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71.发明公开公开(公告)号：US20230377848A1
公开(公告)日：2023-11-23
申请号：US18320655
申请日：2023-05-19
Applicant: 6K Inc.
Inventor： Richard K. Holman , Saurabh Ullal
IPC: H01J37/32
CPC classification number: H01J37/3244 , H01J37/32201 , H01J2237/0268 , H01J37/32495
Abstract: The embodiments disclosed herein are directed to systems, methods, and devices for processing a material using a microwave plasma apparatus with an interior liner. In some embodiments, the liner comprises a reduction resistant material layer in direct contact with a hydrogen-containing plasma of a plasma processing apparatus. In some embodiments, the liner may comprise a sleeve disposed between a plasma and one or more concentric tubes of a plasma processing apparatus. In some embodiments, the liner may comprise a coating of material applied to the one or more concentric tubes. In some embodiments, the liner may comprise a flexible ceramic material, such as a ceramic ribbon that is coiled or wrapped in a helix shape spiraling around the interior of the one or more concentric tubes.
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公开(公告)号：US20230207272A1
公开(公告)日：2023-06-29
申请号：US18056046
申请日：2022-11-16
Inventor： Sang Jeong LEE , Yoon Seok CHOI , Sun Wook JUNG , Ho-Jun LEE , Sang Woo KIM
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32229
Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.
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公开(公告)号：US20230160067A1
公开(公告)日：2023-05-25
申请号：US18099616
申请日：2023-01-20
Applicant: Starfire Industires, LLC
Inventor： Brian Edward Jurczyk , Robert Andrew Stubbers
IPC: C23C16/511 , C23C16/455 , C23C16/513 , C23C16/02 , H01J37/32 , C23C16/515 , C23C14/02
CPC classification number: C23C16/511 , C23C16/45576 , C23C16/513 , C23C16/4551 , C23C16/45595 , C23C16/0227 , H01J37/32192 , C23C16/515 , C23C14/021 , H01J37/32201 , H01J37/32247 , H01J37/32449 , C23C14/34
Abstract: A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.
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公开(公告)号：US11646177B2
公开(公告)日：2023-05-09
申请号：US16947134
申请日：2020-07-20
Applicant: CELLENCOR, INC.
Inventor： Kenneth Kaplan
CPC classification number: H01J37/32201 , H01J37/244 , H01J37/32311 , H03F3/19 , H03F3/21 , H05B6/686 , H05B6/705
Abstract: A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.
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75.发明申请公开(公告)号：US20190198296A1
公开(公告)日：2019-06-27
申请号：US16104496
申请日：2018-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： SIQING LU , YEONGKWANG LEE , KEESOO PARK , SEUNGJAE LEE , JINHYUK CHOI
CPC classification number: H01J37/3222 , H01J37/32201 , H01J37/32229 , H01J37/32238 , H01J37/32449 , H01J37/32513 , H01J37/32834 , H01J2237/3341 , H01L21/67011
Abstract: Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.
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Patent Agency Ranking
公开(公告)号：US20180240661A1
公开(公告)日：2018-08-23
申请号：US15897663
申请日：2018-02-15
Applicant: Radom Corporation
Inventor： Jovan Jevtic , Ashok Menon , Velibor Pikelja
CPC classification number: G01N21/73 , G01J3/0208 , G01J3/443 , G01N2201/0221 , H01J37/244 , H01J37/32201 , H01J37/32247 , H01J37/32449 , H01J49/0404 , H01J49/105
Abstract: A plasma unit for a mass spectroscopy machine generates plasma using a microwave coupled dielectric ring held within a microwave cavity employing part of the mass spectrometer structure to define the microwave cavity, thereby permitting improved proximity of the plasma and plasma ionized sample material to the mass spectrometer aperture.
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公开(公告)号：US20180238807A1
公开(公告)日：2018-08-23
申请号：US15897684
申请日：2018-02-15
Applicant: Radom Corporation
Inventor： Ashok Menon , Velibor Pikelja , Jovan Jevtic
IPC: G01N21/73 , H01J37/32 , H01J37/244 , G01J3/443 , G01J3/02
CPC classification number: G01N21/73 , G01J3/0208 , G01J3/443 , G01N2201/0221 , H01J37/244 , H01J37/32201 , H01J37/32247 , H01J37/32449 , H01J49/0404 , H01J49/105
Abstract: A portable, modular plasma source allows the production of an emission spectrometer by combination with a common portable fiber optic spectrograph by channeling emitted light through a fiber optic coupling communicating light from the plasma source to the portable fiber optic spectrograph.
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公开(公告)号：US20180114677A1
公开(公告)日：2018-04-26
申请号：US15793856
申请日：2017-10-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tomohito KOMATSU , Shigenori OZAKI , Yutaka FUJINO , Jun NAKAGOMI
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/32192 , H01J37/32302 , H01J37/3244
Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.
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公开(公告)号：US20180090301A1
公开(公告)日：2018-03-29
申请号：US15573156
申请日：2016-05-10
Applicant: Tokyo Electron Limited
Inventor： Shinji Kubota
IPC: H01J37/32
CPC classification number: H01J37/32302 , H01J37/32201 , H01J37/32293 , H01J37/3299
Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.
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公开(公告)号：US09922820B2
公开(公告)日：2018-03-20
申请号：US15420579
申请日：2017-01-31
Applicant: TOKYO ELECTRON LIMITED
Inventor： Noriaki Fukiage , Takayuki Karakawa , Toyohiro Kamada , Akihiro Kuribayashi , Takeshi Oyama , Jun Ogawa
IPC: H01L21/02 , C23C8/34 , H01J37/32 , H01L21/687
CPC classification number: H01L21/02277 , C23C8/34 , C23C16/345 , C23C16/4554 , C23C16/45551 , C23C28/04 , C23C28/046 , H01J37/32201 , H01J37/3244 , H01J37/32458 , H01J37/32715 , H01J2237/332 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/68764
Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.
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