公开(公告)号：US5361015A

公开(公告)日：1994-11-01

申请号：US011006

申请日：1993-01-29

申请人： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

发明人： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J7/06 ,  H01L21/02

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30446

摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.

摘要翻译： 多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及 导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。

公开(公告)号：US5334864A

公开(公告)日：1994-08-02

申请号：US818530

申请日：1992-01-09

申请人： Hiroyuki Tokunaga ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Takao Yonehara

IPC分类号： H01L21/36 ,  H01L21/84 ,  H01L31/032 ,  H01L31/18 ,  H01L29/161 ,  H01L27/12

CPC分类号： H01L21/02557 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/84 ,  H01L31/0322 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/541 ,  Y02E10/543

摘要： A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).

摘要翻译： 用于选择性形成II-VI族化合物膜的方法包括在包括用于提供元素周期表的II族原子的起始材料和用于提供第VI族原子的周期表的原料的气相中进行化合物成膜处理 在具有较小成核密度的非成核表面（SNDS）和具有比所述非成核表面（SNDS）的成核密度（NDS））更大的成核密度（NDL）的成核表面（SNDL）的基底上， 大面积足以形成许多核，并且仅在所述成核表面（SNDL）上选择性地形成II-VI族化合物膜。

公开(公告)号：US5324536A

公开(公告)日：1994-06-28

申请号：US116542

申请日：1993-09-07

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/20 ,  H01L21/768 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/76879 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/768

摘要： A method of forming a multilayered structure by flattening an uneven deposited surface thereof. It comprises the steps of: forming lower and higher portions on the deposited surface with different kinds of materials; and depositing a material selectively on the lower portions alone on the surface using the difference in nucleation density between the deposited materials due to the kinds of the materials of the deposited surface, thereby flattening the surface.

摘要翻译： 通过使其不均匀沉积表面变平而形成多层结构的方法。 它包括以下步骤：用不同种类的材料在沉积表面上形成较低部分和较高部分; 并且由于沉积表面的材料的种类，使用沉积材料之间的成核密度差，在表面上单独地在下部上选择性地沉积材料，从而使表面变平。

公开(公告)号：US5281283A

公开(公告)日：1994-01-25

申请号：US985751

申请日：1992-12-04

申请人： Hiroyuki Tokunaga ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Takao Yonehara

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20

CPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  Y10S148/026

摘要： A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

摘要翻译： III-V族化合物晶体制品包括具有较小成核密度（SNDS）的非成核表面和与所述非成核表面（SNDS）相邻布置的成核表面（SNDL）的基底具有足够小的面积 使得晶体仅从所述非成核表面（SNDS）的单核和较大的成核密度（NDL）生长，并且由非晶材料和III-V族化合物单晶 在所述基底上从所述单核生长并在所述非成核表面（SNDS）上超过所述成核表面（SNDL）扩散。

公开(公告)号：US5278093A

公开(公告)日：1994-01-11

申请号：US919372

申请日：1992-07-29

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/20

CPC分类号： H01L21/2022 ,  Y10S148/154

摘要： A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700.degree. C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200.degree. C. or higher in which a lamp light is radiated to the crystallized thin film.

摘要翻译： 一种半导体薄膜的形成方法，其特征在于，在700℃以下进行10小时以上的第1次热处理，在1200℃以上进行第2次热处理，使非晶硅薄膜结晶化， 光被照射到结晶​​的薄膜上。

公开(公告)号：US5254211A

公开(公告)日：1993-10-19

申请号：US759768

申请日：1991-09-13

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： C30B19/02 ,  C30B19/12 ,  C30B19/06

CPC分类号： C30B19/02 ,  C30B19/12

摘要： A method of forming a crystal comprises a crystal forming treatment effected by dipping a substrate having a nonnucleation surface having a small nucleation density and a nucleation surface having a larger nucleation density than said nonnucleation surface and an area sufficiently fine to such an extent as to allow only a single nucleus to be formed in a solution containing a monocrystal forming material to thereby allow a monocrystal to grow from only the single nucleus.

摘要翻译： 形成晶体的方法包括通过浸渍具有小成核密度的非成核表面的基底和具有比所述非成核表面更大成核密度的成核表面的基底和足够细的面积至允许 仅在含有单晶形成材料的溶液中形成的单个核，从而允许单晶仅从单个核生长。

公开(公告)号：US5250460A

公开(公告)日：1993-10-05

申请号：US958724

申请日：1992-10-09

申请人： Kenji Yamagata ,  Takao Yonehara

发明人： Kenji Yamagata ,  Takao Yonehara

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L21/76

CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76251 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/15

摘要： A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.

公开(公告)号：US5155058A

公开(公告)日：1992-10-13

申请号：US855498

申请日：1992-03-23

申请人： Shinji Fujiwara ,  Takao Yonehara

发明人： Shinji Fujiwara ,  Takao Yonehara

IPC分类号： H01L21/20 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L21/8221 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L27/0688

摘要： A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.

摘要翻译： 半导体存储器件具有构成信息存储电路的多个第一晶体管和构成用于控制信息输入和输出的栅极单元的多个第二晶体管。 多个第一晶体管和多个第二晶体管跨越绝缘层以相互重叠的结构形成。 在绝缘层上形成成核密度足够高于绝缘层的成核密度且尺寸足够小以生长半导体材料的单个核的异质材料。 位于绝缘层上的晶体管形成在形成于不同材料上的单个核周围生长的单晶或基本单晶半导体层中。

公开(公告)号：US5094697A

公开(公告)日：1992-03-10

申请号：US538007

申请日：1990-06-14

申请人： Akiharu Takabayashi ,  Takao Yonehara

发明人： Akiharu Takabayashi ,  Takao Yonehara

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/078 ,  H01L31/18

CPC分类号： H01L21/0262 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device comprises a substrate having a plurality of conductive surfaces surrounded by an insulating surface, a plurality of first photovoltaic elements having single-crystal layer regions covering said conductive surfaces, and a second photovoltaic element covering said plurality of first photovoltaic elements.The single-crystal layer regions are separated from each other.

摘要翻译： 光伏器件包括具有由绝缘表面包围的多个导电表面的衬底，具有覆盖所述导电表面的单晶层区域的多个第一光电元件和覆盖所述多个第一光电元件的第二光电元件。 单晶层区域彼此分离。

公开(公告)号：US5013670A

公开(公告)日：1991-05-07

申请号：US523828

申请日：1990-05-15

申请人： Shiro Arikawa ,  Takao Yonehara

发明人： Shiro Arikawa ,  Takao Yonehara

IPC分类号： H01L27/146 ,  H01L21/20 ,  H01L31/0216 ,  H01L31/10 ,  H01L31/11 ,  H01L31/113 ,  H01L31/18 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3745

CPC分类号： H01L31/02164 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L31/1105 ,  H01L31/1136 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/152

摘要： A photoelectric conversion device includes a light transmissive substrate having a deposition surface and a bottom surface. The bottom surface receives light and passes it through the substrate. A heterogeneous deposition surface is formed on the substrate deposition surface and has a nucleation density higher than the nucleation density of the substrate deposition surface. The heterogeneous deposition surface also has an area dimensioned to permit growth of a single nucleus of a single crystal material. A photoelectric conversion collector is formed of the single crystal material grown on the heterogeneous deposition surface. The collector receives light passed through the substrate bottom surface. Photoresponsive transistor elements are formed in and on the collector for outputting a signal corresponding to the light received by the collector through the bottom of the light transmissive substrate. Thus, electrical wiring and transistor elements are formed on the top of the collector, away from the collector surface which receives the light.

摘要翻译： 光电转换装置包括具有沉积表面和底表面的透光基底。 底面接收光并将其通过基板。 在基板沉积表面上形成非均相沉积表面，其成核密度高于基板沉积表面的成核密度。 异质沉积表面还具有尺寸允许单晶材料单核生长的面积。 光电转换收集器由在异质沉积表面上生长的单晶材料形成。 收集器接收通过基板底面的光。 响应晶体管元件形成在集电极上和集电极上，用于输出对应于集电极通过透光基板的底部接收的光的信号。 因此，电接线和晶体管元件形成在集电器的顶部，远离收纳光的集电器表面。