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    Method of forming semiconductor device
    81.
    发明授权
    Method of forming semiconductor device 失效
    半导体器件形成方法

    公开(公告)号：US5926735A

    公开(公告)日：1999-07-20

    申请号：US802685

    申请日：1997-02-19

    Applicant: Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Yuugo Goto ,  Satoshi Teramoto ,  Katunobu Awane ,  Yoshitaka Yamamoto ,  Toshimasa Hamada

    Inventor： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Yuugo Goto ,  Satoshi Teramoto ,  Katunobu Awane ,  Yoshitaka Yamamoto ,  Toshimasa Hamada

    IPC: H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L21/4763

    CPC classification number: H01L29/66757 ,  H01L21/28079 ,  H01L21/76802 ,  H01L27/124

    Abstract: There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.

    Abstract translation: 公开了一种具有薄膜晶体管（TFT）的高度集成电路的制造方法，用作有源矩阵液晶显示器（LCD）面板中的外围驱动电路，每个像素阵列均具有电荷转移控制TFT，能够促进 在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下，形成接触孔是困难的。 该方法包括执行阳极氧化，同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上，从而部分地消除在引线和电极上形成阳极氧化膜。 在后面的制造步骤中，通过使用其上没有形成阳极氧化膜的部分形成每个接触。 这可以允许使用铝作为引线，同时能够容易地制造用于其的触点。

    Method of fabricating semiconductor device and method of processing substrate
    82.
    发明授权
    Method of fabricating semiconductor device and method of processing substrate 失效
    制造半导体器件的方法和处理衬底的方法

    公开(公告)号：US5492843A

    公开(公告)日：1996-02-20

    申请号：US282598

    申请日：1994-07-29

    Applicant: Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

    Inventor： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

    IPC: H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/324

    CPC classification number: H01L27/1214 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1262 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S438/974

    Abstract: Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

    Abstract translation: 制造半导体器件的方法 使用诸如Corning 7059的玻璃基板作为基板。 形成底部薄膜。 然后，将基板在玻璃基板的应变点之上退火。 然后将基材缓慢冷却至应变点以下。 之后，形成硅膜，形成TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 这使得轻松执行掩模对齐。 此外，由于掩模的未对准而导致的缺陷减少，生产率提高。 在另一种方法中，还使用由Corning 7059制成的玻璃基板作为基板。 衬底在应变点之上退火。 然后，将基材快速冷却到应变点以下。 然后，形成底膜，制作TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 因此，在TFT的有源层和底部膜中产生较少的裂纹。 这提高了产量。 在加热基材期间，其保持基本水平，以减少基材的翘曲，变形和波纹。

    Method of transferring a laminate and method of manufacturing a semiconductor device
    83.
    发明授权
    Method of transferring a laminate and method of manufacturing a semiconductor device 有权
    层压体的转印方法及半导体装置的制造方法

    公开(公告)号：US08945331B2

    公开(公告)日：2015-02-03

    申请号：US12502428

    申请日：2009-07-14

    Applicant: Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    Inventor： Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    IPC: B32B38/10 ,  H01L21/762 ,  H01L21/20

    CPC classification number: H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

    Abstract: An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

    Abstract translation: 本发明的目的是提供一种在短时间内将被剥离物转印到转印部件上而不会对层压体内被剥离对象造成损伤的方法。 另外，本发明的另一个目的是提供一种半导体器件的制造方法，其中将制造在衬底上的半导体元件转移到通常为塑料衬底的转印构件上。 该方法的特征在于包括：在基板上形成剥离层和待剥离物体; 通过双面胶带粘合要剥离的物体和支撑体; 通过使用物理方法剥离剥离层的物体，然后将被剥离物接合到转印体上; 并将支撑体和双面胶带从要剥离的物体上剥离。

    Semiconductor device and method of fabricating the same
    84.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US08680593B2

    公开(公告)日：2014-03-25

    申请号：US13359515

    申请日：2012-01-27

    Applicant: Yoshiharu Hirakata ,  Yuugo Goto ,  Yuko Kobayashi ,  Shunpei Yamazaki

    Inventor： Yoshiharu Hirakata ,  Yuugo Goto ,  Yuko Kobayashi ,  Shunpei Yamazaki

    IPC: H01L27/108 ,  H01L29/94

    Abstract: There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.

    SEMICONDUCTOR DEVICE
    87.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120037993A1

    公开(公告)日：2012-02-16

    申请号：US13280716

    申请日：2011-10-25

    Applicant: Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

    Inventor： Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

    IPC: H01L29/78 ,  H01L29/06

    CPC classification number: H01L27/1218

    Abstract: A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

    Abstract translation: 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下，诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜，其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。

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