公开(公告)号：US20050275048A1

公开(公告)日：2005-12-15

申请号：US10867352

申请日：2004-06-14

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

IPC分类号： H01L21/00 ,  H01L23/02 ,  H01L23/48 ,  H01L27/14 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0203 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/48 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

摘要翻译： 本文公开了微电子成像器和用于封装微电子成像器的方法。 在一个实施例中，微电子成像单元可以包括微电子管芯，图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的接合焊盘。 导电晶片互连延伸穿过管芯并且与焊盘接触。 互连可以包括完全延伸穿过基底的通道和具有至少部分地设置在通道中的导电填充材料的接合垫。 导电支撑构件由接合垫承载和突出。 图像传感器上的盖连接到支撑构件。

公开(公告)号：US20050230825A1

公开(公告)日：2005-10-20

申请号：US11083057

申请日：2005-03-16

申请人： Salman Akram ,  Alan Wood ,  Warren Farnworth

发明人： Salman Akram ,  Alan Wood ,  Warren Farnworth

IPC分类号： G01R1/04 ,  H01L21/60 ,  H01L23/13 ,  H01L23/48 ,  H01L23/498 ,  H05K3/32

CPC分类号： H01L23/13 ,  G01R1/0466 ,  G01R1/0483 ,  H01L23/49827 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/8114 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/15174 ,  H05K3/325 ,  H05K3/326 ,  H01L2224/05599

摘要： The present invention is directed toward apparatus and methods of testing and assembling bumped die and bumped devices using an anisotropically conductive layer. In one embodiment, a semiconductor device comprises a bumped device having a plurality of conductive bumps formed thereon, a substrate having a plurality of contact pads distributed thereon and approximately aligned with the plurality of conductive bumps, and an anisotropically conductive layer disposed between and mechanically coupled to the bumped device and to the substrate. The anisotropically conductive layer electrically couples each of the conductive bumps with a corresponding one of the contact pads. In another embodiment, an apparatus for testing a bumped device having a plurality of conductive bumps includes a substrate having a plurality of contact pads distributed thereon and substantially alignable with the plurality of conductive bumps, and an anisotropically conductive layer disposed on the first surface and engageable with the plurality of conductive bumps to electrically couple each of the conductive bumps with a corresponding one of the contact pads. Alternately, the test apparatus may also include an alignment device or a bumped device handler. In another embodiment, a method of testing a bumped device includes engaging a plurality of contact pads with an anisotropically conductive layer, engaging the plurality of conductive bumps with the anisotropically conductive layer substantially opposite from and in approximate alignment with the plurality of contact pads, forming a plurality of conductive paths through the anisotropically conductive layer so that each of the conductive bumps is electrically coupled to one of the contact pads, and applying test signals through at least some of the contact pads and the conductive paths to at least some of the conductive bumps.

公开(公告)号：US06939145B2

公开(公告)日：2005-09-06

申请号：US10458016

申请日：2003-06-10

申请人： David R. Hembree ,  Salman Akram ,  Derek Gochnour

发明人： David R. Hembree ,  Salman Akram ,  Derek Gochnour

IPC分类号： G01R1/04 ,  H01R12/00

CPC分类号： G01R1/0466 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49153 ,  Y10T29/53209 ,  Y10T29/5323

摘要： A spring element used in a temporary package for testing semiconductors is provided. The spring element is compressed so as to press the semiconductor, either in the form of a bare semiconductor die or as part of a package, against an interconnect structure. The spring element is configured so that it provides sufficient pressure to keep the contacts on the semiconductor in electrical contact with the interconnect structure. Material is added and/or removed from the spring element so that it has the desired modulus of elasticity. The shape of the spring element may also be varied to change the modulus of elasticity, the spring constant, and the force transfer capabilities of the spring element.

公开(公告)号：US06932077B2

公开(公告)日：2005-08-23

申请号：US10701957

申请日：2003-11-05

申请人： Salman Akram ,  Derek J. Gochnour ,  Michael E. Hess ,  David R. Hembree

发明人： Salman Akram ,  Derek J. Gochnour ,  Michael E. Hess ,  David R. Hembree

IPC分类号： B23P17/00 ,  B26D3/00 ,  B28D1/32 ,  B28D5/02 ,  H01L21/00 ,  H01L21/301 ,  H01L23/58 ,  H01L29/00 ,  H05K3/02 ,  H05K3/20 ,  H05K3/30 ,  B24D4/00

CPC分类号： H01L21/67092 ,  B28D5/024 ,  B28D5/029 ,  Y10T83/0222 ,  Y10T83/0363 ,  Y10T83/04 ,  Y10T83/0524 ,  Y10T83/7726 ,  Y10T83/7809 ,  Y10T83/7868

摘要： A semiconductor wafer saw for dicing semiconductor wafers comprises variable lateral indexing capabilities and multiple blades. The wafer saw, because of its variable indexing capabilities, can dice wafers having a plurality of differently sized semiconductor devices thereon into their respective discrete components. In addition, the wafer saw with its multiple blades, some of which may be independently laterally or vertically movable relative to other blades, can more efficiently dice silicon wafers into individual semiconductor devices.

摘要翻译： 用于切割半导体晶片的半导体晶片锯包括可变横向分度能力和多个叶片。 晶片锯由于其可变的分度能力，可将其上具有多个不同尺寸的半导体器件的晶片切割成其各自的分立元件。 此外，具有多个叶片的晶片锯，其中一些可相对于其它叶片独立地横向或垂直移动，可以更有效地将硅晶片切割成单独的半导体器件。

公开(公告)号：US20050181595A1

公开(公告)日：2005-08-18

申请号：US11100282

申请日：2005-04-06

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/7685 ,  H01L21/76852

摘要： The present invention provides a metallization structure for semiconductor device interconnects such as a conductive line, including a substrate with a substantially planar upper surface, foundation metal layer disposed on a portion of the substrate upper surface, primary conducting metal layer overlying the foundation metal layer, and metal spacer on the sidewalls of the primary conducting metal layer and the foundation metal layer. The present invention also provides a metallization structure including a substrate with a foundation metal layer disposed thereon, a dielectric layer with an aperture therethrough being disposed on the substrate, where the bottom of the aperture exposes the foundation metal layer of the substrate, and a metal spacer on the sidewall of the aperture and a line or plug of a primary conducting metal fill the remaining portion of the aperture. The present invention also includes methods for making the metallization structures.

摘要翻译： 本发明提供了一种用于半导体器件互连的金属化结构，诸如导线，包括具有基本平坦的上表面的基板，设置在基板上表面的一部分上的基底金属层，覆盖在基础金属层上的初级导电金属层， 和金属间隔物在主导电金属层和基底金属层的侧壁上。 本发明还提供了一种金属化结构，其包括其上设置有基底金属层的基底，具有穿过其中的孔的介电层设置在基底上，孔的底部露出基底的基底金属层，金属 孔的侧壁上的间隔物和初级导电金属的线或插塞填充孔的剩余部分。 本发明还包括用于制造金属化结构的方法。

公开(公告)号：US20050173790A1

公开(公告)日：2005-08-11

申请号：US11070600

申请日：2005-03-02

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： G01R1/04 ,  H01L21/68 ,  H01L23/52

CPC分类号： H01L21/6835 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/00 ,  B33Y70/00 ,  B33Y80/00 ,  G01R1/0483 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2224/05599

摘要： Protective structures for bond wires or other intermediate conductive elements of a semiconductor device assembly cover the intermediate conductive elements without covering a substantial portion of a semiconductor device from which the intermediate conductive elements extend. In addition to coating at least portions of one or more intermediate conductive elements, the protective structure may include a fence which is configured to receive a semiconductor device. Such a fence may be formed integrally with the remainder of the protective structure or a separately formed member. The protective structures may be formed from a photopolymer material which has been at least partially cured, for example, by stereolithography processes. Accordingly, the protective structures may include a single layer or a plurality of superimposed, contiguous, mutually adhered layers.

摘要翻译： 用于半导体器件组件的接合线或其它中间导电元件的保护结构覆盖中间导电元件而不覆盖中间导电元件从其延伸的半导体器件的主要部分。 除了涂覆一个或多个中间导电元件的至少一部分之外，保护结构可以包括被配置为接收半导体器件的栅栏。 这样的围栏可以与保护结构的其余部分或单独形成的部件一体形成。 保护结构可以由至少部分固化的光聚合物材料形成，例如通过立体光刻工艺。 因此，保护​​结构可以包括单层或多个叠加的，邻接的相互粘附的层。

公开(公告)号：US20050161490A1

公开(公告)日：2005-07-28

申请号：US11041142

申请日：2005-01-21

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  B23K35/14

CPC分类号： H01L21/6835 ,  H01L24/11 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3478 ,  H05K3/3484 ,  H05K2203/0338 ,  H05K2203/043 ,  H01L2924/00 ,  H01L2224/05599

摘要： Metal traces and solder bump pads are formed on a semiconductor substrate by way of a semiconductor template that has been micromachined to receive solder paste material. The solder paste material is then formed into precisely controlled ball shapes and metal trace geometries.

摘要翻译： 通过半导体模板在半导体衬底上形成金属迹线和焊料凸点焊盘，该半导体模板已被微加工以接收锡膏材料。 然后将焊膏材料形成精确控制的球形和金属痕迹几何形状。

公开(公告)号：US06919220B2

公开(公告)日：2005-07-19

申请号：US10033233

申请日：2001-12-28

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/42 ,  H01L23/433 ,  H01L25/065 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/10 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/4334 ,  H01L24/31 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83951 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2224/45099

摘要： The present invention relates to enhanced protection of the active surface and the bond wires or ball array of a microelectronic device, and to thermal management of the microelectronic device as it is packaged with a printed circuit board (PCB) or other substrate. The enhanced protection and thermal management are accomplished with a high-temperature thermal grease that is glob topped or encapsulated over the bond wires or ball array, and the active surface of the microelectronic device. The high-temperature thermal grease exchanges heat, particularly by conduction, away from the active surface of the microelectronic device as well as away from the bond wires.

公开(公告)号：US06911723B2

公开(公告)日：2005-06-28

申请号：US09989326

申请日：2001-11-20

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L25/065 ,  H01L23/02

CPC分类号： H01L25/18 ,  H01L23/3185 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Multiple integrated circuit devices in a stacked configuration that use a spacing element for allowing increased device density and increased thermal conduction or heat removal for semiconductor devices and the methods for the stacking thereof are disclosed.

摘要翻译： 公开了使用间隔元件以允许增加器件密度和增加半导体器件的热传导或散热的堆叠结构的多个集成电路器件及其堆叠方法。

公开(公告)号：US06899797B2

公开(公告)日：2005-05-31

申请号：US10365381

申请日：2003-02-11

申请人： Salman Akram ,  David R. Hembree

发明人： Salman Akram ,  David R. Hembree

IPC分类号： C25D7/12 ,  C25D17/00 ,  C25F7/00

CPC分类号： C25F7/00 ,  C25D17/001

摘要： An electrochemical reaction assembly of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly achieves a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

摘要翻译： 引起电化学反应的电化学反应组件，例如用于在半导体衬底上沉积材料。 通过将半导体衬底保持在浸入合适的反应溶液中的移动阴极上，在电化学反应期间，丝网阳极围绕移动的阴极旋转，该组件实现了沉积材料的高度均匀的厚度和组成，或半导体衬底上的均匀蚀刻或抛光。