公开(公告)号：US09773675B2

公开(公告)日：2017-09-26

申请号：US15432368

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/033 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L21/3105 ,  H01L27/108 ,  H01L27/12

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US09754791B2

公开(公告)日：2017-09-05

申请号：US14680879

申请日：2015-04-07

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Yin Fan ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/768 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/455 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/28562 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31155 ,  H01L21/76879

Abstract: Methods for selectively depositing different materials at different locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on. Ion implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

公开(公告)号：US20170182556A1

公开(公告)日：2017-06-29

申请号：US15327281

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Jennifer Y. Sun ,  Thomas B. Brezoczky ,  Christopher A. Rowland ,  Srinivas D. Nemani ,  Swaminathan Srinivasan ,  Simon Yavelberg ,  Ellie Y. Yieh ,  Hou T. Ng

IPC: B22F3/105 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02 ,  B28B17/00 ,  B23K26/70 ,  B23K26/14 ,  B29C67/00 ,  B28B1/00 ,  B33Y10/00 ,  B23K26/342

CPC classification number: B22F3/1055 ,  B22F1/0088 ,  B22F2003/1056 ,  B22F2003/1057 ,  B23K26/1464 ,  B23K26/342 ,  B23K26/702 ,  B28B1/001 ,  B28B17/0081 ,  B29C64/153 ,  B29C64/20 ,  B29C64/386 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02 ,  Y02P10/295

Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.

公开(公告)号：US09620407B2

公开(公告)日：2017-04-11

申请号：US14613545

申请日：2015-02-04

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Erica Chen ,  Jun Xue ,  Ellie Y. Yieh ,  Gary E. Dickerson

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/82 ,  H01L27/092 ,  H01L21/311 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/033 ,  H01L21/8238 ,  H01L21/3115 ,  H01L21/32

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

公开(公告)号：US09406522B2

公开(公告)日：2016-08-02

申请号：US14495794

申请日：2014-09-24

Applicant: Applied Materials, Inc.

Inventor： Hao Chen ,  Chentsau (Chris) Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/3086 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67742

Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.

Abstract translation: 多周期间隔物的第一部分形成在衬底上的图案化特征的侧壁上。 使用第一等离子体工艺在第一部分上沉积间隔层。 使用第二等离子体工艺蚀刻间隔层以在第一部分上形成多循环间隔物的第二部分。 连续重复包括沉积和蚀刻间隔层的循环，直到形成多循环间隔物。

公开(公告)号：US09385219B2

公开(公告)日：2016-07-05

申请号：US14754042

申请日：2015-06-29

Applicant: Applied Materials, Inc.

Inventor： Ellie Y. Yieh ,  Srinivas D. Nemani ,  Ludovic Godet ,  Yin Fan ,  Tristan Ma

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/265 ,  H01L21/223 ,  H01L21/266 ,  C23C16/455

CPC classification number: H01L29/66803 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45536 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/02057 ,  H01L21/0228 ,  H01L21/02296 ,  H01L21/02315 ,  H01L21/02334 ,  H01L21/0262 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/266

Abstract: Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition process for fin field effect transistors (FinFETs) are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes depositing a first material on a substrate having a three-dimensional (3D) structure formed thereon while performing an implantation process to dope a first region of the 3D structure. The first material may be removed and a second material may be deposited on the 3D structure. The second material may selectively grow on a second region of the 3D structure.

Abstract translation: 提供了使用鳍式场效应晶体管（FinFET）的选择性沉积工艺在翅片结构的不同位置形成所需材料的翅片结构的方法。 在一个实施例中，在衬底上形成具有期望材料的结构的方法包括在执行植入工艺以掺杂3D结构的第一区域的同时，在其上形成有三维（3D）结构的衬底上沉积第一材料。 可以去除第一材料并且可以将第二材料沉积在3D结构上。 第二材料可以选择性地在3D结构的第二区域上生长。

公开(公告)号：US20140261168A1

公开(公告)日：2014-09-18

申请号：US14162048

申请日：2014-01-23

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Ellie Y. Yieh ,  Juan Carlos Rocha-Alvarez ,  Russell Edward Perry

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  H01L21/6719

Abstract: Embodiments of the present invention generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool having four to six process chambers connected to a transfer chamber and each process chamber may simultaneously process two or three substrates.

Abstract translation: 本发明的实施例一般涉及用于处理半导体衬底的簇工具。 在一个实施例中，具有连接到传送室和每个处理室的四至六个处理室的簇工具可以同时处理两个或三个基板。