SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240072142A1

    公开(公告)日:2024-02-29

    申请号:US18218751

    申请日:2023-07-06

    CPC classification number: H01L29/4236 H01L21/32137

    Abstract: Provided is a method of manufacturing a semiconductor device, the method including steps of providing a semiconductor substrate having one or more trenches, forming a gate insulating layer on the semiconductor substrate inside the trenches, and forming a buried gate electrode layer on the gate insulating layer to at least partially fill the trenches, wherein the step of forming the buried gate electrode layer includes a step of repeating a unit cycle a plurality of times, the unit cycle including an atomic layer deposition (ALD) process for forming a conductive layer on the gate insulating layer to serve as the buried gate electrode layer, and an atomic layer etching (ALE) process for preferentially etching portions of the conductive layer formed near the trenches and portions of the conductive layer formed on upper ends of the trenches over other portions of the conductive layer inside the trenches.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240064967A1

    公开(公告)日:2024-02-22

    申请号:US18206490

    申请日:2023-06-06

    CPC classification number: H10B12/482 H10B12/488 H10B12/315

    Abstract: A semiconductor device includes bit lines each extending in a first direction on a substrate and spaced apart from each other in a second direction, semiconductor patterns disposed on each of the bit lines and including a first semiconductor pattern disposed on a first bit line, and a second semiconductor pattern arranged to be offset in the second direction from the first semiconductor pattern on the first bit line, word lines each extending in the second direction and surrounding a sidewall of each of the semiconductor patterns, the word lines including a first word line extending in the second direction and surrounding the first semiconductor pattern, and a second word line spaced apart in the first direction from the first word line and extending in the second direction while surrounding the second semiconductor pattern, and storage nodes respectively disposed on the semiconductor patterns.

    TRANSFER SYSTEM AND CONTROL METHOD THEREOF
    87.
    发明公开

    公开(公告)号:US20240059497A1

    公开(公告)日:2024-02-22

    申请号:US18340569

    申请日:2023-06-23

    Abstract: A transfer system according to the present invention comprises a first travel rail including a first merging section; a second travel rail merging the first travel rail at a merging point and including a second merging section corresponding to the first merging section; a transfer/loading area defined in the second merging section and located upstream of the merging point; and a controller (OCS) for controlling an operation of at least one transfer vehicle moving along the first travel rail and the second travel rail, wherein a second transfer vehicle moves along the second travel rail and enters the transfer/loading area, the second transfer vehicle starts a transfer/loading operation in the transfer/loading area, the first transfer vehicle moves along the first travel rail and enters the first merging section, and the first transfer vehicle passes through the merging point before the second transfer vehicle.

    Apparatus for supplying chemical liquid

    公开(公告)号:US11890864B2

    公开(公告)日:2024-02-06

    申请号:US17366322

    申请日:2021-07-02

    Applicant: SEMES CO., LTD

    CPC classification number: B41J11/0085 B05B7/061 B05B13/02 H01L21/6838

    Abstract: An apparatus for supplying a chemical liquid may include a stage on which a substrate is placed, a chemical liquid discharging member and a direction changing member. The chemical liquid discharging member may supply the chemical liquid onto at least two first regions of the substrate for first pixels along a first direction. Additionally, the chemical liquid discharging member may supply the chemical liquid onto at least two second regions of the substrate for second pixels along a second direction. The direction changing member may change a direction of the substrate from the second direction to the first direction.

    DROPLET ANALYSIS UNIT AND SUBSTRATE TREATMENT APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240034055A1

    公开(公告)日:2024-02-01

    申请号:US18347241

    申请日:2023-07-05

    CPC classification number: B41J2/04535 B41J2/0456 B41J29/17 B41J2202/15

    Abstract: A droplet analysis unit capable of measuring and digitizing the meniscus shape, motion, and position of ink droplets and a substrate treatment apparatus including the droplet analysis unit are provided. The substrate treatment apparatus includes: a process treatment unit supporting a substrate while the substrate is being treated; an inkjet head unit treating the substrate by ejecting a substrate treatment liquid onto the substrate using a plurality of nozzles; a gantry unit moving the inkjet head unit over the substrate; and a droplet analysis unit measuring a meniscus in each of the nozzles that is associated with the substrate treatment liquid, wherein the droplet analysis unit measures and quantifies three-dimensional (3D) information regarding the meniscus.

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