Abstract:
Laser diode apparatus, comprising a carrier (1) having a carrier top (11), a laser diode chip (4) arranged on the carrier top (11) emitting, during operation, electromagnetic radiation through a radiating face (5), which radiating face (5) runs perpendicularly to the carrier top (11), and at least one optical element (6) to deflect at least some of the electromagnetic radiation radiated by the laser diode chip (4) perpendicularly to the carrier top (11). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate (8) between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.
Abstract:
Provided herein is a laser beam combination system. The laser beam combination system includes a laser emitter array including a plurality of laser emitters arranged therein, a first combination lens, through which a plurality of laser beams emitted from the laser emitters are concentrated in a first axis direction, so that the plurality of laser beams are converted to each have an oval cross-section having a long axis that is parallel to a second axis, and a second combination lens disposed at a focal point of the first combination lens to combine the plurality of laser beams converted by the first combination lens at a predetermined target.
Abstract:
An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.
Abstract:
A light source apparatus is provided which uses a plurality of semiconductor laser devices and which offers adequate heat dissipation. The light source apparatus using a plurality of semiconductor laser devices includes a holding member on which the plurality of semiconductor laser devices is arranged, wherein at least one semiconductor laser device among the plurality of semiconductor laser devices is arranged on the holding member such that a relative position of the semiconductor laser device in an optical axis direction with respect to an adjacent semiconductor laser device in a front view of the holding member is greater than a relative position of the semiconductor laser device in a direction perpendicular to the optical axis direction with respect to the adjacent semiconductor laser device.
Abstract:
A beam combining device causing beams from a plurality of light sources and one or a plurality of spare light sources to enter a beam combining optical system, and to be combined and output after passing through a beam combining element. The beam combining device is configured to: detect a failure in the plurality of light sources; and move at least a part of the respective light sources, the spare light source, and the beam combining optical system, to cause a beam to enter the beam combining optical system from the spare light source instead of a beam from the failed light source, and to cause the beam to be combined to beams from the plurality of light sources on an optical path after the beam combining element.
Abstract:
A light-emitting device includes a substrate; a lens array having a plurality of lens sections in a matrix pattern; and a plurality of semiconductor laser elements disposed on the substrate. Each of the semiconductor laser elements emits a respective laser beam, each laser beam having a beam shape with a greater width in a column direction than in a row direction on a light incident surface of each respective lens section. The lens sections have an inter-vertex distance in the row direction that is smaller than both (i) a maximum outer diameter of each of the lens sections, and (ii) an inter-vertex distance in the column direction. A curvature of the lens sections in the row direction is the same as a curvature of the lens sections in the column direction.
Abstract:
A light emitting elements drive control device includes: a detection unit that detects drive voltages and drive currents of a plurality of respective semiconductor light emitting elements arranged in a width direction of a recording medium; a calculation unit that calculates generated heat amounts of the respective semiconductor light emitting elements from heating-raised temperatures of the respective semiconductor light emitting elements determined based on the drive voltages and the drive currents detected by the detection unit, and calculates actual emission light quantities of the semiconductor light emitting elements from differences between the generated heat amounts of the semiconductor light emitting elements and input heat amounts corresponding to powers supplied to the semiconductor light emitting elements, respectively; and a correction unit that corrects differences between the actual emission light quantities of the semiconductor light emitting elements calculated by the calculation unit and required emission light quantities, respectively.
Abstract:
A laser including a solid state laser gain medium having a D-shaped cross section and an unstable resonator laser cavity including the solid state laser gain medium configured with a geometric magnification in a range of 1 to 5 under the intended operating conditions, including the effects of thermal lensing in the gain medium. An optical switching device in the unstable resonator laser cavity generates a pulse duration in the range of 0.05 to 100 nanoseconds. A diode-pump source is configured to inject pump light through the curved or barrel surface of the D-shaped gain medium.
Abstract:
This light receptacle comprises: first optical surfaces on which light beams emitted from light emitting elements are respectively caused to be incident; second optical surfaces which emit the light beams incident on first optical surfaces respectively toward the end faces of light transmission bodies; a third optical surface which reflects the light beams incident on the first optical surfaces toward the second optical surfaces; and recesses which are formed in the surface on which second optical surfaces are arranged. The distance between the centers of two adjacent first optical surfaces before mold release and the distance between the centers of two adjacent second optical surfaces before mold release during injection molding are shorter than the distance between the optical axes of light beams emitted from two adjacent light emitting elements that are arranged so as to face each other.
Abstract:
A large-aperture laser amplifier side-pumped by a multi-dimensional laser diode stack, which comprises: multiple pumping light source assemblies; a laser medium, of which the shape is a prismoid, wherein both the upside surface and the underside surface of the prismoid are polygonal, and the number of the edges of the polygon is the same as the number of the pumping light source assemblies; and a cooling device. Each side of the laser medium is provided with a pumping light source assembly; the pumping light emitted from the semiconductor laser diode stack is shaped by the beam shaping element, coupled by the coupling duct, and then enters from the side of the laser medium for side-pumping, and thereby amplifying the laser beam incident from the upside surface of the prismoid of the laser medium.