US12263192

申请日：2008-10-31

申请人： Tetsuji Omura ,  Nobuyuki Higashiyama ,  Hideki Mizuhara

发明人： Tetsuji Omura ,  Nobuyuki Higashiyama ,  Hideki Mizuhara

IPC分类号： H03K17/94

CPC分类号： H01H13/84 ,  H01H9/52 ,  H01H2217/00 ,  H01H2221/002 ,  H01H2221/006 ,  H01H2221/05 ,  H01H2225/028 ,  H01H2231/022 ,  H01H2231/042 ,  H01H2231/046 ,  H01H2239/01 ,  H01H2239/058 ,  H01H2239/072

摘要： A PDA as an apparatus actuated by key operations comprises: a substrate; an exothermic semiconductor device provided on a first major surface of the substrate; a plurality of switches provided on a second major surface of the substrate; a key mat located on the side of the second major surface of the substrate; a plurality of pressure conveying portions protruding from one of the major surfaces of the key mat toward each of the plurality of switches, the one of the major surfaces facing the second major surface of the substrate; and a key that is provided on the other major surface of the key mat and that can be pressed down to the key mat. A contact face between the particular switch located within a certain range of the distance from the semiconductor device, and the pressure conveying portion corresponding to the particular switch, has a smaller area as compared to that of a contact face between the non-particular switch, which is a switch other than the particular switch, and the pressure conveying portion corresponding to the non-particular switch.

摘要翻译： 作为由键操作致动的装置的PDA包括：基板; 设置在所述基板的第一主表面上的放热半导体装置; 设置在所述基板的第二主表面上的多个开关; 位于所述基板的所述第二主表面侧的键垫; 多个压力输送部分，从所述键垫的一个主表面朝向所述多个开关中的每一个突出，所述一个主表面面向所述基板的第二主表面; 以及提供在钥匙垫的另一个主表面上并且可以被按压到钥匙垫的钥匙。 位于与半导体器件的距离的一定范围内的特定开关与对应于特定开关的压力传递部分之间的接触面与非特定开关之间的接触面相比具有较小的面积， 其是除特定开关以外的开关，以及对应于非特定开关的压力输送部。

公开(公告)号：US07507658B2

公开(公告)日：2009-03-24

申请号：US11086635

申请日：2005-03-22

申请人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

发明人： Ryosuke Usui ,  Yasunori Inoue ,  Hideki Mizuhara

IPC分类号： H01L21/4763

CPC分类号： H01L23/5389 ,  H01L21/76804 ,  H01L21/76814 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24145 ,  H01L2224/24195 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

摘要： A via hole is formed by a first step of forming an opening in a resin insulating film by laser radiation, a second step of forming an opening in said resin insulating film by dry etching and a third step of performing reverse sputtering in a plasma environment.

摘要翻译： 通过激光辐射在树脂绝缘膜中形成开口的第一步骤形成通孔，通过干蚀刻在所述树脂绝缘膜中形成开口的第二步骤，以及在等离子体环境中进行反溅射的第三步骤。

公开(公告)号：US20080157338A1

公开(公告)日：2008-07-03

申请号：US11957030

申请日：2007-12-14

申请人： Mayumi Nakasato ,  Kiyoshi Shibata ,  Yoshio Okayama ,  Ryosuke Usui ,  Hideki Mizuhara

发明人： Mayumi Nakasato ,  Kiyoshi Shibata ,  Yoshio Okayama ,  Ryosuke Usui ,  Hideki Mizuhara

IPC分类号： H01L21/50 ,  H01L23/52

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02319 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00

摘要： A manufacturing technology is provided capable of improving the reliability of a semiconductor module having a via contact connected to an electrode part of a semiconductor device. A conductive bump is formed on an insulating layer such that the end of the conductive bump is in contact with an electrode of a semiconductor substrate. By pressure-molding the assembly using a press machine, the semiconductor substrate, the conductive bump, and the insulating layer are integrated. With this, the conductive bump is allowed to embed itself in the insulating layer while maintaining contact with the electrode. The insulating layer is subject to laser irradiation from above so as to form an aperture exposing the conductive bump. Subsequently, the upper surface of the insulating layer and the interior surface of the aperture are plated with copper by electroless plating and electroplating so as to form a copper plating layer, and a via contact is formed in the aperture so as to coat the inner wall of the aperture.

摘要翻译： 提供了能够提高具有连接到半导体器件的电极部分的通孔接触的半导体模块的可靠性的制造技术。 导电凸块形成在绝缘层上，使得导电凸块的端部与半导体衬底的电极接触。 通过使用压制机对组件进行加压成型，将半导体衬底，导电凸块和绝缘层集成。 由此，允许导电凸块自身嵌入绝缘层中，同时保持与电极的接触。 绝缘层从上方经受激光照射，以形成露出导电凸块的孔。 随后，绝缘层的上表面和孔的内表面通过无电解电镀和电镀电镀铜，以形成镀铜层，并且在孔中形成通孔接触以涂覆内壁 的孔径。