公开(公告)号：US5585149A

公开(公告)日：1996-12-17

申请号：US448123

申请日：1995-05-23

申请人： Yutaka Hirai ,  Toshiyuki Komatsu ,  Katsumi Nakagawa ,  Teruo Misumi ,  Tadaji Fukuda

发明人： Yutaka Hirai ,  Toshiyuki Komatsu ,  Katsumi Nakagawa ,  Teruo Misumi ,  Tadaji Fukuda

IPC分类号： C23C14/00 ,  C23C14/16 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  G03G5/082 ,  H01L31/09 ,  H01L31/20 ,  B05D3/06 ,  G03G5/00

CPC分类号： C23C14/16 ,  C23C14/0036 ,  C23C14/0057 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/507 ,  C23C16/509 ,  G03G5/08221 ,  G03G5/08228 ,  G03G5/08242 ,  G03G5/08278 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

摘要翻译： 通过使用高于甲硅烷的硅烷气体的等离子体CVD形成含有H，优选10-40原子％H的非晶硅层，其用作电子照相感光构件的光电导层。

公开(公告)号：US5554851A

公开(公告)日：1996-09-10

申请号：US407245

申请日：1995-03-20

申请人： Yutaka Hirai ,  Osamu Takamatsu ,  Katsunori Hatanaka ,  Masaru Nakayama ,  Hiroyasu Nose ,  Takayuki Yagi ,  Yasuhiro Shimida

发明人： Yutaka Hirai ,  Osamu Takamatsu ,  Katsunori Hatanaka ,  Masaru Nakayama ,  Hiroyasu Nose ,  Takayuki Yagi ,  Yasuhiro Shimida

IPC分类号： B81B3/00 ,  G01B5/00 ,  G01B7/34 ,  G01Q10/00 ,  G01Q10/02 ,  G01Q10/04 ,  G01Q60/10 ,  G01Q80/00 ,  G01Q90/00 ,  G11B9/00 ,  G11B9/14 ,  H01L27/10 ,  H01J37/28

CPC分类号： G01Q10/04 ,  B82Y35/00 ,  G01B5/0004 ,  G11B9/14 ,  B82Y10/00 ,  Y10S977/872

摘要： A parallel plane holding mechanism is constructed as follows. Beams are provided on the peripheral portion of a flat plate-shaped weight member. A base plate is provided so as to face the weight member. First and second electrodes are provided on both surfaces of the weight member and the base plate to face each other. A voltage is applied between the first electrode and the second electrode so that the distance between the weight member and the base plate is controlled to move the weight member to thereby hold a reference surface of the weight member to be parallel to a predetermined reference surface.

摘要翻译： 平行平面保持机构如下构成。 梁设置在平板状的重量部件的周边部分上。 基板设置为面对配重构件。 第一和第二电极设置在配重构件和基板的两个表面上以彼此面对。 在第一电极和第二电极之间施加电压，使得配重构件和基板之间的距离被控制以移动配重构件，从而将配重构件的基准表面保持为平行于预定的参考表面。

公开(公告)号：US5506829A

公开(公告)日：1996-04-09

申请号：US253606

申请日：1994-06-03

申请人： Takayuki Yagi ,  Yutaka Hirai ,  Osamu Takamatsu ,  Masaru Nakayama ,  Yuji Kasanuki ,  Yasuhiro Shimada ,  Keisuke Yamamoto ,  Yoshio Suzuki

发明人： Takayuki Yagi ,  Yutaka Hirai ,  Osamu Takamatsu ,  Masaru Nakayama ,  Yuji Kasanuki ,  Yasuhiro Shimada ,  Keisuke Yamamoto ,  Yoshio Suzuki

IPC分类号： B81B3/00 ,  G01N27/00 ,  G01Q10/00 ,  G01Q10/04 ,  G01Q60/00 ,  G01Q60/16 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  H01J37/28 ,  H01L21/66 ,  H01L41/09 ,  H01L41/22

CPC分类号： G01Q10/06 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/14 ,  G11B9/1436 ,  H01L41/094 ,  B82Y10/00 ,  Y10S977/872 ,  Y10S977/873

摘要： A cantilever probe comprising a cantilever displacement element containing a piezoelectric material provided between driving electrodes for causing displacement of the piezoelectric material, a probe for information input and output provided on the free end of the element, a drawing electrode for the probe and, a non-electroconductive thin film provided on at least a portion of an end of the element.

摘要翻译： 一种悬臂探头，包括悬臂位移元件，该悬臂位移元件包含设置在驱动电极之间的用于引起压电材料位移的压电材料，设置在元件自由端上的用于信息输入和输出的探针，用于探针的拉伸电极， - 设置在元件的端部的至少一部分上的导电薄膜。

公开(公告)号：US5485020A

公开(公告)日：1996-01-16

申请号：US286989

申请日：1994-08-08

申请人： Yutaka Hirai ,  Yoshiyuki Osada ,  Takashi Nakagiri ,  Katsunori Hatanaka

发明人： Yutaka Hirai ,  Yoshiyuki Osada ,  Takashi Nakagiri ,  Katsunori Hatanaka

IPC分类号： H01L23/522 ,  H01L29/786 ,  H01L29/04 ,  H01L31/20

CPC分类号： H01L23/522 ,  H01L29/78618 ,  H01L2924/0002

摘要： In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.

摘要翻译： 在包括要连接到薄膜晶体管的源极区域或漏极区域的布线的半导体器件中，布线的至少一部分包括具有与所述源极区域或漏极区域相同的横截面结构的布线部分 并且所述布线部分与所述源极区域或所述漏极区域连续形成，所述布线部分与所述布线部分的相应端部同时形成，所述源极区域和所述漏极区域形成为使得其边缘从 构成薄膜晶体管的半导体层。

公开(公告)号：US5317152A

公开(公告)日：1994-05-31

申请号：US871727

申请日：1992-04-21

申请人： Osamu Takamatsu ,  Yutaka Hirai ,  Masaru Nakayama ,  Takayuki Yagi ,  Yuji Kasanuki ,  Yasuhiro Shimada

发明人： Osamu Takamatsu ,  Yutaka Hirai ,  Masaru Nakayama ,  Takayuki Yagi ,  Yuji Kasanuki ,  Yasuhiro Shimada

IPC分类号： G01Q10/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  H01J37/26 ,  H01L41/22

CPC分类号： G01Q60/16 ,  B82Y35/00 ,  G01Q20/04 ,  G11B9/1436 ,  B82Y10/00 ,  G01Q80/00 ,  Y10S977/837 ,  Y10S977/861 ,  Y10S977/872 ,  Y10S977/873 ,  Y10S977/875

摘要： A cantilever type probe comprises a cantilever-shaped displacement element and a tip which displacement element has a first electrode layer, a first piezoelectric material film and a second piezoelectric material film which films are laminated on opposite sides of the first electrode layer, and a second electrode layer and a third electrode layer which layer are laminated on outer surfaces of the piezoelectric material films, and which tip is connected with a leader electrode located at a free end of the surface of the displacement element; wherein in the width direction of the cantilever both ends of the first electrode layer protrude outward more than each end of the second and third electrode layers. A scanning tunneling microscope comprises the cantilever type probe, a driving means for displacing the probe, a stage for specimen so as to approach and locate the specimen to the tip, and a potential applying means for applying a bias voltage between the tip and the specimen. An information processing apparatus further comprises a second potential applying means for applying a pulse and bias voltage between the tip and the recording medium; wherein an information is written on the recording medium and an information in the recording medium is read out by electric current flowing between the tip and the recording medium.

摘要翻译： 悬臂式探头包括悬臂形位移元件和位移元件具有第一电极层的尖端，第一压电材料膜和第二压电材料膜，所述第一压电材料膜和第二压电材料膜层压在第一电极层的相对侧上，并且第二 电极层和层压在压电材料膜的外表面上的第三电极层，并且该尖端与位于位移元件的表面的自由端的引导电极连接; 其特征在于，所述第一电极层的所述悬臂的两端的宽度方向上比所述第二电极层和所述第三电极层的端部向外突出。 扫描隧道显微镜包括悬臂型探针，用于移动探针的驱动装置，用于样本的台阶，以将样本接近并定位到尖端;以及电位施加装置，用于在尖端和样本之间施加偏置电压 。 信息处理装置还包括用于在尖端和记录介质之间施加脉冲和偏置电压的第二电位施加装置; 其中信息被写在记录介质上，并且通过在尖端和记录介质之间流动的电流来读出记录介质中的信息。

公开(公告)号：US4987460A

公开(公告)日：1991-01-22

申请号：US406815

申请日：1989-09-13

申请人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/18 ,  H01L33/42

CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/06 ,  H01L33/18 ,  H05B33/145

摘要： A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.

摘要翻译： 发光器件具有发光层，其具有层叠并具有同质结的硅原子，碳原子和氟原子的至少两层的非单晶材料，以及至少一对电连接到所述发光层的电极， 光学带隙为2.0eV以上的非单晶硅层和中间间隙的局部水平密度为5×10 16 cm -3ev-1以下。

公开(公告)号：US4982251A

公开(公告)日：1991-01-01

申请号：US511952

申请日：1990-04-17

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/205 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78675

摘要： A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.

摘要翻译： 半导体元件的主要部分由含有0.01〜1原子％的氟原子的多晶硅半导体层构成。

公开(公告)号：US4933221A

公开(公告)日：1990-06-12

申请号：US233902

申请日：1988-08-17

申请人： Yukuo Nishimura ,  Haruki Kawada ,  Masahiro Haruta ,  Yutaka Hirai ,  Noritaka Mochizuki ,  Takashi Nakagiri

发明人： Yukuo Nishimura ,  Haruki Kawada ,  Masahiro Haruta ,  Yutaka Hirai ,  Noritaka Mochizuki ,  Takashi Nakagiri

IPC分类号： G11B7/244 ,  G11B7/248

CPC分类号： G11B7/248 ,  G11B7/244 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/24975 ,  Y10T428/31504

摘要： An optical recording device and an information memorizing device utilizing the same are provided. The optical recording device comprises an A-layer comprising a chromogenic compound which is usually colorless or pale colored, a B-layer comprising an auxochromic compound capable of making said chromogenic compound form color through contact with said chromogenic compound, and a light-absorbing layer, at least one of the three layers being constituted of a monomolecular film or a built-up film thereof.

摘要翻译： 提供了一种光记录装置和使用该记录装置的信息存储装置。 光记录装置包括A层，其包含通常为无色或浅色的显色化合物，B层包含能够通过与所述显色化合物接触而使所述显色化合物形成颜色的辅助色素化合物，以及光吸收层 三层中的至少一层由单分子膜或其积层膜构成。

公开(公告)号：US4921722A

公开(公告)日：1990-05-01

申请号：US786700

申请日：1985-10-11

申请人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

发明人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/452 ,  H01L21/205 ,  H01L21/263

CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

摘要翻译： 通过形成通式SinHm的氢化硅化合物的气氛形成沉积膜的方法，其中n为1以上的整数，m为2以上的整数，在容纳基板的室内形成 通过激发所述化合物进行分解或聚合，在所述基板上含有硅的沉积膜包括将气态自由基聚合引发剂引入所述​​室并利用光能，由此激发所述化合物以进行其分解或聚合。

公开(公告)号：US4905072A

公开(公告)日：1990-02-27

申请号：US188677

申请日：1988-04-29

申请人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： H01L21/306 ,  H01L29/04

CPC分类号： H01L29/04 ,  H01L21/30604 ,  H01L2924/0002

摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).

摘要翻译： 半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。 它也可能具有20安培/秒的蚀刻速率。 当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。