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    Dislocation reduction in non-polar III-nitride thin films
    71.
    发明授权
    Dislocation reduction in non-polar III-nitride thin films 有权
    非极性III族氮化物薄膜的位错减少

    公开(公告)号：US08809867B2

    公开(公告)日：2014-08-19

    申请号：US11852908

    申请日：2007-09-10

    申请人： Michael D. Craven ,  Steven P. Denbaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Michael D. Craven ,  Steven P. Denbaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/15 ,  H01L21/20 ,  H01L21/02

    CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    摘要翻译： 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

    LED with current confinement structure and surface roughening
    75.
    发明授权
    LED with current confinement structure and surface roughening 有权

    公开(公告)号：US08410490B2

    公开(公告)日：2013-04-02

    申请号：US11983515

    申请日：2007-11-09

    申请人： Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

    发明人： Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

    IPC分类号： H01L27/15

    CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

    摘要： An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.

    III-NITRIDE FLIP-CHIP SOLAR CELLS
    77.
    发明申请
    III-NITRIDE FLIP-CHIP SOLAR CELLS 审中-公开
    III-NITRIDE FLIP-CHIP太阳能电池

    公开(公告)号：US20120180868A1

    公开(公告)日：2012-07-19

    申请号：US13279131

    申请日：2011-10-21

    申请人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

    发明人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

    摘要： A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.

    摘要翻译： 用于制造III族氮化物光伏器件的III族氮化物光伏器件结构和方法，其增加了III族氮化物光伏器件的光收集效率。 III族氮化物光伏器件包括一个或多个III族氮化物器件层，并且III族氮化物光伏器件通过收集入射在III族氮化物器件层的背面上的光而起作用。 III族氮化物器件层在衬底上生长，其中当除去衬底时，III族氮化物器件层被暴露，然后有意地暴露暴露的III族氮化物器件层以增强它们的光收集效率。 通过设备背面的入射光的收集简化了器件中多个结的制造。 III族氮化物光伏器件可以包括格栅状触点，透明或半透明触点或反射触点。